FULLY SELF-ALIGNED VIA WITH GRAPHENE CAP

    公开(公告)号:US20250054809A1

    公开(公告)日:2025-02-13

    申请号:US18366492

    申请日:2023-08-07

    Abstract: A method of processing a substrate that includes: forming a pattern of an electrically conductive layer over the substrate, the electrically conductive layer and a first dielectric layer being exposed at a surface of the substrate; selectively depositing a graphene layer over the electrically conductive layer relative to the first dielectric layer; selectively depositing a second dielectric layer over the first dielectric layer relative to the graphene layer; and depositing a third dielectric layer over the substrate, the third dielectric layer covering the second dielectric layer and the graphene layer.

Patent Agency Ranking