ORGANIC FIELD EFFECT TRANSISTOR AND ITS PRODUCTION METHOD
    1.
    发明申请
    ORGANIC FIELD EFFECT TRANSISTOR AND ITS PRODUCTION METHOD 有权
    有机场效应晶体及其生产方法

    公开(公告)号:US20100051927A1

    公开(公告)日:2010-03-04

    申请号:US12551205

    申请日:2009-08-31

    IPC分类号: H01L51/30 H01L51/40

    摘要: An organic field effect transistor (OFET) having a structure of a conductor layer/an insulator layer/a semiconductor layer is provided. This OFET comprises an insulator layer formed by mixing a polymer compound produced by polymerizing or copolymerizing a monomer represented by the formula (1): CH2═CHCOO—(CH2)2—CN   (1) and/or a monomer represented by the formula (2): CH2═C(CH3)COO—(CH2)2—CN   (2) with a polymerizable and/or crosslinkable organic compound other than the monomer represented by the formula (1) or (2); and a semiconductor layer comprising an organic compound.

    摘要翻译: 提供具有导体层/绝缘体层/半导体层的结构的有机场效应晶体管(OFET)。 该OFET包括通过将由式(1)表示的单体:CH2 = CHCOO-(CH2)2-CN(1)表示的单体和/或由式(1)表示的单体 2):CH 2 = C(CH 3)COO-(CH 2)2 -CN(2)与除式(1)或(2)表示的单体之外的可聚合和/或可交联的有机化合物; 以及包含有机化合物的半导体层。

    Thin-layer chemical transistor and making method
    2.
    发明申请
    Thin-layer chemical transistor and making method 有权
    薄层化学晶体管及制作方法

    公开(公告)号:US20060043432A1

    公开(公告)日:2006-03-02

    申请号:US11199152

    申请日:2005-08-09

    IPC分类号: H01L23/58

    摘要: In a thin-layer chemical transistor having a metal/solid electrolyte/semiconductor structure, the materials of which the solid electrolyte and semiconductor layers are made comprise organic solvent-soluble compounds. The transistor can be fabricated solely by solvent processes, typically printing techniques including ink jet printing.

    摘要翻译: 在具有金属/固体电解质/半导体结构的薄层化学晶体管中,制备固体电解质和半导体层的材料包括有机溶剂可溶性化合物。 晶体管可以仅通过溶剂工艺制造,通常是印刷技术,包括喷墨印刷。

    Ambipolar organic thin-film field-effect transistor and making method
    3.
    发明申请
    Ambipolar organic thin-film field-effect transistor and making method 有权
    双极有机薄膜场效应晶体管及制作方法

    公开(公告)号:US20070281412A1

    公开(公告)日:2007-12-06

    申请号:US11882434

    申请日:2007-08-01

    IPC分类号: H01L21/336

    摘要: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.

    摘要翻译: 在具有金属/绝缘体/半导体(MIS)结构的薄膜场效应晶体管中,半导体层由有机化合物形成,并且绝缘体层由可溶于有机溶剂的有机化合物形成并显示出自发的 极化与铁电材料相似。 当通过施加不小于矫顽电场的电压并且不超过源极和栅电极之间的耐受电压进行轮询并且没有轮询时,晶体管呈现n型晶体管特性,晶体管表现出p型晶体管特性 。

    Organic field effect transistor and making method
    4.
    发明授权
    Organic field effect transistor and making method 有权
    有机场效应晶体管及制作方法

    公开(公告)号:US08304761B2

    公开(公告)日:2012-11-06

    申请号:US12054693

    申请日:2008-03-25

    IPC分类号: H01L51/00

    CPC分类号: H01L51/052 C09D133/18

    摘要: In an organic field effect transistor with an electrical conductor-insulator-semiconductor structure, the semiconductor layer is made of an organic compound, and the insulator layer is made of a polymer obtained through polymerization or copolymerization of 2-cyanoethyl acrylate and/or 2-cyanoethyl methacrylate.

    摘要翻译: 在具有电导体 - 绝缘体 - 半导体结构的有机场效应晶体管中,半导体层由有机化合物制成,并且绝缘体层由通过2-氰基乙基丙烯酸酯和/或2-丙烯酸酯的聚合或共聚获得的聚合物制成, 甲基丙烯酸氰乙酯。

    Organic field effect transistor and its production method
    5.
    发明授权
    Organic field effect transistor and its production method 有权
    有机场效应晶体管及其制作方法

    公开(公告)号:US08288762B2

    公开(公告)日:2012-10-16

    申请号:US12551205

    申请日:2009-08-31

    IPC分类号: H01L35/24

    摘要: An organic field effect transistor (OFET) having a structure of a conductor layer/an insulator layer/a semiconductor layer is provided. This OFET comprises an insulator layer formed by mixing a polymer compound produced by polymerizing or copolymerizing a monomer represented by the formula (1): CH2═CHCOO—(CH2)2—CN  (1) and/or a monomer represented by the formula (2): CH2═C(CH3)COO—(CH2)2—CN  (2) with a polymerizable and/or crosslinkable organic compound other than the monomer represented by the formula (1) or (2); and a semiconductor layer comprising an organic compound.

    摘要翻译: 提供具有导体层/绝缘体层/半导体层的结构的有机场效应晶体管(OFET)。 该OFET包括通过将由式(1)表示的单体:CH2 = CHCOO-(CH2)2-CN(1)表示的单体和/或由式(1)表示的单体 2):CH 2 = C(CH 3)COO-(CH 2)2 -CN(2)与除式(1)或(2)表示的单体之外的可聚合和/或可交联的有机化合物; 以及包含有机化合物的半导体层。

    Field effect transistor and making method
    7.
    发明授权
    Field effect transistor and making method 有权
    场效应晶体管及制作方法

    公开(公告)号:US07557392B2

    公开(公告)日:2009-07-07

    申请号:US11199152

    申请日:2005-08-09

    IPC分类号: H01L35/24 H01L51/00

    摘要: In a thin-layer chemical transistor having a metal/solid electrolyte/semiconductor structure, the materials of which the solid electrolyte and semiconductor layers are made comprise organic solvent-soluble compounds. The transistor can be fabricated solely by solvent processes, typically printing techniques including ink jet printing.

    摘要翻译: 在具有金属/固体电解质/半导体结构的薄层化学晶体管中,制备固体电解质和半导体层的材料包括有机溶剂可溶性化合物。 晶体管可以仅通过溶剂工艺制造,通常是印刷技术,包括喷墨印刷。

    Ambipolar organic thin-film field-effect transistor and making method
    8.
    发明授权
    Ambipolar organic thin-film field-effect transistor and making method 有权
    双极有机薄膜场效应晶体管及制作方法

    公开(公告)号:US07507613B2

    公开(公告)日:2009-03-24

    申请号:US11882434

    申请日:2007-08-01

    IPC分类号: H01L21/00 H01L21/84

    摘要: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.

    摘要翻译: 在具有金属/绝缘体/半导体(MIS)结构的薄膜场效应晶体管中,半导体层由有机化合物形成,并且绝缘体层由可溶于有机溶剂的有机化合物形成并显示出自发的 极化与铁电材料相似。 当通过施加不小于矫顽电场的电压并且不超过源极和栅电极之间的耐受电压进行轮询并且没有轮询时,晶体管呈现n型晶体管特性,晶体管表现出p型晶体管特性 。