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公开(公告)号:US20220384146A1
公开(公告)日:2022-12-01
申请号:US17804379
申请日:2022-05-27
Applicant: Tokyo Electron Limited
Inventor: Syouji YAMAGISHI , Hiroki EHARA , Hiroyuki HAYASHI , Jun NAKAGOMI
IPC: H01J37/32
Abstract: A plasma processing apparatus includes a process container, a power supply configured to supply radio frequency or microwave power for generating plasma in the process container, a plurality of gas nozzles, each having a gas flow passage therein, and a plurality of protrusions formed integrally with a ceiling wall and/or a sidewall that defines the process container, the plurality of protrusions protruding from the ceiling wall and/or the sidewall. Each of the plurality of protrusions has a gas hole at a leading end of the protrusion. The ceiling wall and/or the sidewall has recesses in which the plurality of gas nozzles is arranged, respectively, such that the gas flow passage of each of the plurality of gas nozzles communicates with the gas hole of each of the plurality of protrusions.