公开(公告)号：US20210296102A1

公开(公告)日：2021-09-23

申请号：US17342668

申请日：2021-06-09

Applicant: Tokyo Electron Limited

Inventor： Kazuya NAGASEKI ,  Kazuki MOYAMA ,  Toshiya MATSUDA ,  Naokazu FURUYA ,  Tatsuro OHSHITA

IPC: H01J37/32 ,  H01L21/673 ,  C23C16/44 ,  C23C16/52 ,  C23C16/455 ,  H01L21/67

Abstract: An exhaust device including an exhaust mechanism and an exhaust unit is provided. The exhaust mechanism includes a first blade unit and a second blade unit provided in an exhaust space of a processing vessel including a processing space of a vacuum atmosphere for applying a process to a workpiece. The first blade unit and the second blade unit are arranged coaxially with a periphery of the workpiece, and at least one of the first blade unit and the second blade unit is rotatable. The exhaust unit is provided at a downstream side of the exhaust mechanism and communicates with the exhaust space. The exhaust unit is configured to exhaust gas in the processing vessel.

公开(公告)号：US20190172689A1

公开(公告)日：2019-06-06

申请号：US16205558

申请日：2018-11-30

Applicant: Tokyo Electron Limited

Inventor： Kazuya NAGASEKI ,  Kazuki MOYAMA ,  Toshiya MATSUDA ,  Naokazu FURUYA ,  Tatsuro OHSHITA

IPC: H01J37/32 ,  H01L21/673 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52

Abstract: An exhaust device including an exhaust mechanism and an exhaust unit is provided. The exhaust mechanism includes a first blade unit and a second blade unit provided in an exhaust space of a processing vessel including a processing space of a vacuum atmosphere for applying a process to a workpiece. The first blade unit and the second blade unit are arranged coaxially with a periphery of the workpiece, and at least one of the first blade unit and the second blade unit is rotatable. The exhaust unit is provided at a downstream side of the exhaust mechanism and communicates with the exhaust space. The exhaust unit is configured to exhaust gas in the processing vessel.

公开(公告)号：US20210313151A1

公开(公告)日：2021-10-07

申请号：US17220982

申请日：2021-04-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi TOHARA ,  Naokazu FURUYA ,  Yosuke TAMURO ,  Yuzuru SAKAI

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a chamber accommodating a plurality of substrates; a plurality of substrate supports provided inside the chamber and configured to support a substrate; a plurality of radio-frequency power sources provided corresponding to the plurality of substrate supports, and configured to supply radio-frequency power to the plurality of substrate supports, respectively; and a plurality of shields configured to compart the inside of the chamber and provided corresponding to the plurality of substrate supports to define a processing space where plasma is generated. A radio-frequency current path is formed between the plurality of shields so as not to interfere with one another.