公开(公告)号：US20230131213A1

公开(公告)日：2023-04-27

申请号：US17973934

申请日：2022-10-26

Applicant: Tokyo Electron Limited

Inventor： Isao GUNJI ,  Masahiro OKA ,  Minoru HONDA ,  Takashi KOBAYASHI

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/3213 ,  H01J37/32 ,  C23C16/50 ,  C23C16/56 ,  C23C16/34 ,  C23C16/36 ,  C23C16/30 ,  C23C16/24 ,  C23C16/52

Abstract: A film forming method includes: preparing a substrate having a recess within a processing container; forming a silicon-containing film on the substrate by activating a silicon-containing gas with plasma and supplying the activated silicon-containing gas to the substrate; partially modifying the silicon-containing film after the silicon-containing film closes an opening of the recess; and selectively etching the modified silicon-containing film.

公开(公告)号：US20180350598A1

公开(公告)日：2018-12-06

申请号：US15997431

申请日：2018-06-04

Applicant: Tokyo Electron Limited

Inventor： Yoshimasa WATANABE ,  Masahiro OKA ,  Hirokazu UEDA

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/3205 ,  C23C16/28 ,  C23C16/50 ,  C23C16/56

Abstract: In a method for removing a boron film formed on a substrate by CVD, heat treatment is performed on a part or all boron film in an oxidizing atmosphere and oxidizing a heat-treated portion. Then, an oxidized portion of the boron film is removed by water or aqueous solution containing electrolyte ions.

公开(公告)号：US20210090888A1

公开(公告)日：2021-03-25

申请号：US17041767

申请日：2019-02-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Jinwang LI ,  Masahiro OKA ,  Yoshimasa WATANABE ,  Yuuki YAMAMOTO ,  Hiroyuki IKUTA

IPC: H01L21/033 ,  H01L21/02 ,  C23C16/02 ,  C23C16/50 ,  C23C16/455 ,  C23C16/28

Abstract: A method of forming a boron-based film mainly containing boron on a substrate includes forming, on the substrate, an adhesion layer containing an element contained in a surface of the substrate and nitrogen, and subsequently, forming the boron-based film on the adhesion layer.

公开(公告)号：US20190244838A1

公开(公告)日：2019-08-08

申请号：US16263236

申请日：2019-01-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshimasa WATANABE ,  Masahiro OKA ,  Hirokazu UEDA ,  Yuuki YAMAMOTO

IPC: H01L21/67 ,  H01L21/02 ,  C23C16/455 ,  C23C16/02 ,  C23C16/40 ,  C23C16/511

CPC classification number: H01L21/67063 ,  C23C16/0236 ,  C23C16/401 ,  C23C16/455 ,  C23C16/511 ,  H01L21/02129 ,  H01L21/02274

Abstract: A method of forming a boron-based film includes forming the boron-based film mainly containing boron on a substrate by plasma CVD using plasma of a processing gas including a boron-containing gas; and controlling film stress of the formed boron-based film by adjusting a process parameter.

公开(公告)号：US20160351398A1

公开(公告)日：2016-12-01

申请号：US15165085

申请日：2016-05-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Hidenori MIYOSHI ,  Masahiro OKA ,  Genji NAKAMURA ,  Yuki KOBAYASHI ,  Yasuhiro SUGIMOTO

IPC: H01L21/223 ,  H01L21/324 ,  H01J37/32 ,  H01L21/265

CPC classification number: H01L21/2236 ,  H01J37/32192 ,  H01J37/32293 ,  H01J37/32724 ,  H01L21/324 ,  H01L29/16

Abstract: Disclosed is a method of manufacturing a semiconductor element by implanting a dopant to a substrate to be processed. High frequency plasma is generated within a processing container by using microwaves. By using the generated high frequency plasma, a plasma doping treatment is performed on a germanium-containing to-be-processed substrate which is held on a holding table within the processing container.

Abstract translation: 公开了一种通过将掺杂剂注入到待处理的基板上来制造半导体元件的方法。 通过使用微波在处理容器内产生高频等离子体。 通过使用所生成的高频等离子体，对保持在处理容器内的保持台上的含锗被处理基板进行等离子体掺杂处理。

公开(公告)号：US20180174838A1

公开(公告)日：2018-06-21

申请号：US15833685

申请日：2017-12-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Hiraku ISHIKAWA ,  Yoshimasa WATANABE ,  Syuhei YONEZAWA

IPC: H01L21/033 ,  H01L21/311 ,  H01J37/32 ,  C23C16/511 ,  C23C16/38 ,  C23C16/46 ,  C23C16/44

CPC classification number: H01L21/0332 ,  C23C16/38 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/5096 ,  C23C16/511 ,  H01J37/32201 ,  H01J37/32229 ,  H01J37/32449 ,  H01J2237/182 ,  H01J2237/3321 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/11551 ,  H01L27/11578

Abstract: There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).

公开(公告)号：US20180012763A1

公开(公告)日：2018-01-11

申请号：US15539224

申请日：2015-12-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Yuuki KOBAYASHI ,  Yasuhiro SUGIMOTO

IPC: H01L21/223 ,  H01J37/32 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/2236 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32403 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/335 ,  H01J2237/3365 ,  H01L21/02057 ,  H01L29/66803

Abstract: Provided is a doping method for doping by injecting a dopant into a processing target substrate. According to this doping method, a value of bias electric power supplied during a plasma doping processing is set to a predetermined value on premise of a washing processing to be performed after a plasma doping, and plasma is generated within a processing vessel using microwaves so as to perform the plasma doping processing on the processing target substrate hold on a holding pedestal in the processing vessel.

公开(公告)号：US20160189963A1

公开(公告)日：2016-06-30

申请号：US14976456

申请日：2015-12-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Yuuki KOBAYASHI ,  Yasuhiro SUGIMOTO

IPC: H01L21/223 ,  H01L21/225

CPC classification number: H01L21/2236 ,  H01L21/2256 ,  H01L29/66803

Abstract: Disclosed is a method of performing doping by implanting a dopant to a processing target substrate. First, in an oxide film forming step, an oxide film is formed on the processing target substrate prior to performing a doping treatment. In addition, after the oxide film is formed on the processing target substrate, a plasma doping treatment is performed from a top of the oxide film after the oxide film forming step.

Abstract translation: 公开了通过将掺杂剂注入到处理目标衬底来进行掺杂的方法。 首先，在氧化膜形成工序中，在进行掺杂处理之前，在处理对象基板上形成氧化膜。 另外，在处理对象基板上形成氧化膜之后，在氧化膜形成工序之后，从氧化膜的顶部进行等离子体掺杂处理。

公开(公告)号：US20150187582A1

公开(公告)日：2015-07-02

申请号：US14582417

申请日：2014-12-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Yasuhiro SUGIMOTO ,  Masahiro HORIGOME ,  Yuuki KOBAYASHI

IPC: H01L21/223 ,  H01J37/317 ,  H01L21/324

CPC classification number: H01L21/2236 ,  H01J37/32192 ,  H01J37/32412 ,  H01L29/66803

Abstract: Disclosed is a plasma doping apparatus and a plasma doping method for performing a doping on a processing target substrate by implanting dopant ions into the processing target substrate. The plasma doping method includes a plasma doping processing performed on the processing target substrate held on a holding unit within a processing container by generating plasma using a microwave. The plasma doping method also includes an annealing processing which is performed on the processing target substrate which has been subjected to the plasma doping processing.

Abstract translation: 公开了一种等离子体掺杂装置和等离子体掺杂方法，用于通过将掺杂剂离子注入到处理目标衬底中来对处理目标衬底进行掺杂。 等离子体掺杂方法包括通过使用微波产生等离子体在保持在处理容器内的保持单元上的处理目标衬底上进行等离子体掺杂处理。 等离子体掺杂方法还包括对经过等离子体掺杂处理的处理对象基板进行的退火处理。

公开(公告)号：US20190301019A1

公开(公告)日：2019-10-03

申请号：US16363531

申请日：2019-03-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshimasa WATANABE ,  Masahiro OKA ,  Jinwang LI ,  Yuuki YAMAMOTO ,  Hirokazu UEDA

IPC: C23C16/505 ,  C23C16/52 ,  C23C16/22

Abstract: There is provided a boron-based film forming method for forming a boron-based film mainly containing boron on a substrate. The method includes steps of loading a substrate into a chamber of a film forming apparatus for forming the boron-based film by plasma CVD using capacitively-coupled plasma, supplying a processing gas containing a boron-containing gas into the chamber, applying a high frequency power for generating the capacitively-coupled plasma and forming the boron-based film on the substrate by generating a plasma of the processing gas by the high frequency power. A film stress of the boron-based film is adjusted by the high frequency power in the applying step.