公开(公告)号：US20250054809A1

公开(公告)日：2025-02-13

申请号：US18366492

申请日：2023-08-07

Applicant: Tokyo Electron Limited

Inventor： Kandabara Tapily ,  Subhadeep Kal ,  Peng Wang ,  Peter Biolsi

IPC: H01L21/768 ,  H01L21/311

Abstract: A method of processing a substrate that includes: forming a pattern of an electrically conductive layer over the substrate, the electrically conductive layer and a first dielectric layer being exposed at a surface of the substrate; selectively depositing a graphene layer over the electrically conductive layer relative to the first dielectric layer; selectively depositing a second dielectric layer over the first dielectric layer relative to the graphene layer; and depositing a third dielectric layer over the substrate, the third dielectric layer covering the second dielectric layer and the graphene layer.

公开(公告)号：US20230317462A1

公开(公告)日：2023-10-05

申请号：US17690715

申请日：2022-03-09

Applicant: Tokyo Electron Limited

Inventor： Yun Han ,  Alok Ranjan ,  Tomoyuki Oishi ,  Shuhei Ogawa ,  Ken Kobayashi ,  Peter Biolsi

IPC: H01L21/3065 ,  H01L21/8234

CPC classification number: H01L21/3065 ,  H01L21/823431

Abstract: A method of processing a substrate that includes: performing a cyclic plasma etch process including a plurality of cycles, each of the plurality of cycles including: etching a patterning layer including a polycrystalline semiconductor material to form or extend a recess by exposing the substrate to a first plasma, the substrate including an oxide layer, the patterning layer formed over the oxide layer, exposing the substrate to a second plasma, the second plasma including dihydrogen, and extending the recess by exposing the substrate to a third plasma, the second plasma being different from the first plasma and the third plasma.

公开(公告)号：US12300500B2

公开(公告)日：2025-05-13

申请号：US17690715

申请日：2022-03-09

Applicant: Tokyo Electron Limited

Inventor： Yun Han ,  Alok Ranjan ,  Tomoyuki Oishi ,  Shuhei Ogawa ,  Ken Kobayashi ,  Peter Biolsi

IPC: H01L21/3065 ,  H10D84/01 ,  H10D84/03

Abstract: A method of processing a substrate that includes: performing a cyclic plasma etch process including a plurality of cycles, each of the plurality of cycles including: etching a patterning layer including a polycrystalline semiconductor material to form or extend a recess by exposing the substrate to a first plasma, the substrate including an oxide layer, the patterning layer formed over the oxide layer, exposing the substrate to a second plasma, the second plasma including dihydrogen, and extending the recess by exposing the substrate to a third plasma, the second plasma being different from the first plasma and the third plasma.

公开(公告)号：US12266533B2

公开(公告)日：2025-04-01

申请号：US17721620

申请日：2022-04-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yun Han ,  Andrew Metz ,  Peter Biolsi

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H01L29/66

Abstract: A method which includes providing a substrate having a source/drain region and an etch stop layer on the source/drain region. A plasma etching process is performed using an etching gas that removes the etch stop layer and forms a sacrificial oxide capping layer on the source/drain region. The sacrificial oxide capping layer is then from the source/drain region.