公开(公告)号：US20220037133A1

公开(公告)日：2022-02-03

申请号：US17443561

申请日：2021-07-27

Applicant: Tokyo Electron Limited

Inventor： Yasutaka HAMA ,  Nobuaki SHINDO

IPC: H01J37/32 ,  H01L21/02

Abstract: A method of cleaning a plasma processing apparatus includes: disposing a first dummy substrate at a first position with respect to a stage inside a chamber and performing a first dry cleaning process inside the chamber; and disposing a second dummy substrate at a second position with respect to the stage inside the chamber and performing a second dry cleaning process inside the chamber, wherein each of a center of the first position and a center of the second position is located at a different position from a center of the stage in a plan view, and wherein the first position and the second position are different from each other in a plan view.

公开(公告)号：US20240063000A1

公开(公告)日：2024-02-22

申请号：US18385528

申请日：2023-10-31

Applicant: Tokyo Electron Limited

Inventor： Yasutaka HAMA ,  Nobuaki SHINDO

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32862 ,  H01J37/32715 ,  H01L21/02046 ,  H01J37/32642 ,  H01J2237/332 ,  H01J2237/335

Abstract: A method of cleaning a plasma processing apparatus includes: disposing a first dummy substrate at a first position with respect to a stage inside a chamber and performing a first dry cleaning process inside the chamber; and disposing a second dummy substrate at a second position with respect to the stage inside the chamber and performing a second dry cleaning process inside the chamber, wherein each of a center of the first position and a center of the second position is located at a different position from a center of the stage in a plan view, and wherein the first position and the second position are different from each other in a plan view.

公开(公告)号：US20200312695A1

公开(公告)日：2020-10-01

申请号：US16830879

申请日：2020-03-26

Applicant: Tokyo Electron Limited

Inventor： Toru TAKAHASHI ,  Hiroshi TSUJIMOTO ,  Nobuaki SHINDO ,  Shigeru YONEDA

IPC: H01L21/683 ,  H01L21/66 ,  H01J37/32

Abstract: A method of processing a substrate includes: a placement step of placing the substrate on an electrostatic chuck set to have a predetermined temperature; a first attraction step of attracting the substrate onto the electrostatic chuck by applying a first direct current (DC) voltage to the electrostatic chuck; a holding step of holding the attraction of the substrate by the electrostatic chuck while applying the first DC voltage to the electrostatic chuck, until a temperature difference between the electrostatic chuck and the substrate becomes 30 degrees C. or less; and a second attraction step of attracting the substrate onto the electrostatic chuck by applying a second DC voltage, which is higher than the first DC voltage, to the electrostatic chuck.

公开(公告)号：US20210233793A1

公开(公告)日：2021-07-29

申请号：US17156068

申请日：2021-01-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasutaka HAMA ,  Nobuaki SHINDO ,  Shigeru YONEDA

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/3065 ,  H01J37/32

Abstract: A method of processing a substrate includes: (a) placing the substrate on an electrostatic chuck, and applying a direct current voltage to the electrostatic chuck to hold the substrate on the electrostatic chuck; (b) supplying a radio frequency power to an electrode to generate plasma of an inert gas; (c) stopping the application of the direct current voltage to the electrostatic chuck; and (d) gradually decreasing the radio frequency power supplied to the electrode to 0 W.

公开(公告)号：US20210175049A1

公开(公告)日：2021-06-10

申请号：US17112111

申请日：2020-12-04

Applicant: Tokyo Electron Limited

Inventor： Yasutaka HAMA ,  Ryo MATSUBARA ,  Nobuaki SHINDO

IPC: H01J37/32

Abstract: A temperature changing method includes changing a pressure of a gas supplied from a gas supply to a gap between the substrate and an electrostatic chuck from a first pressure to a second pressure being lower than the first pressure, changing a voltage applied to the electrostatic chuck from a first voltage to a second voltage being lower than the first voltage, changing a temperature of the electrostatic chuck from a first temperature to a second temperature, electrostatically attracting the substrate by the electrostatic chuck for a time in a state where the gas pressure is the second pressure and the voltage is the second voltage, changing the gas pressure from the second pressure to a third pressure being lower than the first pressure and higher than the second pressure, and changing the voltage from the second voltage to a third voltage being higher than the second voltage.

公开(公告)号：US20140116620A1

公开(公告)日：2014-05-01

申请号：US14058538

申请日：2013-10-21

Applicant: Tokyo Electron Limited

Inventor： Yusei KUWABARA ,  Nobuaki SHINDO ,  Sachie ISHIBASHI ,  Takahiko KATO ,  Noboru MAEDA

IPC: H01J37/04

CPC classification number: H01J37/32568 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32036 ,  H01J37/32091 ,  H01J37/32449

Abstract: A plasma processing apparatus includes an upper electrode arranged at a processing chamber and including a plurality of gas supplying zones, a branch pipe including a plurality of branch parts, an addition pipe connected to at least one of the branch parts, and a plurality of gas pipes that connect the branch parts to the gas supplying zones. The upper electrode supplies a processing gas including a main gas to the processing chamber via the gas supplying zones. The branch pipe divides the processing gas according to a predetermined flow rate ratio and supplies the divided processing gas to the gas supplying zones. The addition pipe adds an adjustment gas. A gas flow path of the gas pipe connected to the branch part to which the addition pipe is connected includes a bending portion for preventing a gas concentration variation according to an adjustment gas-to-main gas molecular weight ratio.

Abstract translation: 一种等离子体处理装置，包括布置在处理室中并包括多个气体供应区的上部电极，包括多个分支部分的分支管，连接到至少一个分支部分的添加管和多个气体 将分支部分连接到供气区的管道。 上部电极经由气体供给区域向处理室供给包括主要气体的处理气体。 分支管根据预定的流量比将处理气体分开，并将分配的处理气体供应到气体供应区。 添加管添加调节气体。 连接到与添加管连接的分支部分的气体管道的气体流路包括用于根据调节气体 - 主要气体分子量比来防止气体浓度变化的弯曲部分。