公开(公告)号：US20220406572A1

公开(公告)日：2022-12-22

申请号：US17755406

申请日：2020-10-15

Applicant: Tokyo Electron Limited

Inventor： Kenichi OYAMA ,  Shohei YAMAUCHI ,  Kazuya DOBASHI ,  Akitaka SHIMIZU

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/02

Abstract: The present disclosure appropriately shortens a processing step for processing a substrate in which a silicon layer and a silicon germanium layer are alternatively laminated. The present disclosure provides a substrate processing method of processing the substrate in which the silicon layer and the silicon germanium layer are alternatively laminated, which includes forming an oxide film by selectively modifying a surface layer of an exposed surface of the silicon germanium layer by using a processing gas including fluorine and oxygen and converted into plasma.