公开(公告)号：US20250044704A1

公开(公告)日：2025-02-06

申请号：US18921159

申请日：2024-10-21

Applicant: Tokyo Electron Limited

Inventor： Yuichi ASAHI ,  Takuya SEINO

IPC: G03F7/00 ,  G03F7/16 ,  G03F7/20 ,  H01L21/67

Abstract: A substrate processing method includes: (A) applying a resist liquid on a substrate to form a resist film, (B) performing auxiliary exposure processing of irradiating the resist film with light having a desired wavelength, separately from exposure processing of transferring a pattern of a mask onto the resist film, (C) supplying a developer to the resist film after the exposure processing and the auxiliary exposure processing to form a resist pattern, (D) etching an etching target layer on the substrate using the resist pattern as a mask, and (E) correcting an in-plane distribution of an exposure amount in the auxiliary exposure processing in (B), and performing the correction based on a result of (D) when (A) to (D) are performed under conditions before the correction.