公开(公告)号：US07140321B2

公开(公告)日：2006-11-28

申请号：US10725403

申请日：2003-12-03

申请人： Tomio Nakayama ,  Hirohisa Oda ,  Hitoshi Ishihama ,  Kazumichi Kuramochi ,  Junya Takahashi

发明人： Tomio Nakayama ,  Hirohisa Oda ,  Hitoshi Ishihama ,  Kazumichi Kuramochi ,  Junya Takahashi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J7/24 ,  H05B31/26

CPC分类号： H01J37/32522 ,  H01J37/32192

摘要： A plasma processing apparatus includes a vacuum chamber that accommodates an object to be processed, and provides a plasma process to the object in a vacuum or reduced pressure environment, a dielectric for transmitting microwaves to the vacuum chamber and for maintaining the vacuum or reduced environment of the vacuum chamber, a plate that has slots for guiding the microwaves to the dielectric, and a temperature control mechanism that has a cooling channel between the plate and the dielectric, and controls temperature of the dielectric.

摘要翻译： 等离子体处理装置包括容纳被处理物体的真空室，并且在真空或减压环境中向物体提供等离子体处理，用于将微波传输到真空室并用于保持真空或减少环境的电介质 真空室，具有用于将微波引导到电介质的槽的板，以及在板和电介质之间具有冷却通道并控制电介质的温度的温度控制机构。