公开(公告)号：US20200312677A1

公开(公告)日：2020-10-01

申请号：US16821133

申请日：2020-03-17

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Keita KUMAGAI ,  Keisuke FUJITA ,  Hiroyuki HAYASHI ,  Daisuke Suzuki ,  Rui KANEMURA ,  Sena FUJITA

IPC: H01L21/67 ,  H01L21/04 ,  H01L21/768

Abstract: A substrate processing apparatus includes a processing container configured to accommodate a plurality of substrates therein, a gas supply configured to supply a first raw material gas of a compound containing Si or Ge and H and a second raw material gas of a compound containing Si or Ge and a halogen element into the processing container; and an exhauster configured to evacuate an inside of the processing container, wherein the gas supply has a dispersion nozzle provided with a plurality of gas holes for discharging the first raw material gas and the second raw material gas, and the substrate processing apparatus further comprises a heater configured to heat the first raw material gas and the second raw material gas in the dispersion nozzle.

公开(公告)号：US20200058499A1

公开(公告)日：2020-02-20

申请号：US16539157

申请日：2019-08-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Rui KANEMURA ,  Hiroyuki HAYASHI

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/56 ,  C23C16/52 ,  C23C16/24

Abstract: A film forming method for forming a silicon film having a step coverage on a substrate having a recess in a surface of the substrate, the film forming method comprising: forming a silicon film such that a film thickness on an upper portion of a side wall of the recess is thicker than a film thickness on a lower portion of the side wall of the recess by supplying a silicon-containing gas to the substrate; and etching a portion of the silicon film conformally by supplying an etching gas to the substrate, wherein the act of forming the silicon film and the act of etching the portion of the silicon film are performed a number of times which is determined depending on the step coverage.

公开(公告)号：US20220319845A1

公开(公告)日：2022-10-06

申请号：US17654628

申请日：2022-03-14

Applicant: Tokyo Electron Limited

Inventor： Tatsuya MIYAHARA ,  Yoshihiro TAKEZAWA ,  Daisuke SUZUKI ,  Hiroyuki HAYASHI

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/52

Abstract: To provide a method of depositing a silicon film that can crystallize the silicon film at low temperature and in a short time, and also can deposit the silicon film with high flatness. A method of depositing a silicon film includes supplying a silicon-containing gas on a seed layer, depositing an amorphous silicon film on the seed layer, supplying chlorosilane gas to the amorphous silicon film, and crystallizing the amorphous silicon film while forming a chlorosilane cap layer on the amorphous silicon film.

公开(公告)号：US20200230666A1

公开(公告)日：2020-07-23

申请号：US16744637

申请日：2020-01-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihiro TAKEZAWA ,  Daisuke SUZUKI ,  Hiroyuki HAYASHI ,  Sena FUJITA ,  Tatsuya MIYAHARA ,  Jyunji ARIGA ,  Shinya KIKUCHI

IPC: B08B9/027 ,  B08B5/00 ,  H01L21/67

Abstract: There is provided a cleaning method of a substrate processing apparatus comprising cleaning an inside of an exhaust pipe through which a gas of an inside of a processing container is exhausted. The cleaning the inside of the exhaust pipe includes: removing a deposit on a downstream side of an opening/closing valve in the exhaust pipe by supplying a first exhaust pipe cleaning gas containing fluorine to the downstream side of the opening/closing valve in the exhaust pipe in a state in which the opening/closing valve provided in a middle of the exhaust pipe is closed; and removing a deposit on an upstream side of the opening/closing valve in the exhaust pipe by supplying a second exhaust pipe cleaning gas not containing fluorine as a gas constituent element to the inside of the processing container in a state in which the opening/closing valve is opened.

公开(公告)号：US20140248784A1

公开(公告)日：2014-09-04

申请号：US14194318

申请日：2014-02-28

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki HAYASHI ,  Sumi TANAKA

IPC: H01L21/324 ,  H05B6/64 ,  H01L21/67

CPC classification number: H01L21/324 ,  H01L21/67115 ,  H05B6/70 ,  H05B6/80 ,  H05B2206/044

Abstract: A microwave processing apparatus includes a processing chamber configured to accommodate an object to be processed, a support member configured to support the object by contact with the object in the processing chamber, and a microwave introducing unit configured to generate a microwave for processing the object and introduce the microwave into the processing chamber. The microwave processing apparatus further includes a heat absorbing layer provided on a wall surface of a member facing the object supported by the supporting member in the processing chamber. The heat absorbing layer is made of a material that transmits the microwave and has an emissivity higher than an emissivity of the member facing the object.

Abstract translation: 一种微波处理装置，包括：被配置为容纳被处理物的处理室，被配置为通过与处理室中的物体接触来支撑物体的支撑构件;以及微波引入单元，其被配置为产生用于处理所述物体的微波， 将微波引入处理室。 微波处理装置还包括设置在面对由处理室中的支撑构件支撑的物体的构件的壁面上的吸热层。 吸热层由透射微波并且具有高于面向物体的构件的发射率的发射率的材料制成。

公开(公告)号：US20210202248A1

公开(公告)日：2021-07-01

申请号：US17132656

申请日：2020-12-23

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Daisuke SUZUKI ,  Hiroyuki HAYASHI ,  Yutaka MOTOYAMA

IPC: H01L21/02

Abstract: A film forming method includes: forming a laminated film, in which an interface layer, a bulk layer, and a surface layer are laminated in this order, on a base; and crystallizing the laminated film, wherein the bulk layer is formed of a film that is easier to crystallize than the interface layer in crystallizing the laminated film, and wherein the surface layer is formed of a film that is easier to crystallize than the bulk layer in crystallizing the laminated film.

公开(公告)号：US20190259599A1

公开(公告)日：2019-08-22

申请号：US16281418

申请日：2019-02-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki HAYASHI ,  Rui KANEMURA ,  Satoshi TAKAGI ,  Mitsuhiro OKADA

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/311

Abstract: There is provided a film forming method comprising an organic substance removal step of removing an organic substance adhering to an oxide film generated on a surface of a base by supplying a hydrogen-containing gas and an oxygen-containing gas to the base; an oxide film removal step of removing the oxide film formed on the surface of the base after the organic substance removal step; and a film forming step of forming a predetermined film on the surface of the base after the oxide film removal step.

公开(公告)号：US20150037970A1

公开(公告)日：2015-02-05

申请号：US14447060

申请日：2014-07-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Kazuya TAKAHASHI ,  Katsuhiko KOMORI ,  Yoshikazu FURUSAWA ,  Mitsuhiro OKADA ,  Hiroyuki HAYASHI ,  Akinobu KAKIMOTO

IPC: H01L21/768 ,  H01L21/285

CPC classification number: C23C16/045 ,  C23C16/24 ,  H01L21/28556 ,  H01L21/32055 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; and forming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer, wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees C. or lower and a room temperature or higher.

Abstract translation: 本公开内容提供了一种用于在具有加工表面的工件上形成硅膜的硅膜形成方法，包括：通过将分子式中含有两个或更多个硅原子的高级氨基硅烷系气体供给到 并且通过使硅吸附在处理过的表面上; 以及通过将不含有氨基的硅烷类气体供给到种子层上并通过在种子层上沉积硅而形成硅膜，其中，当形成种子层时，将处理温度设定在350℃的范围内 或更低，室温以上。

公开(公告)号：US20200312661A1

公开(公告)日：2020-10-01

申请号：US16830835

申请日：2020-03-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki HAYASHI ,  Sena FUJITA ,  Keita KUMAGAI ,  Keisuke FUJITA

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/46 ,  C23C16/455

Abstract: There is provided a film forming method including: supplying a halogen-free silicon raw material gas and a halogen-containing silicon raw material gas into a processing container while lowering a temperature of a substrate accommodated in the processing container from a first temperature to a second temperature in a temperature lowering process; and supplying the halogen-free silicon raw material gas and the halogen-containing silicon raw material gas into the processing container while maintaining the temperature of the substrate at a third temperature in a temperature stabilizing process, that occurs after the temperature lowering process.

公开(公告)号：US20200294800A1

公开(公告)日：2020-09-17

申请号：US16815682

申请日：2020-03-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka MOTOYAMA ,  Hiroyuki HAYASHI

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/67

Abstract: A film forming method includes forming an amorphous semiconductor film on a recess, forming a first polycrystalline semiconductor film by performing heat treatment on the amorphous semiconductor film, and forming a second polycrystalline semiconductor film on the first polycrystalline semiconductor film formed by the heat treatment.