公开(公告)号：US08367517B2

公开(公告)日：2013-02-05

申请号：US13011355

申请日：2011-01-21

申请人： Kazuya Hanaoka ,  Hideki Tsuya ,  Yoshihiro Komatsu

发明人： Kazuya Hanaoka ,  Hideki Tsuya ,  Yoshihiro Komatsu

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/02032 ,  H01L21/3225 ,  H01L22/12 ,  H01L22/20

摘要： An insulating layer is formed over a surface of a semiconductor wafer to be the bond substrate and irradiation with accelerated ions is performed, so that an embrittlement region is formed inside the wafer. Next, this semiconductor wafer and a base substrate such as a glass substrate or a semiconductor wafer are attached to each other. Then, the semiconductor wafer is divided at the embrittlement region by heat treatment, whereby an SOI substrate is manufactured in which a semiconductor layer is provided over the base substrate with the insulating layer interposed therebetween. Before this SOI substrate is manufactured, heat treatment is performed on the semiconductor wafer at 1100° C. or higher under a non-oxidizing atmosphere such as an argon gas atmosphere or a mixed atmosphere of an oxygen gas and a nitrogen gas.

摘要翻译： 在作为接合衬底的半导体晶片的表面上形成绝缘层，并且执行加速离子的照射，从而在晶片内形成脆化区域。 接下来，将该半导体晶片和诸如玻璃基板或半导体晶片的基底基板彼此附接。 然后，通过热处理将半导体晶片分割在脆化区域，由此制造SOI衬底，其中半导体层设置在基底衬底上，绝缘层置于其之间。 在制造该SOI衬底之前，在诸如氩气气氛或氧气和氮气的混合气氛的非氧化性气氛下，在1100℃以上对半导体晶片进行热处理。

公开(公告)号：US20130023108A1

公开(公告)日：2013-01-24

申请号：US13551677

申请日：2012-07-18

申请人： Kazuya HANAOKA ,  Yujiro SAKURADA ,  Hideki TSUYA ,  Makoto FURUNO ,  Miku FUJITA

发明人： Kazuya HANAOKA ,  Yujiro SAKURADA ,  Hideki TSUYA ,  Makoto FURUNO ,  Miku FUJITA

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02238 ,  H01L21/02255

摘要： An insulating layer is formed on a surface of a semiconductor wafer which is to be a bond substrate and an embrittlement region is formed in the semiconductor wafer by irradiation with accelerated ions. Then, a base substrate and the semiconductor wafer are attached to each other. After that, the semiconductor wafer is divided at the embrittlement region by performing heat treatment and an SOI substrate including a semiconductor layer over the base substrate with the insulating layer interposed therebetween is formed. Before the SOI substrate is formed, heat treatment is performed on the semiconductor wafer at a temperature of higher than or equal to 1100° C. under a non-oxidizing atmosphere in which the concentration of impurities is reduced. In this manner, the planarity of the film formed on the semiconductor wafer when heat treatment is performed can be improved.

摘要翻译： 在作为接合衬底的半导体晶片的表面上形成绝缘层，并且通过照射加速离子在半导体晶片中形成脆化区域。 然后，将基底基板和半导体晶片相互连接。 之后，通过进行热处理，将半导体晶片分割在脆化区域，并且形成包含半导体层的SOI基板，并且在基底基板上插入绝缘层。 在形成SOI衬底之前，在杂质浓度降低的非氧化气氛下，在高于或等于1100℃的温度下对半导体晶片进行热处理。 以这种方式，可以提高在进行热处理时在半导体晶片上形成的膜的平面度。

公开(公告)号：US20120208348A1

公开(公告)日：2012-08-16

申请号：US13454114

申请日：2012-04-24

申请人： Kazuya HANAOKA ,  Hideki TSUYA ,  Masaharu NAGAI

发明人： Kazuya HANAOKA ,  Hideki TSUYA ,  Masaharu NAGAI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： The method of one embodiment of the present invention includes: a first step of irradiating a bond substrate with ions to form an embrittlement region in the bond substrate; a second step of bonding the bond substrate to a base substrate with an insulating layer therebetween; a third step of splitting the bond substrate at the embrittlement region to form a semiconductor layer over the base substrate with the insulating layer therebetween; and a fourth step of subjecting the bond substrate split at the embrittlement region to a first heat treatment in an argon atmosphere and then a second heat treatment in an atmosphere of a mixture of oxygen and nitrogen to form a reprocessed bond substrate. The reprocessed bond substrate is used again as a bond substrate in the first step.

摘要翻译： 本发明的一个实施方案的方法包括：第一步骤，用离子照射键合衬底，以在接合衬底中形成脆化区; 将所述接合衬底粘合到其上具有绝缘层的基底衬底的第二步骤; 在所述脆化区域分割所述键合衬底以在所述基底衬底上形成半导体层并在其间具有绝缘层的第三步骤; 以及第四步骤，将在脆化区域分裂的键合衬底在氩气氛中进行第一次热处理，然后在氧和氮的混合气氛中进行第二次热处理，以形成再加工的接合衬底。 在第一步中再次使用再处理的键合衬底作为键合衬底。

公开(公告)号：US07360964B2

公开(公告)日：2008-04-22

申请号：US10930902

申请日：2004-09-01

申请人： Hideki Tsuya ,  Naoki Hirose

发明人： Hideki Tsuya ,  Naoki Hirose

IPC分类号： F16B11/00

CPC分类号： F16B5/0642 ,  B60R13/02 ,  B60R13/0206 ,  F16B5/0664 ,  Y10T24/303 ,  Y10T403/49 ,  Y10T403/4924 ,  Y10T403/4949 ,  Y10T403/60

摘要： A joint structure is for joining a pair of connecting members to each other. One of the connecting members has a lock portion formed so as to protrude from the member, and the other connecting member is provided with a receiving portion into which the lock portion is insertable. The lock portion is inserted into the receiving portion while at least one of the lock and receiving portions is being resiliently flexed. Thereafter, the lock or receiving portion is restored to its initial shape. As a result, the lock and receiving portions are joined to each other. The lock and receiving portions are abutted against each other such that at least one of the lock and receiving portions deforms the other into engagement with one another. As a result, this deformation limits relative movement between the lock and receiving portions.

摘要翻译： 接合结构用于将一对连接构件彼此连接。 连接构件中的一个具有形成为从构件突出的锁定部分，另一个连接构件设置有可插入锁定部分的容纳部分。 锁定部分被插入到接收部分中，同时锁定和接收部分中的至少一个正在弹性弯曲。 此后，锁或接收部分恢复到其初始形状。 结果，锁定和接收部分彼此接合。 锁和接收部分彼此抵靠，使得锁和接收部分中的至少一个使另一个变形成彼此接合。 结果，这种变形限制了锁和接收部分之间的相对运动。

公开(公告)号：US08168481B2

公开(公告)日：2012-05-01

申请号：US12762675

申请日：2010-04-19

申请人： Kazuya Hanaoka ,  Hideki Tsuya ,  Masaharu Nagai

发明人： Kazuya Hanaoka ,  Hideki Tsuya ,  Masaharu Nagai

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254

摘要： The method of one embodiment of the present invention includes: a first step of irradiating a bond substrate with ions to form an embrittlement region in the bond substrate; a second step of bonding the bond substrate to a base substrate with an insulating layer therebetween; a third step of splitting the bond substrate at the embrittlement region to form a semiconductor layer over the base substrate with the insulating layer therebetween; and a fourth step of subjecting the bond substrate split at the embrittlement region to a first heat treatment in an argon atmosphere and then a second heat treatment in an atmosphere of a mixture of oxygen and nitrogen to form a reprocessed bond substrate. The reprocessed bond substrate is used again as a bond substrate in the first step.

摘要翻译： 本发明的一个实施方案的方法包括：第一步骤，用离子照射键合衬底，以在接合衬底中形成脆化区; 将所述接合衬底粘合到其上具有绝缘层的基底衬底的第二步骤; 在所述脆化区域分割所述键合衬底以在所述基底衬底上形成半导体层并在其间具有绝缘层的第三步骤; 以及第四步骤，将在脆化区域分裂的键合衬底在氩气氛中进行第一次热处理，然后在氧和氮的混合气氛中进行第二次热处理，以形成再加工的接合衬底。 在第一步中再次使用再处理的键合衬底作为键合衬底。

公开(公告)号：US20050054229A1

公开(公告)日：2005-03-10

申请号：US10930902

申请日：2004-09-01

申请人： Hideki Tsuya ,  Naoki Hirose

发明人： Hideki Tsuya ,  Naoki Hirose

IPC分类号： F16B5/07 ,  B29C65/56 ,  B60R13/02 ,  F16B5/06 ,  F16B5/10 ,  F16B5/00

CPC分类号： F16B5/0642 ,  B60R13/02 ,  B60R13/0206 ,  F16B5/0664 ,  Y10T24/303 ,  Y10T403/49 ,  Y10T403/4924 ,  Y10T403/4949 ,  Y10T403/60

摘要： A joint structure for joining a pair of connecting members to each other is disclosed. One of the connecting members has a lock portion formed so as to protrude from the member and the other connecting member is provided with a receiving portion into which the lock portion is insertable. The lock portion is inserted into the receiving portion while at least one of the lock and receiving portions is being resiliently flexed. Thereafter, the lock or receiving portion is restored to their initial shape. As a result, the lock and receiving portions are joined to each other. The lock and receiving portions are abutted against each other such that at least one of the lock and receiving portions deforms the other into engagement with one another. As a result, the deformation limits the relative movement between the lock and receiving portions.

摘要翻译： 公开了用于将一对连接构件彼此连接的接合结构。 连接构件中的一个具有形成为从构件突出的锁定部分，另一个连接构件设置有可插入锁定部分的容纳部分。 锁定部分被插入到接收部分中，同时锁定和接收部分中的至少一个正在弹性弯曲。 此后，锁或接收部分恢复到其初始形状。 结果，锁定和接收部分彼此接合。 锁和接收部分彼此抵靠，使得锁和接收部分中的至少一个使另一个变形成彼此接合。 结果，变形限制了锁和接收部分之间的相对运动。

公开(公告)号：US20100273310A1

公开(公告)日：2010-10-28

申请号：US12762675

申请日：2010-04-19

申请人： Kazuya HANAOKA ,  Hideki TSUYA ,  Masaharu NAGAI

发明人： Kazuya HANAOKA ,  Hideki TSUYA ,  Masaharu NAGAI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： The method of one embodiment of the present invention includes: a first step of irradiating a bond substrate with ions to form an embrittlement region in the bond substrate; a second step of bonding the bond substrate to a base substrate with an insulating layer therebetween; a third step of splitting the bond substrate at the embrittlement region to form a semiconductor layer over the base substrate with the insulating layer therebetween; and a fourth step of subjecting the bond substrate split at the embrittlement region to a first heat treatment in an argon atmosphere and then a second heat treatment in an atmosphere of a mixture of oxygen and nitrogen to form a reprocessed bond substrate. The reprocessed bond substrate is used again as a bond substrate in the first step.

摘要翻译： 本发明的一个实施方案的方法包括：第一步骤，用离子照射键合衬底，以在接合衬底中形成脆化区; 将所述接合衬底粘合到其上具有绝缘层的基底衬底的第二步骤; 在所述脆化区域分割所述键合衬底以在所述基底衬底上形成半导体层并在其间具有绝缘层的第三步骤; 以及第四步骤，将在脆化区域分裂的键合衬底在氩气氛中进行第一次热处理，然后在氧和氮的混合气氛中进行第二次热处理，以形成再加工的接合衬底。 在第一步中再次使用再处理的键合衬底作为键合衬底。

公开(公告)号：US08486772B2

公开(公告)日：2013-07-16

申请号：US13454114

申请日：2012-04-24

申请人： Kazuya Hanaoka ,  Hideki Tsuya ,  Masaharu Nagai

发明人： Kazuya Hanaoka ,  Hideki Tsuya ,  Masaharu Nagai

IPC分类号： H01L21/00 ,  H01L21/46 ,  H01L21/20 ,  H01L21/461

CPC分类号： H01L21/76254

摘要： The method of one embodiment of the present invention includes: a first step of irradiating a bond substrate with ions to form an embrittlement region in the bond substrate; a second step of bonding the bond substrate to a base substrate with an insulating layer therebetween; a third step of splitting the bond substrate at the embrittlement region to form a semiconductor layer over the base substrate with the insulating layer therebetween; and a fourth step of subjecting the bond substrate split at the embrittlement region to a first heat treatment in an argon atmosphere and then a second heat treatment in an atmosphere of a mixture of oxygen and nitrogen to form a reprocessed bond substrate. The reprocessed bond substrate is used again as a bond substrate in the first step.

摘要翻译： 本发明的一个实施方案的方法包括：第一步骤，用离子照射键合衬底，以在接合衬底中形成脆化区; 将所述接合衬底粘合到其上具有绝缘层的基底衬底的第二步骤; 在所述脆化区域分割所述键合衬底以在所述基底衬底上形成半导体层并在其间具有绝缘层的第三步骤; 以及第四步骤，将在脆化区域分裂的键合衬底在氩气氛中进行第一次热处理，然后在氧和氮的混合气氛中进行第二次热处理，以形成再加工的接合衬底。 在第一步中再次使用再加工的键合衬底作为键合衬底。

公开(公告)号：US20110183445A1

公开(公告)日：2011-07-28

申请号：US13011355

申请日：2011-01-21

申请人： Kazuya HANAOKA ,  Hideki TSUYA ,  Yoshihiro KOMATSU

发明人： Kazuya HANAOKA ,  Hideki TSUYA ,  Yoshihiro KOMATSU

IPC分类号： H01L21/66 ,  H01L21/78

CPC分类号： H01L21/76254 ,  H01L21/02032 ,  H01L21/3225 ,  H01L22/12 ,  H01L22/20

摘要： An insulating layer is formed over a surface of a semiconductor wafer to be the bond substrate and irradiation with accelerated ions is performed, so that an embrittlement region is formed inside the wafer. Next, this semiconductor wafer and a base substrate such as a glass substrate or a semiconductor wafer are attached to each other. Then, the semiconductor wafer is divided at the embrittlement region by heat treatment, whereby an SOI substrate is manufactured in which a semiconductor layer is provided over the base substrate with the insulating layer interposed therebetween. Before this SOI substrate is manufactured, heat treatment is performed on the semiconductor wafer at 1100° C. or higher under a non-oxidizing atmosphere such as an argon gas atmosphere or a mixed atmosphere of an oxygen gas and a nitrogen gas.

摘要翻译： 在作为接合衬底的半导体晶片的表面上形成绝缘层，并且执行加速离子的照射，从而在晶片内形成脆化区域。 接下来，将该半导体晶片和诸如玻璃基板或半导体晶片的基底基板彼此附接。 然后，通过热处理将半导体晶片分割在脆化区域，由此制造SOI衬底，其中半导体层设置在基底衬底上，绝缘层置于其之间。 在制造该SOI衬底之前，在诸如氩气气氛或氧气和氮气的混合气氛的非氧化性气氛下，在1100℃以上对半导体晶片进行热处理。

公开(公告)号：US07126194B2

公开(公告)日：2006-10-24

申请号：US10703583

申请日：2003-11-10

申请人： Seigo Kishino ,  Hideki Tsuya

发明人： Seigo Kishino ,  Hideki Tsuya

IPC分类号： H01L27/12

CPC分类号： H01L23/26 ,  H01L21/3226 ,  H01L21/7624 ,  H01L2924/0002 ,  Y10S257/913 ,  H01L2924/00

摘要： On a silicon layer of an SOI wafer is defined a semiconductor device-forming region to form semiconductor devices thereon and an insulating region to electrically insulate the semiconductor device-forming region. Then, a mask layer is formed of nitride by means of photolithography so as to cover the semiconductor device-forming region. Then, an impurities-removing layer is formed by means of well known technique so as to cover the mask layer and embed the gaps between the adjacent masks of the mask layer. The impurities of the silicon layer of the SOI wafer are absorbed and removed by the distorted layer, the grain boundaries and the lattice defects of the impurities-removing layer.

摘要翻译： 在SOI晶片的硅层上限定了半导体器件形成区域以在其上形成半导体器件和绝缘区域以使半导体器件形成区域电绝缘。 然后，通过光刻法由氮化物形成掩模层，以覆盖半导体器件形成区域。 然后，通过公知的技术形成杂质去除层，以便覆盖掩模层并将掩模层的相邻掩模之间的间隙嵌入。 SOI晶片的硅层的杂质被杂质去除层的失真层，晶界和晶格缺陷吸收除去。