公开(公告)号：US20210151326A1

公开(公告)日：2021-05-20

申请号：US16627449

申请日：2018-05-11

申请人： TOKYO ELECTRON LIMITED

发明人： Akitaka SHIMIZU ,  Shuichiro UDA ,  Takeshi SAITO ,  Taiki KATO

IPC分类号： H01L21/311 ,  H01L21/67 ,  H01J37/32

摘要： A method of selectively etching a silicon nitride film includes a first step of disposing a target substrate having the silicon nitride film formed thereon in a processing space, a second step of introducing a gas containing H and F into the processing space, and a third step of selectively introducing radicals of an inert gas into the processing space.

公开(公告)号：US20210090896A1

公开(公告)日：2021-03-25

申请号：US17027327

申请日：2020-09-21

申请人： TOKYO ELECTRON LIMITED

发明人： Akitaka SHIMIZU

IPC分类号： H01L21/311 ,  H01L21/3065 ,  H01L21/67

摘要： An etching method includes preparing a substrate having an etching target portion formed on a silicon-containing portion, plasma-etching the etching target portion of the substrate into a predetermined pattern by plasma of a processing gas containing a CF-based gas, and removing a damage layer formed due to implantation of C and F into the silicon-containing portion exposed at a bottom of the predetermined pattern by the plasma etching. The removing of the damage layer includes forming an oxide of the damage layer by supplying oxygen-containing radicals and fluorine-containing radicals and oxidizing the damage layer with the oxygen-containing radicals while etching the damage layer with the fluorine-containing radicals, and removing the oxide by a radical treatment or a chemical treatment with a gas.

公开(公告)号：US20170243725A1

公开(公告)日：2017-08-24

申请号：US15435202

申请日：2017-02-16

申请人： TOKYO ELECTRON LIMITED

发明人： Ryoji YAMAZAKI ,  Susumu SAITO ,  Koichi NAGAKURA ,  Akitaka SHIMIZU ,  Hidetoshi KINOSHITA

IPC分类号： H01J37/32

CPC分类号： H01J37/32449 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/3211 ,  H01J2237/334

摘要： In a plasma processing apparatus, insulating members are horizontally and separately arranged above a mounting unit in a processing chamber. Each insulating member serves as a partition between a vacuum atmosphere in the processing chamber and an external atmosphere of the processing chamber. Antennas are provided on the respective insulating members to generate an inductively coupled plasma. A first processing gas is supplied into the processing chamber and adsorbed onto a substrate on the mounting unit. A second processing gas is turned into a plasma by power supplied from the antennas and is supplied to activate the first processing gas adsorbed onto the substrate or react with the first processing gas adsorbed onto the substrate. The supply of the first processing gas and the supply of the second processing gas are alternately repeated multiple times with a process of evacuating an inside of the processing chamber interposed therebetween.

公开(公告)号：US20200321195A1

公开(公告)日：2020-10-08

申请号：US16905003

申请日：2020-06-18

申请人： Tokyo Electron Limited

发明人： Shigeki DOBA ,  Hiroyuki OGAWA ,  Hajime NAITO ,  Akitaka SHIMIZU ,  Tatsuo MATSUDO

IPC分类号： H01J37/32 ,  H01L21/67

摘要： A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.

公开(公告)号：US20190109012A1

公开(公告)日：2019-04-11

申请号：US15999361

申请日：2017-02-17

申请人： TOKYO ELECTRON LIMITED

发明人： Muneyuki IMAI ,  Akitaka SHIMIZU

IPC分类号： H01L21/311 ,  H01L21/321

摘要： In a substrate processing method for etching a silicon oxide layer formed on a surface of a substrate, a surface of the silicon oxide layer is hydrophilized. Then, the silicon oxide layer is etched by supplying a halogen-containing gas to the substrate and sublimating a reaction product generated by reaction between the halogen-containing gas and the silicon oxide layer.

公开(公告)号：US20150083580A1

公开(公告)日：2015-03-26

申请号：US14493904

申请日：2014-09-23

申请人： TOKYO ELECTRON LIMITED

发明人： Akitaka SHIMIZU ,  Tetsuya OHISHI

IPC分类号： C23C14/34

CPC分类号： C23C14/3457 ,  H01J37/32091 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/32137

摘要： A method includes: etching a target layer of a target object in a processing chamber by generating a plasma of a first gas containing at least one of SF6, ClF3 and F2 supplied into the processing chamber to; and forming a protective film on the target layer by generating a plasma of a second gas containing at least one of hydrocarbon, fluorocarbon, and fluorohydrocarbon supplied into the processing chamber. In the etching, a pressure in the processing chamber is set to a first pressure and a first bias power is applied to a lower electrode. In the forming, the pressure is set to a second pressure lower than the first pressure and a second bias power higher than the first bias power is applied to the lower electrode.

摘要翻译： 一种方法包括：通过产生包含供应到处理室中的至少一个SF6，ClF3和F2的第一气体的等离子体来蚀刻处理室中的目标物体的目标层; 以及通过产生包含供应到处理室中的烃，碳氟化合物和氟代烃中的至少一种的第二气体的等离子体，在目标层上形成保护膜。 在蚀刻中，将处理室中的压力设定为第一压力，向下部电极施加第一偏压功率。 在成形时，将压力设定为低于第一压力的第二压力，并且将高于第一偏压功率的第二偏压功率施加到下电极。

公开(公告)号：US20140284308A1

公开(公告)日：2014-09-25

申请号：US14219437

申请日：2014-03-19

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOKYO ELECTRON LIMITED

发明人： Shoichiro MATSUYAMA ,  Akitaka SHIMIZU ,  Susumu NOGAMI ,  Kiyohito ITO ,  Tokuhisa OHIWA ,  Katsunori YAHASHI

IPC分类号： H01J37/32

CPC分类号： H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/32366 ,  H01J37/32568 ,  H01J2237/334

摘要： There are provided a plasma etching method and a plasma etching apparatus, capable of suppressing occurrence of local bias in etching rate and suppressing occurrence of charge-up damage. The plasma etching method of etching a silicon layer of a substrate to be processed using the plasma etching apparatus sets the pressure in a processing chamber to 13.3 Pa or more and applies, to a lower electrode, a first high-frequency power with a first frequency and a second high-frequency power with a second frequency that is lower than the first frequency and is a frequency of 1 MHz or lower.

摘要翻译： 提供了等离子体蚀刻方法和等离子体蚀刻装置，其能够抑制蚀刻速度中的局部偏置的发生并且抑制充电损伤的发生。 使用等离子体蚀刻装置对待处理的基板的硅层进行蚀刻的等离子体蚀刻方法将处理室内的压力设定为13.3Pa以上，并向下部电极施加具有第一频率的第一高频电力 以及具有低于第一频率的第二频率并且是1MHz或更低的频率的第二高频功率。

公开(公告)号：US20180151380A1

公开(公告)日：2018-05-31

申请号：US15822658

申请日：2017-11-27

申请人： TOKYO ELECTRON LIMITED

发明人： Hiroyuki OGAWA ,  Akitaka SHIMIZU ,  Shigeki DOBA

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32422 ,  H01J2237/3174 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/6719

摘要： There is provided a substrate processing apparatus which includes: a process container configured to accommodate a substrate; a partition member disposed between plasma generated inside the process container and the substrate, the partition member configured to selectively transmit radicals in the plasma toward the substrate; and a heat shield plate disposed between the partition member and the substrate. The heat shield plate is disposed so as to face the substrate. The heat shield plate is made of metal or silicon and is connected to the process container.

公开(公告)号：US20150247235A1

公开(公告)日：2015-09-03

申请号：US14635978

申请日：2015-03-02

申请人： TOKYO ELECTRON LIMITED

发明人： Hiroki KISHI ,  Mitsuru HASHIMOTO ,  Keiichi SHIMODA ,  Eiichi NISHIMURA ,  Akitaka SHIMIZU

IPC分类号： C23C14/30 ,  H01J37/305

CPC分类号： C23C16/4405 ,  C23C16/4401 ,  H01J37/3053 ,  H01J37/32091 ,  H01J37/32862 ,  H01J2237/022

摘要： There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.

摘要翻译： 提供了一种清洁方法，用于通过使用在下部结构的下部电极和上部电极之间产生的等离子体，通过蚀刻包含金属的金属层来去除在上部电极上形成的第一沉积物，处理室中的等离子体 等离子体处理装置。 该方法包括使离子与上部电极上形成的第一沉积物碰撞的步骤，以及通过所述碰撞产生并形成在下部结构上产生的第二沉积物的步骤。 此外，重复多次包括冲突步骤和去除步骤的循环。

公开(公告)号：US20150214474A1

公开(公告)日：2015-07-30

申请号：US14616863

申请日：2015-02-09

申请人： Tokyo Electron Limited

发明人： Eiichi NISHIMURA ,  Akitaka SHIMIZU ,  Fumiko YAMASHITA

IPC分类号： H01L43/12 ,  H01L43/02 ,  H01L43/08

CPC分类号： H01L43/12 ,  C21D8/12 ,  C21D8/1277 ,  H01J2237/334 ,  H01L43/02 ,  H01L43/08

摘要： An etching method is provided for etching a multilayer film material that includes a metal laminated film having an insulating layer arranged between a first magnetic layer and a second magnetic layer. The etching method includes an etching step of generating a plasma by supplying a first gas to a processing chamber and etching the metal laminated film using the generated plasma. The first gas is a gas containing PF3 gas.

摘要翻译： 提供蚀刻方法来蚀刻包括具有布置在第一磁性层和第二磁性层之间的绝缘层的金属层压膜的多层膜材料。 蚀刻方法包括通过向处理室提供第一气体并使用所产生的等离子体蚀刻金属层压膜来产生等离子体的蚀刻步骤。 第一种气体是含有PF 3气体的气体。