公开(公告)号：US20240192111A1

公开(公告)日：2024-06-13

申请号：US18552108

申请日：2022-03-22

Applicant: Tokyo Electron Limited

Inventor： Hiroshi MARUMOTO ,  Suguen LEE ,  Masashi ENOMOTO

IPC: G01N15/075 ,  G01N15/00 ,  H01L21/67

CPC classification number: G01N15/075 ,  G01N2015/0011 ,  H01L21/67075

Abstract: A substrate liquid-processing apparatus includes: a processing tank storing a processing liquid for liquid-processing of a substrate within an inside; an imager configured to acquire an image of the processing liquid of the inside of the processing tank; and an image processor comprising a bubble data acquisitor configured to perform image processing on the image and to acquire bubble data representing the state of bubbles in the processing liquid.

公开(公告)号：US20240304452A1

公开(公告)日：2024-09-12

申请号：US18701058

申请日：2022-10-12

Applicant: Tokyo Electron Limited

Inventor： Tsunemoto OGATA ,  Suguen LEE ,  Hiroshi MARUMOTO

IPC: H01L21/306 ,  H01L21/67

CPC classification number: H01L21/30604 ,  H01L21/6708

Abstract: A substrate processing method including a first etching process of performing etching, where a first process liquid paddle is formed on an entire surface of a substrate, by locally discharging a second process liquid from a nozzle toward a target area locally set on the substrate surface, such that an etching rate in the target area differs from that in other areas; and a second etching process of etching the entire surface of the substrate simultaneously by supplying an etching liquid so that the entire surface of the substrate is covered with a liquid film of the etching liquid while rotating the substrate, wherein one of the first and second process liquids used in the first etching process is the etching liquid, and the other is an etching inhibitor liquid that lowers an etching rate of the substrate surface by the etching liquid when mixed with the etching liquid.