公开(公告)号：US20220384146A1

公开(公告)日：2022-12-01

申请号：US17804379

申请日：2022-05-27

Applicant: Tokyo Electron Limited

Inventor： Syouji YAMAGISHI ,  Hiroki EHARA ,  Hiroyuki HAYASHI ,  Jun NAKAGOMI

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a process container, a power supply configured to supply radio frequency or microwave power for generating plasma in the process container, a plurality of gas nozzles, each having a gas flow passage therein, and a plurality of protrusions formed integrally with a ceiling wall and/or a sidewall that defines the process container, the plurality of protrusions protruding from the ceiling wall and/or the sidewall. Each of the plurality of protrusions has a gas hole at a leading end of the protrusion. The ceiling wall and/or the sidewall has recesses in which the plurality of gas nozzles is arranged, respectively, such that the gas flow passage of each of the plurality of gas nozzles communicates with the gas hole of each of the plurality of protrusions.

公开(公告)号：US20210110999A1

公开(公告)日：2021-04-15

申请号：US17063088

申请日：2020-10-05

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Hiroki EHARA

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a processing container; and a plurality of gas nozzles protruding from at least one of a top wall and a side wall that constitute the processing container, and including a gas supply hole configured to supply a gas into the processing container. The plurality of gas nozzles include an enlarged diameter portion that is enlarged from a pore of the gas supply hole at a tip end of the gas supply hole of the plurality of gas nozzles, and is opened to a processing space.

公开(公告)号：US20180112312A1

公开(公告)日：2018-04-26

申请号：US15784617

申请日：2017-10-16

Applicant: Tokyo Electron Limited

Inventor： Masaya ODAGIRI ,  Hirotaka KUWADA ,  Hiroki EHARA ,  Yukihiro TAMEGAI ,  Tsuyoshi TAKAHASHI ,  Hideo NAKAMURA ,  Kazuyoshi YAMAZAKI ,  Yoshikazu IDENO

IPC: C23C16/455 ,  C23C16/30

CPC classification number: C23C16/45548 ,  C23C16/303 ,  C23C16/34 ,  C23C16/448 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/45574

Abstract: Disclosed is a film forming apparatus that forms a TiN film on a wafer by an ALD method. The film forming apparatus includes a chamber configured to accommodate the wafer, a gas supply mechanism configured to supply a titanium raw material gas including a TiCl4 gas, a nitriding gas including a NH3 gas, and a purge gas into the chamber, an exhaust mechanism configured to evacuate the inside of the chamber, and a controller configured to control the gas supply mechanism such that the TiCl4 gas and the NH3 gas are alternately supplied into the wafer. The gas supply mechanism has an NH3 gas heating unit configured to heat the NH3 gas to change a state of the NH3 gas and supplies the NH3 gas, the state of which is changed by the NH3 gas heating unit, into the chamber.