公开(公告)号：US20230019943A1

公开(公告)日：2023-01-19

申请号：US17861566

申请日：2022-07-11

Applicant: Tokyo Electron Limited

Inventor： Hajime NAKABAYASHI ,  Tomohito YAMAJI ,  Kazuki YAMADA ,  Ryuichi ASAKO

IPC: G03F1/22 ,  H01L21/033

Abstract: A pattern formation method includes: forming a photosensitive hard mask made of a transition metal oxide film on a surface of a substrate; exposing the photosensitive hard mask to EUV light in a desired pattern; causing a state change in an exposed region by heat generated during exposure; and selectively removing either a region where the state change has occurred or a region where the state change has not occurred.