公开(公告)号：US20200312695A1

公开(公告)日：2020-10-01

申请号：US16830879

申请日：2020-03-26

Applicant: Tokyo Electron Limited

Inventor： Toru TAKAHASHI ,  Hiroshi TSUJIMOTO ,  Nobuaki SHINDO ,  Shigeru YONEDA

IPC: H01L21/683 ,  H01L21/66 ,  H01J37/32

Abstract: A method of processing a substrate includes: a placement step of placing the substrate on an electrostatic chuck set to have a predetermined temperature; a first attraction step of attracting the substrate onto the electrostatic chuck by applying a first direct current (DC) voltage to the electrostatic chuck; a holding step of holding the attraction of the substrate by the electrostatic chuck while applying the first DC voltage to the electrostatic chuck, until a temperature difference between the electrostatic chuck and the substrate becomes 30 degrees C. or less; and a second attraction step of attracting the substrate onto the electrostatic chuck by applying a second DC voltage, which is higher than the first DC voltage, to the electrostatic chuck.