公开(公告)号：US20240304452A1

公开(公告)日：2024-09-12

申请号：US18701058

申请日：2022-10-12

Applicant: Tokyo Electron Limited

Inventor： Tsunemoto OGATA ,  Suguen LEE ,  Hiroshi MARUMOTO

IPC: H01L21/306 ,  H01L21/67

CPC classification number: H01L21/30604 ,  H01L21/6708

Abstract: A substrate processing method including a first etching process of performing etching, where a first process liquid paddle is formed on an entire surface of a substrate, by locally discharging a second process liquid from a nozzle toward a target area locally set on the substrate surface, such that an etching rate in the target area differs from that in other areas; and a second etching process of etching the entire surface of the substrate simultaneously by supplying an etching liquid so that the entire surface of the substrate is covered with a liquid film of the etching liquid while rotating the substrate, wherein one of the first and second process liquids used in the first etching process is the etching liquid, and the other is an etching inhibitor liquid that lowers an etching rate of the substrate surface by the etching liquid when mixed with the etching liquid.

公开(公告)号：US20210313171A1

公开(公告)日：2021-10-07

申请号：US17266672

申请日：2019-08-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Rintaro HIGUCHI ,  Tsunemoto OGATA ,  Mitsunori NAKAMORI

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  B08B3/02 ,  B08B7/00 ,  B08B7/04 ,  F26B3/02 ,  F26B3/28

Abstract: A substrate processing method for removing liquid on a substrate having an uneven pattern formed on a surface of the substrate and drying the substrate. The substrate processing method includes: forming a laminate having a two-layer structure including a first material in a solid state forming a lower layer and a second material in a solid state forming an upper layer, in a concave portion of the pattern; removing the second material from the concave portion by performing at least one of a heating process, a light-emitting process, and a reaction process using gas with respect to the second material to sublimate, decompose, and gas-react the second material; and removing the first material from the concave portion by performing at least one of the heating process, the light-emitting process, and the reaction process using gas with respect to the first material to sublimate, decompose, and gas-react the first material.