公开(公告)号：US12191166B2

公开(公告)日：2025-01-07

申请号：US17425046

申请日：2020-01-15

Applicant: Tokyo Electron Limited

Inventor： Takashi Uno ,  Satoshi Okawa

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate processing apparatus configured to process a combined substrate in which a first substrate having thereon a device layer and a second substrate are bonded to each other includes a holder configured to hold a rear surface of the second substrate; a processing unit configured to process the first substrate held by the holder; a first processing liquid supply configured to etch a front surface of the first substrate by supplying a first processing liquid to the front surface of the first substrate opposite to a surface thereof where the device layer is provided; and a second processing liquid supply configured to remove a metal contaminant on the rear surface of the second substrate by supplying a second processing liquid to the rear surface of the second substrate.