公开(公告)号：US10043637B2

公开(公告)日：2018-08-07

申请号：US15603648

申请日：2017-05-24

Applicant: Tokyo Electron Limited

Inventor： Yoshinori Suzuki ,  Akitoshi Harada

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a process chamber configured to accommodate a substrate such that a plasma process is performed in the process chamber; a pedestal on which the substrate is disposed; an opposite electrode opposite to the pedestal; a first radio-frequency power source configured to supply a first radio-frequency power for generating plasma on one of the pedestal and the opposite electrode; a second radio-frequency power source configured to supply a second radio-frequency power for generating a bias voltage on the pedestal, the second radio-frequency power being lower in frequency than the first radio-frequency power; a direct-current power source configured to supply a direct-current voltage to the opposite electrode; and a controller configured to control the first radio-frequency power source, the second radio-frequency power source, and the direct-current power source.

公开(公告)号：US11139161B2

公开(公告)日：2021-10-05

申请号：US16776774

申请日：2020-01-30

Applicant: Tokyo Electron Limited

Inventor： Hideki Mizuno ,  Yoshinori Suzuki

IPC: H01L21/311 ,  H01L21/02

Abstract: A method for processing substrates includes providing a first substrate including a first region and a second region, the first region including a stack of a silicon oxide film and a silicon nitride film, the second region including a single layer of a silicon oxide film; etching the first substrate with a process gas including a sulfur containing gas, in accordance with varied flow rates of the sulfur containing gas, thereby determining each relationship between a given flow rate from among the varied flow rates of the sulfur containing gas and a shape difference between respective recessed portions formed in the first region and the second region; determining a flow rate of the sulfur containing gas on a basis of each relationship; and etching a second substrate at the determined flow rate of the sulfur containing gas.