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公开(公告)号：US20240282617A1
公开(公告)日：2024-08-22
申请号：US18442522
申请日：2024-02-15
Applicant: Tokyo Electron Limited
Inventor： Kimio Motoda , Kenji Sugakawa , Norifumi Kohama , Hideyuki Fukushima , Shintaro Sugihara , Norio Wada
IPC: H01L21/683 , H01L21/67 , H01L21/68 , H01L21/687
CPC classification number: H01L21/6838 , H01L21/67288 , H01L21/681 , H01L21/68785
Abstract: A substrate processing apparatus is equipped with a holder having, on an attraction surface configured to attract a substrate, a circular central region and an annular outer region disposed outside the central region. The holder includes a first attracting pressure generator configured to generate an attracting pressure in the central region to attract the substrate to the holder; a second attracting pressure generator configured to generate an attracting pressure in the outer region to attract the substrate to the holder; and an external force applier configured to apply an external force to the substrate in the outer region in a direction in which the substrate becomes farther from the holder.
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公开(公告)号：US20210327773A1
公开(公告)日：2021-10-21
申请号：US17269366
申请日：2019-08-20
Applicant: Tokyo Electron Limited
Inventor： Norifumi Kohama
Abstract: A parameter adjustment method includes an acquisition process and a parameter changing process. The acquisition process acquires, from an inspection apparatus configured to inspect a combined substrate in which the first substrate and the second substrate are bonded by the bonding apparatus, an inspection result indicating a direction and a degree of distortion occurring in the combined substrate. The parameter changing process changes at least one of multiple parameters including at least one of the gap, an attraction pressure of the first substrate by the first holder, an attraction pressure of the second substrate by the second holder or a pressing force on the first substrate by the striker, based on trend information indicating a tendency of a change in the direction and the degree of the distortion when each of the multiple parameters is changed and the inspection result acquired in the acquiring of the inspection result.
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公开(公告)号：US20180323089A1
公开(公告)日：2018-11-08
申请号：US15967788
申请日：2018-05-01
Applicant: Tokyo Electron Limited
Inventor： Norio Wada , Norifumi Kohama , Kimio Motoda
IPC: H01L21/67 , H01L21/683
CPC classification number: H01L21/67098 , H01L21/67259 , H01L21/683
Abstract: A local deformation which is generated on bonded substrates can be reduced. A bonding apparatus includes a first holding unit configured to attract and hold a first substrate from above; a second holding unit configured to attract and hold a second substrate from below; a striker configured to bring the first substrate into contact with the second substrate by pressing a central portion of the first substrate from above; a moving unit configured to move the second holding unit between a non-facing position where the second holding unit does not face the first holding unit and a facing position where the second holding unit faces the first holding unit; and a temperature control unit disposed to face the second holding unit placed at the non-facing position and configured to locally adjust a temperature of the second substrate attracted to and held by the second holding unit.
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公开(公告)号：US20240395573A1
公开(公告)日：2024-11-28
申请号：US18671145
申请日：2024-05-22
Applicant: Tokyo Electron Limited
Inventor： Atsushi Nagata , Takuro Masuzumi , Norifumi Kohama , Hayato Tanoue
IPC: H01L21/67 , H01L21/66 , H01L21/683
Abstract: A bonding method of bonding substrates to each other includes forming a combined substrate by gradually bonding, with a central portion of a first substrate and a central portion of a second substrate in contact with each other, the first substrate and the second substrate from the central portions toward outer peripheral portions thereof; measuring a bonding speed in the bonding from the central portions toward the outer peripheral portions; and estimating, based on the measured bonding speed, bonding strength of the bonded combined substrate from a relationship between bonding speed and bonding strength.
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公开(公告)号：US20240105497A1
公开(公告)日：2024-03-28
申请号：US18475593
申请日：2023-09-27
Applicant: Tokyo Electron Limited
Inventor： Yosuke Omori , Norifumi Kohama
IPC: H01L21/687 , H01L21/67 , H01L21/683 , H01L23/00
CPC classification number: H01L21/68764 , H01L21/67259 , H01L21/6838 , H01L24/74 , H01L2224/74 , H01L2924/401
Abstract: A substrate processing apparatus includes a holder configured to hold a substrate by attracting the substrate on an attraction surface. The attraction surface includes an outer attraction portion configured to attract an outer peripheral portion of the substrate and an inner attraction portion configured to attract a portion of the substrate at an inner side than the outer peripheral portion. The holder includes a transforming unit configured to transform the outer attraction portion relative to the inner attraction portion.
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Patent Agency Ranking
公开(公告)号：US11574808B2
公开(公告)日：2023-02-07
申请号：US17176446
申请日：2021-02-16
Applicant: Tokyo Electron Limited
Inventor： Satoshi Itoh , Norifumi Kohama , Soudai Emori , Nathan Ip
Abstract: A plasma processing method that is executed by a plasma processing apparatus including a processing container containing a target substrate, a plurality of plasma sources, and a gas supply apparatus for supplying gas includes: supplying the gas from the gas supply apparatus into the processing container; individually controlling intensity of power introduced from each of the plurality of plasma sources into the processing container; and generating plasma of the gas by the intensity of the power introduced from each of the plurality of plasma sources and depositing a desired film on a second surface of the target substrate that is an opposite surface of a first surface of the target substrate so as to apply desired film stress to a film on the first surface.
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公开(公告)号：US20240274462A1
公开(公告)日：2024-08-15
申请号：US18441518
申请日：2024-02-14
Applicant: Tokyo Electron Limited
Inventor： Makoto Fujiwara , Kenji Sugakawa , Hideyuki Fukushima , Norifumi Kohama , Daisuke Ikemoto
IPC: H01L21/683 , H01L21/02 , H01L21/67 , H01L21/687
CPC classification number: H01L21/6838 , H01L21/02035 , H01L21/67092 , H01L21/67288 , H01L21/68714
Abstract: A substrate processing apparatus is equipped with a holder having, on an attraction surface configured to attract a substrate, a circular central region and an annular outer region disposed outside the central region. The substrate processing apparatus includes an attracting pressure generator configured to generate an attracting pressure in the central region and each of multiple zones separated along a circumferential direction of the outer region individually; a transforming device configured to transform the central region relative to an outer edge of the holder. A controller controls: attracting the substrate to the attraction surface, based on a bending state of the substrate, by generating the attracting pressure in at least some of the multiple zones of the outer region; and transforming, after the attracting of the substrate, the attraction surface while carrying on the attracting of the substrate.
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公开(公告)号：US11482431B2
公开(公告)日：2022-10-25
申请号：US16964008
申请日：2019-01-11
Applicant: Tokyo Electron Limited
Inventor： Kimio Motoda , Norifumi Kohama , Norio Wada , Yosuke Omori , Kenji Sugakawa
IPC: H01L21/683 , H01L21/67 , H01L21/68 , H01L21/687
Abstract: A substrate processing apparatus includes a holder having thereon an attraction surface configured to attract a substrate and including an outer attracting member configured to attract a peripheral portion of the substrate and an inner attracting member configured to attract a portion of the substrate inside the peripheral portion of the substrate attracted by the outer attracting member in a diametrical direction of the attraction surface; a moving device configured to move the outer attracting member with respect to the inner attracting member; and a controller configured to control a distortion, which is caused at the substrate attracted to the attraction surface, by controlling a movement of the outer attracting member with respect to the inner attracting member.
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公开(公告)号：US20210242027A1
公开(公告)日：2021-08-05
申请号：US16973515
申请日：2019-05-29
Applicant: Tokyo Electron Limited
Inventor： Norifumi Kohama , Takayuki Ishii
IPC: H01L21/304 , H01L21/67 , H01L21/687 , H01L21/263 , B23K26/53 , B23K26/324
Abstract: A substrate processing method of processing a substrate includes: forming a modification layer at least on a surface layer of a rear surface of the substrate or within the substrate by radiating a laser beam; and processing a front surface of the substrate in a state that the rear surface of the substrate is held. A modification device includes a laser irradiation unit configured to form a modification layer at least on a surface layer of the rear surface of the substrate or within the substrate by radiating a laser beam.
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公开(公告)号：US11721596B2
公开(公告)日：2023-08-08
申请号：US17269366
申请日：2019-08-20
Applicant: Tokyo Electron Limited
Inventor： Norifumi Kohama
CPC classification number: H01L22/26 , H01L24/75 , H01L24/83 , H01L2224/75901 , H01L2224/83893
Abstract: A parameter adjustment method includes an acquisition process and a parameter changing process. The acquisition process acquires, from an inspection apparatus configured to inspect a combined substrate in which the first substrate and the second substrate are bonded by the bonding apparatus, an inspection result indicating a direction and a degree of distortion occurring in the combined substrate. The parameter changing process changes at least one of multiple parameters including at least one of the gap, an attraction pressure of the first substrate by the first holder, an attraction pressure of the second substrate by the second holder or a pressing force on the first substrate by the striker, based on trend information indicating a tendency of a change in the direction and the degree of the distortion when each of the multiple parameters is changed and the inspection result acquired in the acquiring of the inspection result.
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