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    Depression Filling Method and Processing Apparatus
    2.
    发明申请
    Depression Filling Method and Processing Apparatus 有权
    抑郁填充方法及处理装置

    公开(公告)号：US20160240618A1

    公开(公告)日：2016-08-18

    申请号：US15041144

    申请日：2016-02-11

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Youichirou CHIBA ,  Takumi YAMADA ,  Daisuke SUZUKI

    IPC: H01L29/40 ,  H01L21/306 ,  H01L21/67 ,  H01L21/02

    CPC classification number: H01L29/401 ,  C30B25/00 ,  H01L21/223 ,  H01L21/32055 ,  H01L21/32135 ,  H01L21/32155 ,  H01L21/3247

    Abstract: A method of filling a depression of a workpiece is provided. The depression passes through an insulating film and extends up to an inside of a semiconductor substrate. The method includes forming a first thin film made of a semiconductor material along a wall surface which defines the depression, performing gas phase doping on the first thin film, by annealing the workpiece within a vessel, forming an epitaxial region from the semiconductor material of the first thin film along a surface of the semiconductor substrate which defines the depression, without moving the first thin film with the gas phase doping performed, forming a second thin film made of a semiconductor material along the wall surface which defines the depression; and by annealing the workpiece within the vessel, further forming an epitaxial region from the semiconductor material of the second thin film moved toward a bottom of the depression.

    Abstract translation: 提供了填充工件的凹陷的方法。 凹陷通过绝缘膜并延伸到半导体衬底的内部。 该方法包括沿着限定凹陷的壁表面形成由半导体材料制成的第一薄膜，通过在容器内退火工件，在第一薄膜上进行气相掺杂，从所述半导体材料形成外延区域 沿着所述半导体衬底的限定所述凹陷的表面的第一薄膜，而不进行气相掺杂而移动所述第一薄膜，沿着限定所述凹陷的所述壁表面形成由半导体材料制成的第二薄膜; 并且通过在容器内退火工件，进一步从第二薄膜的半导体材料形成外延区域，该半导体材料向凹陷部的底部移动。

    DEPRESSION FILLING METHOD AND PROCESSING APPARATUS
    3.
    发明申请
    DEPRESSION FILLING METHOD AND PROCESSING APPARATUS 有权
    泄漏填充方法和处理装置

    公开(公告)号：US20160240379A1

    公开(公告)日：2016-08-18

    申请号：US15018949

    申请日：2016-02-09

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Youichirou CHIBA ,  Hiroki IRIUDA ,  Daisuke SUZUKI

    IPC: H01L21/02 ,  C30B1/02 ,  H01L21/67

    CPC classification number: C30B1/023 ,  H01L21/2252 ,  H01L21/3247

    Abstract: A method of filling a depression of a workpiece is provided. The method includes forming a first thin film made of a semiconductor material substantially not containing an impurity along a wall surface which defines the depression, forming an epitaxial region conforming to crystals of the semiconductor substrate from the semiconductor material of the first thin film moved toward a bottom of the depression by annealing, etching the first thin film remaining on the wall surface, performing gas phase doping upon the epitaxial region, forming a second thin film made of a semiconductor material substantially not containing an impurity along the wall surface, further forming an epitaxial region from the semiconductor material of the second thin film moved toward the bottom of the depression by annealing, and performing gas phase doping upon the second thin film remaining on the wall surface and the epitaxial region.

    Abstract translation: 提供了填充工件的凹陷的方法。 该方法包括：形成由沿着限定凹陷的壁表面基本上不含有杂质的半导体材料制成的第一薄膜，从第一薄膜的半导体材料形成符合半导体衬底的晶体的外延区域， 通过退火蚀刻凹陷的底部，蚀刻保留在壁表面上的第一薄膜，对外延区进行气相掺杂，形成由沿着壁表面基本上不含杂质的半导体材料制成的第二薄膜，进一步形成 从第二薄膜的半导体材料的外延区域通过退火向凹陷的底部移动，并且对保留在壁表面和外延区域上的第二薄膜进行气相掺杂。

    Depression Filling Method and Processing Apparatus
    6.
    发明申请
    Depression Filling Method and Processing Apparatus 有权
    抑郁填充方法及处理装置

    公开(公告)号：US20150187643A1

    公开(公告)日：2015-07-02

    申请号：US14582243

    申请日：2014-12-24

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Akinobu KAKIMOTO ,  Youichirou CHIBA ,  Takumi YAMADA ,  Daisuke SUZUKI

    IPC: H01L21/768 ,  H01L21/67 ,  C30B25/16 ,  H01L21/285

    CPC classification number: H01L21/76877 ,  C30B1/023 ,  C30B25/00 ,  C30B29/06 ,  H01L21/02667 ,  H01L21/28525 ,  H01L21/28531 ,  H01L21/67109 ,  H01L21/76879

    Abstract: A depression filling method for filling a depression of a workpiece including a semiconductor substrate and an insulating film formed on the semiconductor substrate includes: forming an impurity-doped first semiconductor layer along a wall surface which defines the depression; forming, on the first semiconductor layer, a second semiconductor layer which is lower in impurity concentration than the first semiconductor layer and which is smaller in thickness than the first semiconductor layer; annealing the workpiece to form an epitaxial region at the bottom of the depression corresponding to crystals of the semiconductor substrate from the first semiconductor layer and the second semiconductor layer; and etching the first amorphous semiconductor region and the second amorphous semiconductor region.

    Abstract translation: 用于填充包括形成在半导体衬底上的半导体衬底和绝缘膜的工件的凹陷的凹陷填充方法包括：沿着限定凹陷的壁表面形成杂质掺杂的第一半导体层; 在所述第一半导体层上形成杂质浓度低于所述第一半导体层且厚度小于所述第一半导体层的第二半导体层; 对所述工件退火以在所述凹部的底部形成与所述第一半导体层和所述第二半导体层对应于所述半导体衬底的晶体的外延区域; 并蚀刻第一非晶半导体区域和第二非晶半导体区域。

    FILM FORMING METHOD AND FILM FORMING APPARATUS
    9.
    发明申请
    FILM FORMING METHOD AND FILM FORMING APPARATUS 有权

    公开(公告)号：US20210202248A1

    公开(公告)日：2021-07-01

    申请号：US17132656

    申请日：2020-12-23

    Applicant: Tokyo Electron Limited

    Inventor： Yoshihiro TAKEZAWA ,  Daisuke SUZUKI ,  Hiroyuki HAYASHI ,  Yutaka MOTOYAMA

    IPC: H01L21/02

    Abstract: A film forming method includes: forming a laminated film, in which an interface layer, a bulk layer, and a surface layer are laminated in this order, on a base; and crystallizing the laminated film, wherein the bulk layer is formed of a film that is easier to crystallize than the interface layer in crystallizing the laminated film, and wherein the surface layer is formed of a film that is easier to crystallize than the bulk layer in crystallizing the laminated film.

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