公开(公告)号：US10043637B2

公开(公告)日：2018-08-07

申请号：US15603648

申请日：2017-05-24

Applicant: Tokyo Electron Limited

Inventor： Yoshinori Suzuki ,  Akitoshi Harada

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a process chamber configured to accommodate a substrate such that a plasma process is performed in the process chamber; a pedestal on which the substrate is disposed; an opposite electrode opposite to the pedestal; a first radio-frequency power source configured to supply a first radio-frequency power for generating plasma on one of the pedestal and the opposite electrode; a second radio-frequency power source configured to supply a second radio-frequency power for generating a bias voltage on the pedestal, the second radio-frequency power being lower in frequency than the first radio-frequency power; a direct-current power source configured to supply a direct-current voltage to the opposite electrode; and a controller configured to control the first radio-frequency power source, the second radio-frequency power source, and the direct-current power source.

公开(公告)号：US10217616B2

公开(公告)日：2019-02-26

申请号：US14308970

申请日：2014-06-19

Applicant: Tokyo Electron Limited

Inventor： Akitoshi Harada

IPC: H01L21/302 ,  H01L21/461 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: A method of controlling a temperature is provided. In the method, a plasma process is performed in a processing chamber on an object to be processed placed on an electrostatic chuck configured to have its temperature adjustable. The electrostatic chuck is controlled to have a first temperature. The temperature of the electrostatic chuck is controlled in a step-by-step manner so as to change from the first temperature to a second temperature that is lower than the first temperature after performing the plasma process. An inside of the processing chamber is purged with an inactive gas after performing the plasma process.

公开(公告)号：US10192719B2

公开(公告)日：2019-01-29

申请号：US14962407

申请日：2015-12-08

Applicant: Tokyo Electron Limited

Inventor： Takamitsu Takayama ,  Akitoshi Harada ,  Hideaki Yakushiji

IPC: H01J37/32 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/302 ,  H01L21/461

Abstract: A plasma processing method is provided that includes a step of loading a substrate into a chamber where a plasma process is to be executed, a step of applying a high frequency bias power that has a lower frequency than a high frequency excitation power for plasma excitation to a mounting table on which the substrate is mounted, and a step of applying a DC voltage to an electrostatic chuck configured to electrostatically attract the substrate that is mounted on the mounting table. The step of applying the DC voltage is performed after the step of applying the high frequency bias power.

公开(公告)号：US09460896B2

公开(公告)日：2016-10-04

申请号：US14424217

申请日：2013-08-07

Applicant: Tokyo Electron Limited

Inventor： Akitoshi Harada

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/32 ,  C23F4/00

CPC classification number: H01J37/3244 ,  C23F4/00 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/31144

Abstract: A plasma processing method performs an etching process (S101) of supplying a first fluorine-containing gas into a plasma processing space and etching a target substrate with plasma of the first fluorine-containing gas. Then, the plasma processing method performs a carbon-containing material removal process (S102) of supplying an O2 gas into the plasma processing space and removing, with plasma of the O2 gas, a carbon-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process. Thereafter, the plasma processing method performs a titanium-containing material removal process (S103) of supplying a nitrogen-containing gas and a second fluorine-containing gas into the plasma processing space and removing, with plasma of the nitrogen-containing gas and the second fluorine-containing gas, the titanium-containing material deposited on the member after the etching process.

Abstract translation: 等离子体处理方法进行将第一含氟气体供应到等离子体处理空间中并用第一含氟气体的等离子体蚀刻目标衬底的蚀刻工艺（S101）。 然后，等离子体处理方法进行含氧材料的除去工序（S102），将O 2气体供给到等离子体处理空间中，并且利用O 2气体的等离子体除去沉积在构件上的含碳材料， 在蚀刻处理之后，表面布置成面对等离子体处理空间。 此后，等离子体处理方法进行含氮材料的除去工序（S103），将含氮气体和第二含氟气体供给到等离子体处理空间中，并且利用含氮气体的等离子体和第二 含氟气体，在蚀刻工艺之后沉积在构件上的含钛材料。

公开(公告)号：US20160315005A1

公开(公告)日：2016-10-27

申请号：US14931964

申请日：2015-11-04

Applicant: Tokyo Electron Limited

Inventor： Akitoshi Harada ,  Yen-Ting Lin ,  Chih-Hsuan Chen ,  Ju-Chia Hsieh ,  Shigeru Yoneda

IPC: H01L21/768 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/76805 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/2236 ,  H01L21/28518 ,  H01L21/31116 ,  H01L21/32053 ,  H01L21/321 ,  H01L21/67069 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76829 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/66575 ,  H01L29/78

Abstract: A plasma processing method performs an etching process of supplying a fluorine-containing gas into a plasma processing space and etching a target substrate, in which a silicon oxide film or a silicon nitride film is formed on a surface of a metal silicide film, with plasma of the fluorine-containing gas (process S101). Then, the plasma processing method performs a reduction process of supplying a hydrogen-containing gas into the plasma processing space and reducing, with plasma of the hydrogen-containing gas, a metal-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process (process S102). Thereafter, the plasma processing method performs a removal process of supplying an oxygen-containing gas into the plasma processing space and removing metal, which is obtained by reducing the metal-containing material in the reduction process, with plasma of the oxygen-containing gas (process S103).

Abstract translation: 等离子体处理方法进行将等离子体处理空间中的含氟气体供给到蚀刻在金属硅化物膜的表面上形成氧化硅膜或氮化硅膜的目标基板的蚀刻工序 的含氟气体（工序S101）。 然后，等离子体处理方法进行将含氢气体供给到等离子体处理空间中的还原过程，并且通过含氢气体的等离子体减少沉积在其上布置有表面的构件上的含金属材料 在蚀刻处理之后面对等离子体处理空间（处理S102）。 此后，等离子体处理方法进行将含氧气体供应到等离子体处理空间中并除去金属的去除工艺，该方法是通过在含氧气体的等离子体中还原还原过程中的含金属材料 处理S103）。

公开(公告)号：US09330891B2

公开(公告)日：2016-05-03

申请号：US14527536

申请日：2014-10-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryo Nonaka ,  Masanori Sato ,  Natsuki Yabumoto ,  Takamitsu Takayama ,  Akitoshi Harada ,  Junichi Sasaki ,  Hidetoshi Hanaoka

IPC: H01J37/32 ,  C23C4/12 ,  C23C14/34 ,  C23F4/00 ,  H01J37/34

CPC classification number: H01J37/32715 ,  H01J37/32477 ,  H01J37/34

Abstract: A plasma processing method of the present disclosure includes attaching a Si-containing material or a N-containing material to an electrostatic chuck that is provided in a processing container and attached with a reaction product containing C and F, in a state where a workpiece is not mounted on the electrostatic chuck; adsorbing the workpiece by the electrostatic chuck attached with the Si-containing material or the N-containing material when the workpiece is carried into the processing container; processing the workpiece with plasma; and separating the workpiece processed with plasma from the electrostatic chuck attached with the Si-containing material or the N-containing material.

Abstract translation: 本公开的等离子体处理方法包括将Si含有材料或含氮材料附着到设置在处理容器中的静电卡盘，并且在工件为工件的状态下附着有含有C和F的反应产物 未安装在静电吸盘上; 当工件被运送到处理容器中时，通过附着有含Si材料或含氮材料的静电卡盘吸附工件; 用等离子体加工工件; 以及将由等离子体处理的工件与附着有含Si材料或含氮材料的静电卡盘分离。

公开(公告)号：US09209041B2

公开(公告)日：2015-12-08

申请号：US14424497

申请日：2013-08-27

Applicant: Tokyo Electron Limited

Inventor： Akitoshi Harada ,  Yen-Ting Lin ,  Chih-Hsuan Chen ,  Ju-Chia Hsieh ,  Shigeru Yoneda

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  H01L21/67 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/321

CPC classification number: H01L21/76805 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/2236 ,  H01L21/28518 ,  H01L21/31116 ,  H01L21/32053 ,  H01L21/321 ,  H01L21/67069 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76829 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/66575 ,  H01L29/78

Abstract: A plasma processing method performs an etching process of supplying a fluorine-containing gas into a plasma processing space and etching a target substrate, in which a silicon oxide film or a silicon nitride film is formed on a surface of a nickel silicide film, with plasma of the fluorine-containing gas (process S101). Then, the plasma processing method performs a reduction process of supplying a hydrogen-containing gas into the plasma processing space and reducing, with plasma of the hydrogen-containing gas, a nickel-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process (process S102). Thereafter, the plasma processing method performs a removal process of supplying an oxygen-containing gas into the plasma processing space and removing nickel, which is obtained by reducing the nickel-containing material in the reduction process, with plasma of the oxygen-containing gas (process S103).

Abstract translation: 等离子体处理方法进行将含氟气体供给到等离子体处理空间中并蚀刻其中在硅化镍膜的表面上形成氧化硅膜或氮化硅膜的目标基板与等离子体的蚀刻工艺 的含氟气体（工序S101）。 然后，等离子体处理方法进行将含氢气体供给到等离子体处理空间中的还原处理，并且通过含氢气体的等离子体降低沉积在表面被布置的部件上的含镍材料 在蚀刻处理之后面对等离子体处理空间（处理S102）。 此后，等离子体处理方法进行将含氧气体供给到等离子体处理空间中的去除处理，并且通过在含氧气体的等离子体中还原还原工艺中的含镍材料来除去镍 处理S103）。

公开(公告)号：US09953862B2

公开(公告)日：2018-04-24

申请号：US14931964

申请日：2015-11-04

Applicant: Tokyo Electron Limited

Inventor： Akitoshi Harada ,  Yen-Ting Lin ,  Chih-Hsuan Chen ,  Ju-Chia Hsieh ,  Shigeru Yoneda

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/768 ,  H01L21/311 ,  H01J37/32 ,  H01L21/223 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/67 ,  H01L21/285

CPC classification number: H01L21/76805 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/2236 ,  H01L21/28518 ,  H01L21/31116 ,  H01L21/32053 ,  H01L21/321 ,  H01L21/67069 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76829 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/66575 ,  H01L29/78

Abstract: A plasma processing method performs an etching process of supplying a fluorine-containing gas into a plasma processing space and etching a target substrate, in which a silicon oxide film or a silicon nitride film is formed on a surface of a metal silicide film, with plasma of the fluorine-containing gas (process S101). Then, the plasma processing method performs a reduction process of supplying a hydrogen-containing gas into the plasma processing space and reducing, with plasma of the hydrogen-containing gas, a metal-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process (process S102). Thereafter, the plasma processing method performs a removal process of supplying an oxygen-containing gas into the plasma processing space and removing metal, which is obtained by reducing the metal-containing material in the reduction process, with plasma of the oxygen-containing gas (process S103).

公开(公告)号：US20150243489A1

公开(公告)日：2015-08-27

申请号：US14623765

申请日：2015-02-17

Applicant: Tokyo Electron Limited

Inventor： Hiroshi Uda ,  Hiroshi Tsujimoto ,  Akitoshi Harada ,  Hideaki Yakushiji ,  Masaharu Sugiyama

IPC: H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32862 ,  C23C16/4405 ,  H01L21/31116 ,  H01L21/31144

Abstract: A Ti-containing remaining in a chamber of a plasma processing apparatus can be simply and efficiently removed. In a Low-k film etching process, immediately after a dry etching process (process S2) is finished, a dry cleaning process is performed in the presence of a wafer while the wafer is held on an electrostatic chuck 40 (process S3). The dry cleaning process (process S3) is performed to mainly remove the Ti-containing reactant remaining in the chamber 10. To this end, a cleaning gas containing a H2 gas and a N2 gas is introduced into the chamber 10 from a processing gas supply unit 70 at a preset flow rate ratio. Then, a first high frequency power HF for plasma generation is applied to a susceptor 12 at a preset power level, so that plasma is generated within the chamber 10 by the high frequency discharge of the cleaning gas.

Abstract translation: 可以简单有效地除去留在等离子体处理装置的室中的含Ti。 在Low-k膜蚀刻工艺中，在干法蚀刻工艺（工艺S2）完成之后，在晶片保持在静电卡盘40上的情况下，在晶片存在下进行干法处理（工艺S3）。 进行干燥处理（工序S3），以主要除去残留在室10中的含Ti反应物。为此，将含有H 2气体和N 2气体的清洗气体从处理气体供给 单元70以预设的流量比率。 然后，用于等离子体产生的第一高频功率HF以预设的功率电平施加到基座12，使得通过清洁气体的高频放电在腔室10内产生等离子体。

公开(公告)号：US20150228458A1

公开(公告)日：2015-08-13

申请号：US14424217

申请日：2013-08-07

Applicant: Tokyo Electron Limited

Inventor： Akitoshi Harada

IPC: H01J37/32 ,  C23F4/00

CPC classification number: H01J37/3244 ,  C23F4/00 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/31144

Abstract: A plasma processing method performs an etching process (S101) of supplying a first fluorine-containing gas into a plasma processing space and etching a target substrate with plasma of the first fluorine-containing gas. Then, the plasma processing method performs a carbon-containing material removal process (S102) of supplying an O2 gas into the plasma processing space and removing, with plasma of the O2 gas, a carbon-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process. Thereafter, the plasma processing method performs a titanium-containing material removal process (S103) of supplying a nitrogen-containing gas and a second fluorine-containing gas into the plasma processing space and removing, with plasma of the nitrogen-containing gas and the second fluorine-containing gas, the titanium-containing material deposited on the member after the etching process.

Abstract translation: 等离子体处理方法进行将第一含氟气体供应到等离子体处理空间中并用第一含氟气体的等离子体蚀刻目标衬底的蚀刻工艺（S101）。 然后，等离子体处理方法进行含氧材料的除去工序（S102），将O 2气体供给到等离子体处理空间中，并且利用O 2气体的等离子体除去沉积在构件上的含碳材料， 在蚀刻处理之后，表面布置成面对等离子体处理空间。 此后，等离子体处理方法进行含氮材料的除去工序（S103），将含氮气体和第二含氟气体供给到等离子体处理空间中，并且利用含氮气体的等离子体和第二 含氟气体，在蚀刻工艺之后沉积在构件上的含钛材料。