公开(公告)号：US20230019943A1

公开(公告)日：2023-01-19

申请号：US17861566

申请日：2022-07-11

Applicant: Tokyo Electron Limited

Inventor： Hajime NAKABAYASHI ,  Tomohito YAMAJI ,  Kazuki YAMADA ,  Ryuichi ASAKO

IPC: G03F1/22 ,  H01L21/033

Abstract: A pattern formation method includes: forming a photosensitive hard mask made of a transition metal oxide film on a surface of a substrate; exposing the photosensitive hard mask to EUV light in a desired pattern; causing a state change in an exposed region by heat generated during exposure; and selectively removing either a region where the state change has occurred or a region where the state change has not occurred.

公开(公告)号：US20240128307A1

公开(公告)日：2024-04-18

申请号：US18275908

申请日：2022-01-31

Applicant: Tokyo Electron Limited

Inventor： Rintaro HIGUCHI ,  Mitsunori NAKAMORI ,  Koji KAGAWA ,  Kenji SEKIGUCHI ,  Hajime NAKABAYASHI ,  Syuhei YONEZAWA

IPC: H01G4/08 ,  C23C16/34 ,  C23C16/40 ,  C23C16/56

CPC classification number: H01L28/40 ,  C23C16/34 ,  C23C16/403 ,  C23C16/405 ,  C23C16/56

Abstract: A substrate processing method includes: (A) preparing a substrate, on which a high-dielectric film having a higher permittivity than a SiO2 film is formed; (B) supplying, to the substrate, a metal solution containing a second metal element having a higher electronegativity or a lower valence than a first metal element contained in the high-dielectric film; and (C) forming a doping layer, in which the first metal element is substituted with the second metal element, on a surface of the high-dielectric film.

公开(公告)号：US20190123165A1

公开(公告)日：2019-04-25

申请号：US16169233

申请日：2018-10-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji AKIYAMA ,  Hajime NAKABAYASHI ,  Kazuki HASHIMOTO ,  Sara OTSUKI

IPC: H01L29/51 ,  H01L29/49 ,  H01L29/12 ,  H01L27/092

Abstract: There is provided a semiconductor device. The semiconductor device includes a first electrode made of a metal, a first semiconductor, a first insulating film configured to be provided between the first electrode and the first semiconductor and to be made of an insulating transition metal oxide and an intermediate film configured to be provided between the first electrode and the first insulating film. A lower end of a conduction band of the intermediate film is lower than a Fermi level of the metal constituting the first electrode.

公开(公告)号：US20140162428A1

公开(公告)日：2014-06-12

申请号：US14177858

申请日：2014-02-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hajime NAKABAYASHI ,  Kenichi OYAMA ,  Yoshihiro HIROTA

IPC: H01L45/00

CPC classification number: H01L45/1683 ,  G11C13/0004 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/1675

Abstract: A phase change memory includes an insulating layer on a substrate, an electrode layer having one pole and an electrode layer having another pole within the insulating layer, an opening portion whose lower portion on an upper portion of the insulating layer is substantially square or substantially rectangular, a phase change portion formed substantially parallel to a surface of the substrate along the respective sides of the lower portion of the opening portion, and two connection electrodes having a pole and connected to the phase change portion at two opposing corners of the lower portion of the opening portion connecting a diode portion connected to the electrode layer having one pole and the phase change portion, and two connection electrodes having another pole and connected to the phase change portion at the other two opposing corners connecting the phase change portion and the electrode layer having another pole.

Abstract translation: 相变存储器包括在基板上的绝缘层，具有一极的电极层和在绝缘层内具有另一极的电极层，其绝缘层的上部的下部基本上为正方形或大致矩形的开口部 ，形成为沿基板的表面大致平行于开口部的下部的各侧的相变部，以及具有极点的两个连接电极，并在该下部的两个相对的拐角处与相变部连接 连接到具有一个极的电极层的二极管部分和相变部分的开口部分，以及具有另一个极点的两个连接电极，并且在连接相变部分和电极层的另外两个相对的拐角处连接到相变部分 有另一个极点。

公开(公告)号：US20190074216A1

公开(公告)日：2019-03-07

申请号：US16123214

申请日：2018-09-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hajime NAKABAYASHI ,  Koji AKIYAMA

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/64

Abstract: There is provided a semiconductor device including: a first wiring; a second wiring; a dielectric layer configured to insulate the first wiring and the second wiring from each other; and an impedance adjustment layer formed between the first wiring and the second wiring, and configured to adjust an impedance between the first wiring and the second wiring.

公开(公告)号：US20140034893A1

公开(公告)日：2014-02-06

申请号：US13957795

申请日：2013-08-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hajime NAKABAYASHI ,  Yoshihiro HIROTA

IPC: H01L45/00

CPC classification number: H01L45/144 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616

Abstract: A switch device used in a crossbar memory array having a non-volatile memory includes: a laminated body formed of a semiconductor film and an insulating film laminated on the semiconductor film; and a pair of electrode layers having the laminated body therebetween. The semiconductor film is made of a semiconductor material having an I-V characteristic with a negative resistance region.

Abstract translation: 在具有非易失性存储器的交叉开关存储器阵列中使用的开关装置包括：由半导体膜和层压在半导体膜上的绝缘膜形成的层叠体; 以及一对在其间具有层叠体的电极层。 半导体膜由具有负电阻区域的I-V特性的半导体材料制成。

公开(公告)号：US20240304439A1

公开(公告)日：2024-09-12

申请号：US18273116

申请日：2022-01-13

Applicant: Tokyo Electron Limited

Inventor： Koji AKIYAMA ,  Philippe GAUBERT ,  Hajime NAKABAYASHI ,  Chihiro TAMURA ,  Hisashi WARASHINA

IPC: H01L21/02 ,  C23C8/10 ,  H01L21/67 ,  H01L23/00

CPC classification number: H01L21/02244 ,  C23C8/10 ,  H01L21/02175 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/67288 ,  H01L23/562

Abstract: A substrate processing method includes: forming a metal film, which changes in volume when the metal film is oxidized, on a rear surface of a substrate; forming an oxide film, through which oxygen permeates, on a front surface of the metal film; and applying stress to the substrate by oxidizing the metal film.

公开(公告)号：US20230361163A1

公开(公告)日：2023-11-09

申请号：US18246391

申请日：2021-09-10

Applicant: Tokyo Electron Limited

Inventor： Koji AKIYAMA ,  Hajime NAKABAYASHI ,  Akinobu KAKIMOTO ,  Nobutake KABUKI ,  Yumiko KAWANO ,  Sara OTSUKI

IPC: H01L21/02 ,  C23C16/455

CPC classification number: H01L28/60 ,  C23C16/45529

Abstract: This film formation method comprises: a first film formation step; a second film formation step; and a third film formation step. In the first film formation step, a dielectric film is formed on a first conductive film. In the second film formation step, a metal oxide film is formed on the dielectric film. In addition, in the second film formation step, a metal oxide film is formed using heated oxygen gas and a vapor of an organic metal compound. In the third film formation step, a second conductive film is formed on the metal oxide film.

公开(公告)号：US20210399085A1

公开(公告)日：2021-12-23

申请号：US17279830

申请日：2019-09-19

Applicant: Tokyo Electron Limited

Inventor： Yumiko KAWANO ,  Genji NAKAMURA ,  Philippe GAUBERT ,  Hajime NAKABAYASHI

IPC: H01L49/02

Abstract: A method of manufacturing a semiconductor device includes a first laminating step, a second laminating step, a third laminating step, a first annealing step, and a fourth laminating step. In the first laminating step, a first electrode film is laminated on a substrate. In the second laminating step, a capacitive insulator is laminated on the first electrode film. In the third laminating step, a metal oxide is laminated on the capacitive insulator. In the first annealing step, the first electrode film, the capacitive insulator, and the metal oxide, which are laminated on the substrate, are annealed. In the fourth laminating step, a second electrode film is laminated on the annealed metal oxide. The capacitive insulator is an oxide that contains at least one of zirconium and hafnium, and the metal oxide is an oxide that contains at least one of tungsten, molybdenum, and vanadium.

公开(公告)号：US20190096750A1

公开(公告)日：2019-03-28

申请号：US16144311

申请日：2018-09-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yumiko KAWANO ,  Shuji AZUMO ,  Hiroki MURAKAMI ,  Michitaka AITA ,  Tadahiro ISHIZAKA ,  Koji AKIYAMA ,  Yusaku KASHIWAGI ,  Hajime NAKABAYASHI

IPC: H01L21/768

Abstract: A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, using an Ru(EtCp)2 gas and an O2 gas; and selectively forming a first SiO2-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.