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公开(公告)号：US12255063B2
公开(公告)日：2025-03-18
申请号：US17259244
申请日：2019-07-18
Applicant: Tokyo Electron Limited
Inventor： Hayato Tanoue , Takashi Uno , Satoshi Ookawa , Suguru Enokida
IPC: H01L21/762 , H01L21/02 , H01L21/67 , H01L21/687
Abstract: A substrate processing system configured to process a substrate includes a first modifying apparatus configured to form, in a combined substrate in which a front surface of a first substrate and a front surface of a second substrate are bonded to each other, an internal modification layer elongated within the first substrate in a plane direction from a center of the first substrate toward at least an edge portion of the first substrate as a removing target; a second modifying apparatus configured to form, within the first substrate, an edge modification layer elongated in a thickness direction of the first substrate along a boundary between the edge portion and a central portion of the first substrate; and a separating apparatus configured to separate a portion of the first substrate at a rear surface side, starting from the internal modification layer.
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公开(公告)号：US20150146498A1
公开(公告)日：2015-05-28
申请号：US14543951
申请日：2014-11-18
Applicant: Tokyo Electron Limited
Inventor： Yasuo Kiyohara , Ikuo Sunaka , Koji Tanaka , Takami Satoh , Kazuyoshi Mizumoto , Takashi Uno , Hirotaka Maruyama , Hidetomo Uemukai , Tomiyasu Maezono
CPC classification number: G05D11/132 , B01F3/088 , B01F15/0479
Abstract: A substrate processing apparatus includes a mixing tank, a first opening/closing valve, a second opening/closing valve, a first flow rate measuring unit, a second flow rate measuring unit, a control unit, and a substrate processing unit. A first liquid and a second liquid are mixed such that the second liquid is mixed in an amount more than that of the first liquid. The first and second opening/closing valves open/close a first flow path and a second flow path, respectively. The first and second flow rate measuring units measure flow rates of the first and second liquids flowing through the first and second flow paths, respectively. The control unit controls opening/closing of the first opening/closing valve and the second opening/closing valve. The substrate processing unit processes a substrate by supplying a mixed liquid of the first and second liquids to the substrate.
Abstract translation: 基板处理装置包括混合槽，第一开闭阀，第二开闭阀，第一流量测量单元，第二流量测量单元，控制单元和基板处理单元。 混合第一液体和第二液体，使得第二液体的混合量大于第一液体的量。 第一和第二打开/关闭阀分别打开/关闭第一流动路径和第二流动路径。 第一和第二流量测量单元分别测量流过第一和第二流路的第一和第二液体的流量。 控制单元控制第一打开/关闭阀和第二打开/关闭阀的打开/关闭。 基板处理单元通过将第一和第二液体的混合液体供给到基板来处理基板。
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公开(公告)号：US12191166B2
公开(公告)日：2025-01-07
申请号：US17425046
申请日：2020-01-15
Applicant: Tokyo Electron Limited
Inventor： Takashi Uno , Satoshi Okawa
Abstract: A substrate processing apparatus configured to process a combined substrate in which a first substrate having thereon a device layer and a second substrate are bonded to each other includes a holder configured to hold a rear surface of the second substrate; a processing unit configured to process the first substrate held by the holder; a first processing liquid supply configured to etch a front surface of the first substrate by supplying a first processing liquid to the front surface of the first substrate opposite to a surface thereof where the device layer is provided; and a second processing liquid supply configured to remove a metal contaminant on the rear surface of the second substrate by supplying a second processing liquid to the rear surface of the second substrate.
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Patent Agency Ranking
公开(公告)号：US11742232B2
公开(公告)日：2023-08-29
申请号：US17267503
申请日：2019-07-26
Applicant: Tokyo Electron Limited
Inventor： Yoshinori Ikeda , Shota Umezaki , Shigeru Moriyama , Ryo Yamamoto , Takashi Uno
IPC: H01L21/673 , B08B3/10 , H01L21/02 , H01L21/67
CPC classification number: H01L21/67393 , B08B3/10 , H01L21/02057 , H01L21/67028
Abstract: A substrate processing method according to an embodiment of the present disclosure includes a step of holding a substrate by a substrate holding unit (31) which is rotatable, a step of arranging a top plate portion (41) above the substrate, a step of supplying a processing liquid to the substrate, and a step of supplying a rinsing liquid (Lr) between the substrate and the top plate portion (41) to wash the substrate and the top plate portion (41) with the rinsing liquid (Lr).
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公开(公告)号：US10037901B2
公开(公告)日：2018-07-31
申请号：US14713275
申请日：2015-05-15
Applicant: TOKYO ELECTRON LIMITED
Inventor： Kazuya Koyama , Hiromi Kiyose , Katsufumi Matsuki , Shuhei Takahashi , Hideki Nishimura , Takashi Uno , Hirotaka Maruyama
CPC classification number: H01L21/67017 , B08B9/032 , H01L21/67023
Abstract: A substrate liquid treatment apparatus includes: at least one processing unit that processes a substrate with a treatment liquid; a storage tank that stores the treatment liquid; a circulation line through which the treatment liquid discharged from the storage tank into the circulation line is returned to the storage tank; a branch supply line that is branched from the circulation line to supply the treatment liquid to the processing unit; a recovery line that returns to the storage tank the treatment liquid having been supplied to the substrate in the processing unit; a distribution line connecting the circulation line and the recovery line; and a shutoff valve, provided on the distribution line, that is opened when cleaning of the recovery line is performed.
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公开(公告)号：US20140373877A1
公开(公告)日：2014-12-25
申请号：US14297723
申请日：2014-06-06
Applicant: Tokyo Electron Limited
Inventor： Shigehisa Inoue , Daisuke Nakayama , Katsufumi Matsuki , Takuro Masuzumi , Yuki Yoshida , Meitoku Aibara , Hiromi Kiyose , Takashi Uno , Hirotaka Maruyama , Kazuya Koyama , Takashi Nakazawa
CPC classification number: B08B3/02 , H01L21/67051
Abstract: Disclosed are a liquid processing apparatus and a liquid processing method in which a substrate is processed by a processing liquid in the form of liquid droplets. The liquid processing apparatus includes: a first processing liquid ejecting unit configured to eject a first processing liquid in a form of liquid droplets which contains pure water toward the surface of the substrate; and a second processing liquid ejecting unit configured to eject a second processing liquid as a continuous liquid stream toward the surface of the substrate processed by the first processing liquid in the form of the liquid droplets. The second processing liquid inverts a zeta potential on the surface of the substrate into a negative zeta potential.
Abstract translation: 公开了一种液体处理装置和液体处理方法，其中基板由液滴形式的处理液体处理。 液体处理装置包括：第一处理液体喷射单元，被配置为将含有纯水的液滴形式的第一处理液喷射到基板的表面; 以及第二处理液体喷射单元，被配置为以液滴的形式将作为连续液体流的第二处理液体朝向由第一处理液体处理的基板的表面喷射。 第二处理液将基板表面上的ζ电位反转为负ζ电位。
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公开(公告)号：US20140283887A1
公开(公告)日：2014-09-25
申请号：US14293324
申请日：2014-06-02
Applicant: Tokyo Electron Limited
Inventor： Hiroshi Tanaka , Hironobu Hyakutake , Takashi Uno
IPC: H01L21/67
CPC classification number: H01L21/67057 , H01L21/67028
Abstract: There is provided a substrate processing apparatus including: a cleaning tank configured to clean a target substrate; a drying chamber configured to communicate with an upper area of the cleaning tank and dry the target substrate picked up from the cleaning tank; a first drying gas supply unit configured to supply a first drying gas containing vapor of a solvent for removing a liquid; a second drying gas supply unit configured to supply a second drying gas not containing the vapor of the solvent for removing the liquid; a substrate holder configured to pick up the target substrate from the cleaning tank and transfer the target substrate to the drying chamber; and a controller configured to output a control signal to alternately supply the first drying gas and the second drying gas.
Abstract translation: 提供了一种基板处理装置，包括：清洗槽，其构造成清洁目标基板; 干燥室，其构造成与清洗槽的上部区域连通并干燥从清洗槽取出的目标基板; 第一干燥气体供给单元，其构造成供给包含用于除去液体的溶剂的蒸气的第一干燥气体; 第二干燥气体供给单元，其构造为供给不含溶剂蒸气的第二干燥气体，以除去液体; 衬底保持器，其构造成从所述清洁槽拾取所述目标衬底并将所述目标衬底转移到所述干燥室; 以及控制器，被配置为输出控制信号以交替地供应第一干燥气体和第二干燥气体。
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公开(公告)号：US10067514B2
公开(公告)日：2018-09-04
申请号：US14543951
申请日：2014-11-18
Applicant: Tokyo Electron Limited
Inventor： Yasuo Kiyohara , Ikuo Sunaka , Koji Tanaka , Takami Satoh , Kazuyoshi Mizumoto , Takashi Uno , Hirotaka Maruyama , Hidetomo Uemukai , Tomiyasu Maezono
Abstract: A substrate processing apparatus includes a mixing tank, a first opening/closing valve, a second opening/closing valve, a first flow rate measuring unit, a second flow rate measuring unit, a control unit, and a substrate processing unit. A first liquid and a second liquid are mixed such that the second liquid is mixed in an amount more than that of the first liquid. The first and second opening/closing valves open/close a first flow path and a second flow path, respectively. The first and second flow rate measuring units measure flow rates of the first and second liquids flowing through the first and second flow paths, respectively. The control unit controls opening/closing of the first opening/closing valve and the second opening/closing valve. The substrate processing unit processes a substrate by supplying a mixed liquid of the first and second liquids to the substrate.
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