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1.
公开(公告)号:US20080268289A1
公开(公告)日:2008-10-30
申请号:US12150165
申请日:2008-04-25
申请人: Tomoo Yamamoto , Joe Inagaki , Takuya Kojima , Das Sarbanoo
发明人: Tomoo Yamamoto , Joe Inagaki , Takuya Kojima , Das Sarbanoo
CPC分类号: G11B5/8404 , C23C14/205 , G11B5/65 , G11B5/66 , G11B5/732 , G11B5/7325 , G11B5/851
摘要: Embodiments of the present invention provide a perpendicular magnetic recording medium with less medium noise, excellent overwrite characteristics, and scratch resistance. According to one embodiment, when an Ar gas with addition of a micro-amount of oxygen is used upon forming an upper Ru intermediate layer, a micro-structure of a magnetic layer formed thereon can be formed in a state where no magnetic oxide region is segregated and the magnetic crystal grains are isolated. In this case, a gas pressure for forming the upper intermediate layer is set to 5 Pa or more and 12 Pa or less which is a region much higher compared with 0.5 Pa or more and 1 Pa for the lower Ru intermediate layer. Since writing by a head becomes difficult remarkably in the perpendicular magnetic medium having magnetic crystal grains promoted for isolation, a second magnetic layer for facilitating magnetization reversal by lowering the oxide concentration and somewhat strengthening coupling between particles only in the magnetic layer on the side of the surface is formed to a layer above the first magnetic layer as a main part.
摘要翻译: 本发明的实施例提供了具有较少中等噪声,优异的重写特性和耐擦伤性的垂直磁记录介质。 根据一个实施方案,当形成上Ru中间层时使用添加微量氧的Ar气体时,可以在不形成氧化物区域的状态下形成其上形成的磁性层的微结构 分离,磁性晶粒分离。 在这种情况下,用于形成上部中间层的气体压力被设定为5Pa以上且12Pa以下,与下述Ru中间层的0.5Pa以上且1Pa相比,区域高得多。 由于在具有促进隔离的磁性晶粒的垂直磁性介质中,头部的写入变得困难,所以通过降低氧化物浓度促进磁化反转的第二磁性层和仅仅在 表面形成为第一磁性层上方的层作为主要部分。
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2.
公开(公告)号:US08647755B2
公开(公告)日:2014-02-11
申请号:US12150165
申请日:2008-04-25
申请人: Tomoo Yamamoto , Joe Inagaki , Takuya Kojima , Das Sarbanoo
发明人: Tomoo Yamamoto , Joe Inagaki , Takuya Kojima , Das Sarbanoo
IPC分类号: G11B5/66
CPC分类号: G11B5/8404 , C23C14/205 , G11B5/65 , G11B5/66 , G11B5/732 , G11B5/7325 , G11B5/851
摘要: Embodiments of the present invention provide a perpendicular magnetic recording medium with less medium noise, excellent overwrite characteristics, and scratch resistance. According to one embodiment, when an Ar gas with addition of a micro-amount of oxygen is used upon forming an upper Ru intermediate layer, a micro-structure of a magnetic layer formed thereon can be formed in a state where no magnetic oxide region is segregated and the magnetic crystal grains are isolated. In this case, a gas pressure for forming the upper intermediate layer is set to 5 Pa or more and 12 Pa or less which is a region much higher compared with 0.5 Pa or more and 1 Pa for the lower Ru intermediate layer. Since writing by a head becomes difficult remarkably in the perpendicular magnetic medium having magnetic crystal grains promoted for isolation, a second magnetic layer for facilitating magnetization reversal by lowering the oxide concentration and somewhat strengthening coupling between particles only in the magnetic layer on the side of the surface is formed to a layer above the first magnetic layer as a main part.
摘要翻译: 本发明的实施例提供了具有较少中等噪声,优异的重写特性和耐擦伤性的垂直磁记录介质。 根据一个实施方案,当形成上Ru中间层时使用添加微量氧的Ar气体时,可以在不形成氧化物区域的状态下形成其上形成的磁性层的微结构 分离,磁性晶粒分离。 在这种情况下,用于形成上部中间层的气体压力被设定为5Pa以上且12Pa以下,与下述Ru中间层的0.5Pa以上且1Pa相比,区域高得多。 由于在具有促进隔离的磁性晶粒的垂直磁性介质中,头部的写入变得困难,所以通过降低氧化物浓度促进磁化反转的第二磁性层和仅仅在 表面形成为第一磁性层上方的层作为主要部分。
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公开(公告)号:US08431255B2
公开(公告)日:2013-04-30
申请号:US12317534
申请日:2008-12-24
申请人: Das Sarbanoo , Hiroyuki Suzuki , Takayoshi Ohtsu
发明人: Das Sarbanoo , Hiroyuki Suzuki , Takayoshi Ohtsu
CPC分类号: G11B5/374 , G01R33/07 , G11C11/18 , H01F10/137 , H01L43/06 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1171
摘要: Embodiments of the present invention relate to a galvanomagnetic device for use as a magnetic sensor or magnetic memory device. In a particular embodiment, the galvanomagnetic device comprises a non-conductive substrate, a first magnetic layer having a magnetic anisotropy perpendicular to the surface thereof, and a ferromagnetic second magnetic layer formed on the first magnetic layer. On the second magnetic layer, current electrodes are disposed to pass a current between two points, and voltage electrodes are disposed to detect a Hall voltage between two points perpendicularly to the current flow direction.
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公开(公告)号:US20090176129A1
公开(公告)日:2009-07-09
申请号:US12317534
申请日:2008-12-24
申请人: Das Sarbanoo , Hiroyuki Suzuki , Takayoshi Ohtsu
发明人: Das Sarbanoo , Hiroyuki Suzuki , Takayoshi Ohtsu
IPC分类号: G11B5/39
CPC分类号: G11B5/374 , G01R33/07 , G11C11/18 , H01F10/137 , H01L43/06 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1171
摘要: Embodiments of the present invention relate to a galvanomagnetic device for use as a magnetic sensor or magnetic memory device. In a particular embodiment, the galvanomagnetic device comprises a non-conductive substrate, a first magnetic layer having a magnetic anisotropy perpendicular to the surface thereof, and a ferromagnetic second magnetic layer formed on the first magnetic layer. On the second magnetic layer, current electrodes are disposed to pass a current between two points, and voltage electrodes are disposed to detect a Hall voltage between two points perpendicularly to the current flow direction.
摘要翻译: 本发明的实施例涉及一种用作磁传感器或磁存储器件的电流磁装置。 在特定实施例中,电流磁性器件包括非导电衬底,具有垂直于其表面的磁各向异性的第一磁性层和形成在第一磁性层上的铁磁性第二磁性层。 在第二磁性层上设置电流电极以在两点之间通过电流,并且设置电压电极以检测垂直于当前流动方向的两个点之间的霍尔电压。
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