公开(公告)号：US11574808B2

公开(公告)日：2023-02-07

申请号：US17176446

申请日：2021-02-16

Applicant: Tokyo Electron Limited

Inventor： Satoshi Itoh ,  Norifumi Kohama ,  Soudai Emori ,  Nathan Ip

IPC: H01L21/02 ,  C23C16/34 ,  H01L21/66 ,  H01J37/32 ,  C23C16/50 ,  C23C16/52

Abstract: A plasma processing method that is executed by a plasma processing apparatus including a processing container containing a target substrate, a plurality of plasma sources, and a gas supply apparatus for supplying gas includes: supplying the gas from the gas supply apparatus into the processing container; individually controlling intensity of power introduced from each of the plurality of plasma sources into the processing container; and generating plasma of the gas by the intensity of the power introduced from each of the plurality of plasma sources and depositing a desired film on a second surface of the target substrate that is an opposite surface of a first surface of the target substrate so as to apply desired film stress to a film on the first surface.