公开(公告)号：US20240290577A1

公开(公告)日：2024-08-29

申请号：US18660479

申请日：2024-05-10

Applicant: Tokyo Electron Limited

Inventor： Shinya ISHIKAWA ,  Shinya TAMONOKI ,  Naoki MATSUMOTO ,  Naoki MIHARA ,  Naoki FUJIWARA ,  Koichi NAGAMI ,  Nozomu NAGASHIMA ,  Hiroki ENDO

IPC: H01J37/32 ,  H02M1/15 ,  H02M7/219

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32155 ,  H02M1/15 ,  H02M7/219 ,  H01J2237/332 ,  H01J2237/334

Abstract: A substrate processing apparatus comprises a power storage part and at least one unit or member that uses a power. Charges stored in the power storage part are supplied, as a power, to the unit or the member.

公开(公告)号：US20190333739A1

公开(公告)日：2019-10-31

申请号：US16393261

申请日：2019-04-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koichi NAGAMI ,  Kazuya NAGASEKI

IPC: H01J37/32 ,  H01L21/3065

Abstract: An etching apparatus includes: a placement table serving as a lower electrode and configured to place a workpiece to be subjected to an etching processing thereon; a DC power supply configured to generate a negative DC voltage applied to the placement table; and a controller configured to: periodically apply a negative DC voltage to the placement table from the DC power supply when the etching processing on the workpiece placed on the placement table is initiated, and decrease a frequency of the negative DC voltage applied to the placement table with an elapse of processing time of the etching processing.

公开(公告)号：US20220246400A1

公开(公告)日：2022-08-04

申请号：US17587189

申请日：2022-01-28

Applicant: Tokyo Electron Limited

Inventor： Koji YAMAGISHI ,  Yuji AOTA ,  Koichi NAGAMI ,  Kota ISHIHARADA

IPC: H01J37/32

Abstract: There is provided a radio frequency power filter circuit used in a plasma processing apparatus that includes an electrode and a feeding body connected to a center of a rear surface of the electrode and generates plasma by applying radio frequency power, the filter circuit including a series resonance circuit provided in a wiring line between a conductive member provided in the plasma processing apparatus and a power supply configured to supply DC power or power having a frequency of less than 400 kHz to the conductive member, and including a coil connected in series to the wiring line and a capacitor connected between the wiring line and a ground. A central axis of the coil and a central axis of the feeding body coincide with each other.

公开(公告)号：US20210159049A1

公开(公告)日：2021-05-27

申请号：US17102444

申请日：2020-11-24

Applicant: Tokyo Electron Limited

Inventor： Shinji KUBOTA ,  Kazuya NAGASEKI ,  Shinji HIMORI ,  Koichi NAGAMI

IPC: H01J37/32

Abstract: A disclosed plasma processing method includes generating plasma in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source in a first period. The plasma processing method further includes stopping supply of the radio frequency power from the radio frequency power source in a second period following the first period. The plasma processing method further includes applying a negative direct-current voltage from a bias power source to a substrate support in a third period following the second period. In the third period, the radio frequency power is not supplied. In the third period, the negative direct-current voltage is set to generate ions in a chamber by secondary electrons that are emitted by causing ions in the chamber to collide with a substrate.

公开(公告)号：US20200266036A1

公开(公告)日：2020-08-20

申请号：US16790028

申请日：2020-02-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke AOKI ,  Fumiya TAKATA ,  Toshikatsu TOBANA ,  Shinya MORIKITA ,  Kazunobu FUJIWARA ,  Jun ABE ,  Koichi NAGAMI

IPC: H01J37/32 ,  B08B5/00

Abstract: An apparatus for plasma processing is configured to generate plasma in a chamber and periodically apply a pulsed negative DC voltage to an upper electrode from a DC power supply in the plasma processing on a substrate and in plasma cleaning. A duty ratio of the pulsed negative DC voltage used for the plasma processing is smaller than a duty ratio of the pulsed negative DC voltage used for the plasma cleaning. An absolute value of an average value of an output voltage of the DC power supply used for the plasma processing is smaller than an absolute value of an average value of the output voltage of the DC power supply used for the plasma cleaning.

公开(公告)号：US20220384154A1

公开(公告)日：2022-12-01

申请号：US17804027

申请日：2022-05-25

Applicant: Tokyo Electron Limited

Inventor： Yusuke HAYASAKA ,  Atsushi SASAKI ,  Kazuya MATSUMOTO ,  Shingo TAKAHASHI ,  Koichi NAGAMI

IPC: H01J37/32

Abstract: In a disclosed plasma processing apparatus, an electrostatic chuck provided in a chamber includes a first region on which a substrate is placed and a second region on which an edge ring is placed. The first region includes a first electrode provided therein. The second region including a second electrode provided therein. A first feed line connects the first electrode and a bias power supply generating a pulse of a voltage applied to the first electrode to each other. A second feed line connects the second electrode and the bias power supply or another bias power supply generating a pulse of the voltage applied to the second electrode to each other. The second feed line includes one or more sockets and one or more feed pins. The one or more feed pins have flexibility in a radial direction thereof and are fitted into the one or more sockets.

公开(公告)号：US20220301825A1

公开(公告)日：2022-09-22

申请号：US17834948

申请日：2022-06-08

Applicant: Tokyo Electron Limited

Inventor： Shinji KUBOTA ,  Kazuya NAGASEKI ,  Shinji HIMORI ,  Koichi NAGAMI

IPC: H01J37/32

Abstract: A disclosed plasma processing method includes generating plasma in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source in a first period. The plasma processing method further includes stopping supply of the radio frequency power from the radio frequency power source in a second period following the first period. The plasma processing method further includes applying a negative direct-current voltage from a bias power source to a substrate support in a third period following the second period. In the third period, the radio frequency power is not supplied. In the third period, the negative direct-current voltage is set to generate ions in a chamber by secondary electrons that are emitted by causing ions in the chamber to collide with a substrate.

公开(公告)号：US20210343503A1

公开(公告)日：2021-11-04

申请号：US17243596

申请日：2021-04-29

Applicant: Tokyo Electron Limited

Inventor： Natsumi TORII ,  Koichi NAGAMI ,  Noriiki MASUDA ,  Takayuki SUZUKI

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01L21/3065

Abstract: An apparatus for etching a substrate includes a chamber, a substrate support, a radio frequency (RF) power supply, and a RF filter. The substrate support is disposed in the chamber. The substrate support has an electrode, an electrostatic chuck disposed on the electrode, and a conductive edge ring disposed to surround the substrate placed on the electrostatic chuck. The RF power supply is configured to supply RF power to generate plasma from a gas inside the chamber. The RF filter has a variable impedance. The edge ring and the RF filter are electrically directly connected through a connecting unit.

公开(公告)号：US20210043472A1

公开(公告)日：2021-02-11

申请号：US16978193

申请日：2019-07-17

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Shinji KUBOTA ,  Koji MARUYAMA ,  Takashi DOKAN ,  Koichi NAGAMI

IPC: H01L21/67 ,  H01J37/32

Abstract: A control method of a plasma processing apparatus including a first electrode and a second electrode includes supplying a bias power to the first electrode, and supplying a negative DC voltage to the second electrode. The negative DC voltage periodically repeats a first state that takes a first voltage value and a second state that takes a second voltage value having an absolute value smaller than the first voltage value. The control method further includes a first control process of applying the first state of the negative DC voltage in a partial time period within each cycle of a signal synchronized with a cycle of a radio frequency of the bias power, or in a partial time period within each cycle of a periodically varying parameter measured in a transmission path of the bias power, and applying the second state continuously with the first state.

公开(公告)号：US20160247666A1

公开(公告)日：2016-08-25

申请号：US15018981

申请日：2016-02-09

Applicant: Tokyo Electron Limited

Inventor： Masafumi URAKAWA ,  Koichi NAGAMI

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32174 ,  H01J37/32568 ,  H01J37/32715

Abstract: A plasma processing method includes applying a pulse wave of high frequency electric power for plasma generation and a pulse wave of high frequency electric power for bias whose frequency is lower than that of the high frequency electric power for plasma generation on the mounting table; and controlling the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias such that a predetermined phase difference is generated between the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias, and a duty ratio of the high frequency electric power for plasma generation becomes greater than or equal to a duty ratio of the high frequency electric power for bias.

Abstract translation: 一种等离子体处理方法，包括对等离子体产生用的高频电力脉冲波和频率低于用于等离子体产生的高频电力的偏压的高频电力脉冲波施加在安装台上; 并且控制用于等离子体产生的高频电力的脉冲波和用于偏置的高频电力的脉搏波，使得在用于等离子体产生的高频电力的脉冲波和脉冲之间产生预定的相位差 用于偏置的高频电力的波形和用于等离子体产生的高频电力的占空比变得大于或等于用于偏置的高频电力的占空比。