公开(公告)号：US20240328033A1

公开(公告)日：2024-10-03

申请号：US18609525

申请日：2024-03-19

Applicant: Tokyo Electron Limited

Inventor： Tuhin Shuvra BASU ,  Hiroto FUJIKAWA ,  Keita KUMAGAI ,  Yoshihiro TAKEZAWA ,  Daisuke SUZUKI

IPC: C30B29/06

CPC classification number: C30B29/06

Abstract: A film forming method for forming a silicon film on a substrate, includes supplying a silane-based gas and a termination gas to the substrate during a period. The termination gas includes an element having an electronegativity lower than an electronegativity of hydrogen, and the supplying includes terminating a dangling bond of silicon in the silicon film with the element.