摘要:
Disclosed is an electrophotographic photoreceptor comprising a conductive support and provided thereon an intermediate layer, a carrier generation layer containing a carrier generation material and a carrier transportation layer containing a carrier transportation material, wherein said carrier generation layer contains a first perylene compound represented by Formula A and a second perylene compound represented by Formula B as said carrier generation material: ##STR1## wherein Z represents a substituted or unsubstituted divalent aromatic hydrocarbon group or a substituted or unsubstituted divalent heterocyclic group; and R represents an alkyl group, an aralkyl group, a hydroxyalkyl group, an alkoxyalkyl group, an aromatic hydrocarbon group or a heterocyclic group; ##STR2##
摘要:
Disclosed is an image forming method using an electrophotographic photoreceptor comprising the steps of:(1) charging the electrophotographic photoreceptor, wherein said electrophotographic photoreceptor comprising a conductive support and provided thereon, a carrier generation layer and a carrier transportation layer, said carrier generation layer comprising a carrier generation material represented by formula 1 or 2 and having X-ray diffraction pattern having peaks at 6.3.degree..+-.0.2.degree., 12.4.degree..+-.0.2.degree., 25.3.degree..+-.0.2.degree. and 27.1.degree..+-.0.2.degree. in Bragg angle (2.theta.) when using Cu-K.alpha. ray as a X-ray radiation source in which said peak of 12.4.degree..+-.0.2.degree. has a maximum intensity and has a half width of 0.65.degree. or more; no peak being present at 11.5.degree..+-.0.2.degree.,(2) imagewise exposing the charged photoreceptor for an exposure time of 1.times.10.sup.-4 to 3.times.10.sup.-2 seconds,(3) developing the imagewise exposed photoreceptor to form an image, and(4) transferring the formed image to an image receiving material: ##STR1##
摘要:
Disclosed is an electrophotographic photoreceptor contains a carrier generation material represented by Formula 1 or 2 having peaks at 2.theta.=6.3.degree., 12.4.degree., 25.3.degree. and 27.1.degree. in the Bragg angle (2.theta..+-.0.2.degree.) as measured by X-ray diffraction under radiation of Cu-K.alpha. rays; said peak of 12.4.degree. has a maximum intensity and has a half width of 0.65.degree. or more; no peak being present at 11.5.degree.; anda carrier transportation material selected from the group consisting of the following Formulas 3, 4, 5 and 6; ##STR1## wherein Z represents an atomic group necessary to form a substituted or unsubstituted heterocyclic ring; ##STR2##
摘要:
An electrophotographic photoreceptor is disclosed. The photoreceptor has an interlayer between an electroconductive substrate and a photosensitive layer wherein the interlayer contains a particle and has a light absorbance of not more than 0.25 per micrometer of thickness at a wavelength of 1,000 nm. An image forming apparatus and a processing cartridge employing the photoreceptor are also disclosed.
摘要:
An electrophotographic photoreceptor to be used in an image forming apparatus having a charge providing means by contacting a charging member to an electrophotographic photoreceptor is disclosed. The photoreceptor has at least an interlayer, a charge generation layer and a charge transfer layer each provided on an electroconductive substrate, and the interlayer has a thickness of from 5 to 25 μm and the charge transfer layer has a thickness of from 5 to 20 μm. An image forming apparatus, image forming method and cartridge for the method are also disclosed.
摘要:
An electrophotographic photoreceptor to be used in an image forming apparatus having a charge providing means by contacting a charging member to an electrophotographic photoreceptor is disclosed. The photoreceptor has at least an interlayer, a charge generation layer and a charge transfer layer each provided on an electroconductive substrate, and the interlayer has a thickness of from 5 to 25 μm and the charge transfer layer has a thickness of from 5 to 20 μm. An image forming apparatus, image forming method and cartridge for the method are also disclosed.
摘要:
An electrophotographic photoreceptor having an interlayer between an electroconductive support and a photoreceptive layer, wherein the interlayer contains an N-type semiconductive particle and a binder and a Benard cell is formed in the interlayer.
摘要:
An electrophotographic photoreceptor is disclosed. The topmost layer comprises a binder comprising a crosslinked resin having, as a recurring unit, (a) a portion comprising a constituent having a fluorine or silicon atom at the side chain, (b) a portion having an aromatic group in the main or side chain, and (c) a portion having a hydroxyl group or an amino group.
摘要:
An electrophotographic photoreceptor is disclosed, comprising on an electrically conductive support an intermediate layer, a charge generation layer and a charge transport layer in this order, wherein the charge transport layer contains a charge transport material represented by formula (1) and a compound represented by formula (2) and the content of the compound represented by formula (2) is not less than 100 ppm and not more than 5000 ppm.
摘要:
An electrophotographic photoreceptor having an interlayer and a photosensitive layer on an electroconductive substrate, wherein the interlayer comprises any one of 1) an N-type semiconductive particle containing at least one of transition metals having an atomic number of 21 to 30, 39, 41 to 48 and 57 to 80, the total amount of the transition metals having an atomic number of 21 to 30, 39, 41 to 48 and 57 to 80 being from 100 ppm to 2.0% by mass, or 2) a metal oxide particle containing a silicon atom in a bond energy spectrum by the X-ray photoelectron spectroscopy at a ratio represented by the following Formula (1): Formula (1) 0.02≦Si/M≦0.55 Si: a peak intensity of a silicon atom among the bond energy spectrum, and M: a peak intensity of a metal atom among the bond energy spectrum.
摘要翻译:一种在导电性基体上具有中间层和感光层的电子照相感光体,其中,所述中间层包含以下中的任一种:1)含有至少一种过渡金属的N型半导体颗粒,所述过渡金属的原子序数为21〜30,39,41〜 48和57〜80,原子序数为21〜30,39,41〜48,57〜80的过渡金属的总量为100〜2.0质量%,或2)含有 通过X射线光电子能谱以下式(1)表示的比例的键能谱中的硅原子:式(1)0.02 <= Si / M <= 0.55 Si:硅原子的峰强度 键能谱,M:键能谱中金属原子的峰强度。