公开(公告)号：US20220059361A1

公开(公告)日：2022-02-24

申请号：US17445625

申请日：2021-08-23

Applicant: Tokyo Electron Limited

Inventor： Michiko NAKAYA ,  Taku GOHIRA ,  Hyoseok SONG ,  Masahiro TADOKORO ,  Kentaro NUMATA ,  Keita YAEGASHI

IPC: H01L21/311 ,  H01J37/32

Abstract: An etching method for providing an etch profile is provided. The etching method includes preparing a substrate in which a laminate film is formed, the laminate film including silicon oxide films and silicon films stacked in alternation. The etching method includes cooling a surface temperature of the substrate to −40° C. or less. The etching method includes forming a plasma from gas containing hydrogen and fluorine, based on radio frequency power for plasma formation. The etching method includes etching the laminate film with the formed plasma.

公开(公告)号：US20230298867A1

公开(公告)日：2023-09-21

申请号：US18122469

申请日：2023-03-16

Applicant: Tokyo Electron Limited

Inventor： Keita YAEGASHI ,  Joji TAKAYOSHI ,  Takayuki SUZUKI ,  Ryohei TAKEDA ,  Soya TODO ,  Yusuke SAITOH ,  Takaharu SAINO

IPC: H01J37/32 ,  G05B19/4099

CPC classification number: H01J37/32669 ,  G05B19/4099 ,  H01J2237/24564 ,  H01J2237/3343 ,  G05B2219/45031

Abstract: A prediction method includes a calculation process and a prediction process. The calculation process calculates a correlation between a spatial distribution value of a magnetic field in a chamber when a plasma etching process is performed on a substrate disposed in the chamber, and a process result of the plasma etching process on the substrate. The prediction process predicts the process result of the plasma etching process on the substrate from the spatial distribution value of the magnetic field in the chamber based on the calculated correlation.

公开(公告)号：US20250157798A1

公开(公告)日：2025-05-15

申请号：US19021284

申请日：2025-01-15

Applicant: Tokyo Electron Limited

Inventor： Ryohei TAKEDA ,  Wataru TAKAYAMA ,  Muneyuki OMI ,  Keita YAEGASHI ,  Sho TOMINAGA ,  Joji TAKAYOSHI

IPC: H01J37/32

Abstract: A control program for a plasma processing device that executes plasma processing by supplying source power to a plasma generation source and supplying bias power to a stage on which a substrate to be processed is placed, and the control program causes a computer to observe a peak-to-peak voltage between the source power and the bias power, and adjust the source power supplied to the plasma generation source, the bias power supplied to the stage, a direct-current voltage applied to an outer peripheral member disposed around the stage, and an impedance of a filter circuit connected between a source of the direct-current voltage and the outer peripheral member, the source power, the bias power, the direct-current voltage and the impedance being adjustment parameters for controlling a fluctuation width of the observed peak-to-peak voltage.