公开(公告)号：US20250029847A1

公开(公告)日：2025-01-23

申请号：US18355038

申请日：2023-07-19

Applicant: Tokyo Electron Limited

Inventor： Nathan IP

IPC: H01L21/67 ,  G05B19/4099

Abstract: Aspects of the present disclosure provide a wafer bonding system, which, for example, can include a wafer bonding tool configured to bond a first wafer and a second wafer to each other in accordance with a first wafer bonding recipe to produce a first post-bond wafer, a metrology tool integrated with the wafer bonding tool, and a tool controller coupled to the wafer bonding tool and the metrology tool. The metrology tool can be configured to measure a physical parameter of the first wafer. The physical parameter of the first wafer representing information relates to topographical features of the first wafer. The tool controller can have a model of a wafer bonding process. The model can include an input indicative of the physical parameter of the first wafer and configured to generate the first wafer bonding recipe based, at least in part, on the physical parameter of the first wafer.

公开(公告)号：US20240250059A1

公开(公告)日：2024-07-25

申请号：US18530067

申请日：2023-12-05

Applicant: Tokyo Electron Limited

Inventor： Christopher NETZBAND ,  Nathan IP

IPC: H01L23/00

CPC classification number: H01L24/74 ,  H01L24/80 ,  H01L2224/74 ,  H01L2224/80894 ,  H01L2924/40

Abstract: An apparatus for handling a semiconductor wafer includes an upper wafer holder that has a front surface, and a compliant ring that is mounted around the upper wafer holder and has a front surface. The front surface of the compliant ring is flush with the front surface of the upper wafer holder and extends from the front surface of the upper wafer holder in a radial direction without extending beyond the front surface of the wafer holder in an axial direction. A method includes providing a first wafer with a bonding surface and back surface, the back surface of the wafer in contact with the front surfaces of the wafer holder and the compliant ring. The first wafer contacts a second wafer so a bond forms between the wafers in a radial direction, the compliant ring flexibly restricting the movement of the first wafer relative to the second wafer.

公开(公告)号：US20220262631A1

公开(公告)日：2022-08-18

申请号：US17176446

申请日：2021-02-16

Applicant: Tokyo Electron Limited

Inventor： Satoshi ITOH ,  Norifumi KOHAMA ,  Soudai EMORI ,  Nathan IP

IPC: H01L21/02 ,  H01L21/66 ,  H01J37/32 ,  C23C16/50 ,  C23C16/34 ,  C23C16/52

Abstract: A plasma processing method that is executed by a plasma processing apparatus including a processing container containing a target substrate, a plurality of plasma sources, and a gas supply apparatus for supplying gas includes: supplying the gas from the gas supply apparatus into the processing container; individually controlling intensity of power introduced from each of the plurality of plasma sources into the processing container; and generating plasma of the gas by the intensity of the power introduced from each of the plurality of plasma sources and depositing a desired film on a second surface of the target substrate that is an opposite surface of a first surface of the target substrate so as to apply desired film stress to a film on the first surface.