公开(公告)号：US20230135618A1

公开(公告)日：2023-05-04

申请号：US17912201

申请日：2021-03-12

Applicant: Tokyo Electron Limited

Inventor： Hiroshi HIROSE ,  Masaomi KOBE ,  Koichi MIYASHITA ,  Takafumi NOGAMI ,  Kenichi KOTE ,  Kouji IIHOSHI

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/511 ,  H01J37/32

Abstract: A substrate processing method includes: a step of preparing a substrate in a chamber of a substrate processing apparatus; a step of correcting a set power value based on a correction value Y from Equation (1), coefficients A, B, C, and D, and a variable X indicating a processed amount of the substrates having been subjected to continuous film formation processes, referring to a storage in which the coefficients A, B, C, and D of the Equation (1) used to calculate the correction value Y for the set power value are stored; and a step of processing the prepared substrate by applying power with the corrected power value into the chamber, the Equation (1) is expressed as Y=Aexp(BX)+CX+D, where at least one of the coefficients A, C, and D is not zero, and when the coefficient A is not zero, the coefficient B is also not zero.