公开(公告)号：US20250022756A1

公开(公告)日：2025-01-16

申请号：US18899835

申请日：2024-09-27

Applicant: Tokyo Electron Limited

Inventor： H. Jim FULFORD ,  Mark I. GARDNER ,  Partha MUKHOPADHDYAY

IPC: H01L21/8238 ,  H01L21/822 ,  H01L27/092 ,  H01L29/78

Abstract: A method of microfabrication includes epitaxially growing a first vertical channel structure of silicon-containing material on a first sacrificial layer of silicon containing material, the first sacrificial layer having etch selectivity with respect to the vertical channel structure. A core opening is directionally etched through the vertical channel structure to expose the first sacrificial layer, and the first sacrificial layer is isotropically etched through the core opening to form a first isolation opening for isolating the first vertical channel structure.