公开(公告)号：US20120037903A1

公开(公告)日：2012-02-16

申请号：US13282557

申请日：2011-10-27

申请人： Tomokazu YOKOI ,  Yujiro SAKURADA

发明人： Tomokazu YOKOI ,  Yujiro SAKURADA

IPC分类号： H01L29/04

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L29/66772

摘要： A non-single-crystal semiconductor layer is formed over a substrate, and then a single crystal semiconductor layer is formed over part of the non-single-crystal semiconductor layer. Thus, a semiconductor element of a region which requires a large area (e.g. a pixel region in a display device) can be formed using the non-single-crystal semiconductor layer, and a semiconductor element of a region which requires high speed operation (e.g. a driver circuit region in a display device) can be formed using the single crystal semiconductor layer.

摘要翻译： 在衬底上形成非单晶半导体层，然后在非单晶半导体层的一部分上形成单晶半导体层。 因此，可以使用非单晶半导体层和需要高速操作的区域的半导体元件（例如，在显示装置中的像素区域）上形成需要大面积的区域的半导体元件（例如，显示装置中的像素区域） 可以使用单晶半导体层形成显示装置中的驱动电路区域）。

公开(公告)号：US20130023108A1

公开(公告)日：2013-01-24

申请号：US13551677

申请日：2012-07-18

申请人： Kazuya HANAOKA ,  Yujiro SAKURADA ,  Hideki TSUYA ,  Makoto FURUNO ,  Miku FUJITA

发明人： Kazuya HANAOKA ,  Yujiro SAKURADA ,  Hideki TSUYA ,  Makoto FURUNO ,  Miku FUJITA

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02238 ,  H01L21/02255

摘要： An insulating layer is formed on a surface of a semiconductor wafer which is to be a bond substrate and an embrittlement region is formed in the semiconductor wafer by irradiation with accelerated ions. Then, a base substrate and the semiconductor wafer are attached to each other. After that, the semiconductor wafer is divided at the embrittlement region by performing heat treatment and an SOI substrate including a semiconductor layer over the base substrate with the insulating layer interposed therebetween is formed. Before the SOI substrate is formed, heat treatment is performed on the semiconductor wafer at a temperature of higher than or equal to 1100° C. under a non-oxidizing atmosphere in which the concentration of impurities is reduced. In this manner, the planarity of the film formed on the semiconductor wafer when heat treatment is performed can be improved.

摘要翻译： 在作为接合衬底的半导体晶片的表面上形成绝缘层，并且通过照射加速离子在半导体晶片中形成脆化区域。 然后，将基底基板和半导体晶片相互连接。 之后，通过进行热处理，将半导体晶片分割在脆化区域，并且形成包含半导体层的SOI基板，并且在基底基板上插入绝缘层。 在形成SOI衬底之前，在杂质浓度降低的非氧化气氛下，在高于或等于1100℃的温度下对半导体晶片进行热处理。 以这种方式，可以提高在进行热处理时在半导体晶片上形成的膜的平面度。