公开(公告)号：US20210305057A1

公开(公告)日：2021-09-30

申请号：US17190651

申请日：2021-03-03

申请人： Tokyo Electron Limited

发明人： Kota ISHIHARADA ,  Fumiya TAKATA ,  Toshikatsu TOBANA ,  Shinya MORIKITA

IPC分类号： H01L21/311 ,  H01L21/67 ,  H01J37/32

摘要： An etching method includes: (a) providing, on a support, a substrate having the first region covering the second region and the second region defining a recess receiving the first region, (b) etching the first region until or immediately before the second region is exposed, (c) exposing the substrate to plasma generated from a first process gas containing C and F atoms using a first RF signal and forming a deposit on the substrate, (d) exposing the deposit to plasma generated from a second process gas containing an inert gas using a first RF signal and selectively etching the first region to the second region, and (e) repeating (c) and (d). (c) includes using the RF signal with a frequency of 60 to 300 MHz and/or setting the support to 100 to 200° C. to control a ratio of C to F atoms in the deposit to greater than 1.

公开(公告)号：US20240212987A1

公开(公告)日：2024-06-27

申请号：US18433862

申请日：2024-02-06

申请人： Tokyo Electron Limited

发明人： Atsushi SAWACHI ,  Kota ISHIHARADA ,  Hideaki YAKUSHIJI ,  Yoshiyasu SATO ,  Shinya MORIKITA ,  Shota YOSHIMURA ,  Toshihiro TSURUTA ,  Kazuaki TAKAAI

IPC分类号： H01J37/32 ,  H01L21/67

CPC分类号： H01J37/32449 ,  H01J37/32834 ,  H01L21/67017 ,  H01J2237/334

摘要： A gas supply system includes: gas supply flow paths for independently supplying gas to a processing chamber; a flow rate controller arranged in each gas supply flow path; a primary-side valve arranged on an upstream side of the flow rate controller; a primary-side gas exhaust flow path branched between the primary-side valve and the flow rate controller; a primary-side exhaust valve arranged in the primary-side gas exhaust flow path; a secondary-side valve arranged on a downstream side of the flow rate controller; a secondary-side gas exhaust flow path branched between the secondary-side valve and the flow rate controller; and a secondary-side exhaust valve arranged in the secondary-side gas exhaust flow path. The flow rate controller includes: a control valve connected to the primary-side valve and the secondary-side valve; and a control-side orifice arranged between the control valve and the secondary-side valve.

公开(公告)号：US20220246400A1

公开(公告)日：2022-08-04

申请号：US17587189

申请日：2022-01-28

申请人： Tokyo Electron Limited

发明人： Koji YAMAGISHI ,  Yuji AOTA ,  Koichi NAGAMI ,  Kota ISHIHARADA

IPC分类号： H01J37/32

摘要： There is provided a radio frequency power filter circuit used in a plasma processing apparatus that includes an electrode and a feeding body connected to a center of a rear surface of the electrode and generates plasma by applying radio frequency power, the filter circuit including a series resonance circuit provided in a wiring line between a conductive member provided in the plasma processing apparatus and a power supply configured to supply DC power or power having a frequency of less than 400 kHz to the conductive member, and including a coil connected in series to the wiring line and a capacitor connected between the wiring line and a ground. A central axis of the coil and a central axis of the feeding body coincide with each other.