公开(公告)号：US20230131213A1

公开(公告)日：2023-04-27

申请号：US17973934

申请日：2022-10-26

Applicant: Tokyo Electron Limited

Inventor： Isao GUNJI ,  Masahiro OKA ,  Minoru HONDA ,  Takashi KOBAYASHI

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/3213 ,  H01J37/32 ,  C23C16/50 ,  C23C16/56 ,  C23C16/34 ,  C23C16/36 ,  C23C16/30 ,  C23C16/24 ,  C23C16/52

Abstract: A film forming method includes: preparing a substrate having a recess within a processing container; forming a silicon-containing film on the substrate by activating a silicon-containing gas with plasma and supplying the activated silicon-containing gas to the substrate; partially modifying the silicon-containing film after the silicon-containing film closes an opening of the recess; and selectively etching the modified silicon-containing film.