公开(公告)号：US20210066040A1

公开(公告)日：2021-03-04

申请号：US17009846

申请日：2020-09-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinji KUBOTA ,  Yuji AOTA ,  Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a first electrode on which a substrate is placed; a plasma generation source that generates plasma; a bias power supply that supplies bias power to the first electrode; a source power supply that supplies source power to the plasma generation source; and a controller. The controller performs a control such that a first state and a second state of the source power are alternately applied in synchronization with a high frequency cycle of the bias power, or a phase within one cycle of a reference electrical state indicating any one of a voltage, a current and an electromagnetic field measured in a power feed system of the bias power, and performs a control to turn OFF the source power at least at a negative side peak of the phase within one cycle of the reference electrical state.

公开(公告)号：US20220246400A1

公开(公告)日：2022-08-04

申请号：US17587189

申请日：2022-01-28

Applicant: Tokyo Electron Limited

Inventor： Koji YAMAGISHI ,  Yuji AOTA ,  Koichi NAGAMI ,  Kota ISHIHARADA

IPC: H01J37/32

Abstract: There is provided a radio frequency power filter circuit used in a plasma processing apparatus that includes an electrode and a feeding body connected to a center of a rear surface of the electrode and generates plasma by applying radio frequency power, the filter circuit including a series resonance circuit provided in a wiring line between a conductive member provided in the plasma processing apparatus and a power supply configured to supply DC power or power having a frequency of less than 400 kHz to the conductive member, and including a coil connected in series to the wiring line and a capacitor connected between the wiring line and a ground. A central axis of the coil and a central axis of the feeding body coincide with each other.