公开(公告)号：US20240177064A1

公开(公告)日：2024-05-30

申请号：US18521112

申请日：2023-11-28

Applicant: Tokyo Electron Limited

Inventor： Satoshi ITOH ,  Hitoshi YONEMICHI

IPC: G06N20/00 ,  G06N5/04

CPC classification number: G06N20/00 ,  G06N5/04

Abstract: An information processing apparatus includes: a learning trainer configured to train a machine learning model to train a relationship between a process condition and a processing result of a substrate processing apparatus that has executed a processing based on the process condition; an inferrer configured to infer a plurality of processing results depending on a plurality of process conditions using the trained machine learning model; a graph creator configured to plot the plurality of processing results inferred with the machine learning model on a graph with an achievement level for a plurality of target values of the plurality of processing results as a plurality of axes; and an information display configured to display, on the graph, information used by an operator to select an optimal solution for the process condition, based on the plot of the plurality of inferred processing results.

公开(公告)号：US20230085325A1

公开(公告)日：2023-03-16

申请号：US17903444

申请日：2022-09-06

Applicant: Tokyo Electron Limited

Inventor： Hirokazu KYOKANE ,  Hidefumi MATSUI ,  Toshiyuki FUKUMOTO ,  Satoshi ITOH ,  Masashi IMANAKA ,  Toyohisa TSURUDA ,  Masashi ENOMOTO ,  Masahiro YANAGISAWA

IPC: G01B11/06 ,  G06T7/60

Abstract: A substrate processing apparatus includes: an imaging portion configured to acquire a surface image of a film formed on a surface of a substrate; an optical property estimation portion configured to estimate an optical property of the film based on process information acquired during formation of the film; and a film thickness estimation portion configured to estimate a film thickness of the film based on the surface image and an estimation result of the optical property.

公开(公告)号：US20230343561A1

公开(公告)日：2023-10-26

申请号：US17766379

申请日：2020-09-25

Applicant: Tokyo Electron Limited

Inventor： Satoshi ITOH ,  Masashi IMANAKA ,  Eiki KAMATA ,  Taro IKEDA ,  Shigenori OZAKI ,  Soudai EMORI

IPC: H01J37/32

CPC classification number: H01J37/32458 ,  H01J37/32238 ,  H01J2237/327

Abstract: There is provided a plasma processing apparatus that converts a gas supplied into a processing container into a plasma to process a substrate, the plasma processing apparatus including: a microwave introduction window disposed in each of a plurality of openings formed in a ceiling wall of the processing container, the microwave introduction window being configured to supply power of microwaves into the processing container; and a plurality of grooves formed on the ceiling wall to surround the openings respectively, wherein widths between the grooves and the openings are not uniform with respect to circumferential directions of the openings.

公开(公告)号：US20220262631A1

公开(公告)日：2022-08-18

申请号：US17176446

申请日：2021-02-16

Applicant: Tokyo Electron Limited

Inventor： Satoshi ITOH ,  Norifumi KOHAMA ,  Soudai EMORI ,  Nathan IP

IPC: H01L21/02 ,  H01L21/66 ,  H01J37/32 ,  C23C16/50 ,  C23C16/34 ,  C23C16/52

Abstract: A plasma processing method that is executed by a plasma processing apparatus including a processing container containing a target substrate, a plurality of plasma sources, and a gas supply apparatus for supplying gas includes: supplying the gas from the gas supply apparatus into the processing container; individually controlling intensity of power introduced from each of the plurality of plasma sources into the processing container; and generating plasma of the gas by the intensity of the power introduced from each of the plurality of plasma sources and depositing a desired film on a second surface of the target substrate that is an opposite surface of a first surface of the target substrate so as to apply desired film stress to a film on the first surface.

公开(公告)号：US20220037124A1

公开(公告)日：2022-02-03

申请号：US17388613

申请日：2021-07-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi ITOH ,  Hiroyuki IKUTA ,  Yoshiyuki KONDO ,  Hideki YUASA ,  Soudai EMORI

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/511 ,  C23C16/509

Abstract: A plasma processing apparatus for generating plasma from a processing gas using microwaves and performing plasma processing on a substrate is provided. The apparatus includes a processing chamber having a substrate support on which the substrate is placed; a plurality of microwave radiation units arranged at a central portion and an outer peripheral portion of a ceiling wall of the processing chamber and configured to radiate microwaves; and a controller configured to complete microwave radiation from the microwave radiation unit in the central portion upon completion of plasma processing of the substrate and then complete microwave radiation from the microwave radiation units in the outer peripheral portion.

公开(公告)号：US20210249240A1

公开(公告)日：2021-08-12

申请号：US16972784

申请日：2019-05-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi ITOH ,  Takafumi NOGAMI ,  Eita YOKOKURA ,  Reisa MATSUMOTO

IPC: H01J37/32 ,  B08B7/00 ,  C23C16/44 ,  C23C16/511

Abstract: Provided is a method for cleaning a microwave plasma processing apparatus which has a processing container and a microwave radiation part, and which has a window part provided at a position where the microwave radiation part is disposed in the processing container. The method includes a cleaning step of adjusting a pressure to a pressure corresponding to a size of a cleaning target part, among parts within the processing container including a wall surface of the processing container, the microwave radiation part, and the window part, while supplying a cleaning gas, and performing a cleaning process using plasma of the cleaning gas.