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1.发明授权Magnetoresistive sensor having a quantum well structure and a P-doped trapping layer to prevent surface charge carriers from migrating to the quantum well structure 有权具有量子阱结构和P掺杂俘获层的磁阻传感器，以防止表面电荷载流子迁移到量子阱结构公开(公告)号：US08274763B2
公开(公告)日：2012-09-25
申请号：US13420474
申请日：2012-03-14
Applicant: Bruce Alvin Gurney , Ernesto E. Marinero
Inventor： Bruce Alvin Gurney , Ernesto E. Marinero
IPC: G11B5/39
CPC classification number: G11B5/374
Abstract: A Lorentz Magnetoresistive sensor having an ultrathin trapping layer disposed between a quantum well structure and a surface of the sensor. The trapping layer prevents charge carriers from the surface of the sensor from affecting the quantum well structure. This allows the quantum well structure to be formed much closer to the surface of the sensor, and therefore, much closer to the magnetic field source, greatly improving sensor performance. A Lorentz Magnetoresistive sensor having a top gate electrode to hinder surface charge carriers diffusing into the quantum well, said top gate electrode being either a highly conductive ultrathin patterned metal layer or a patterned monoatomic layer of graphene.
Abstract translation: 洛伦兹磁阻传感器，其具有设置在量子阱结构和传感器表面之间的超薄捕获层。 捕获层防止传感器表面的电荷载体影响量子阱结构。 这允许量子阱结构形成得更接近传感器的表面，因此更接近于磁场源，大大提高了传感器的性能。 一种洛伦兹磁阻传感器，其具有顶部栅极以阻止表面电荷载流子扩散到量子阱中，所述顶部栅电极是高度导电的超薄图案化的金属层或图案化的石墨烯单原子层。
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2.发明申请公开(公告)号：US20120176705A1
公开(公告)日：2012-07-12
申请号：US13420474
申请日：2012-03-14
Applicant: Bruce Alvin Gurney , Ernesto E. Marinero
Inventor： Bruce Alvin Gurney , Ernesto E. Marinero
IPC: G11B5/127
CPC classification number: G11B5/374
Abstract: A Lorentz Magnetoresistive sensor having an ultrathin trapping layer disposed between a quantum well structure and a surface of the sensor. The trapping layer prevents charge carriers from the surface of the sensor from affecting the quantum well structure. This allows the quantum well structure to be formed much closer to the surface of the sensor, and therefore, much closer to the magnetic field source, greatly improving sensor performance. A Lorentz Magnetoresistive sensor having a top gate electrode to hinder surface charge carriers diffusing into the quantum well, said top gate electrode being either a highly conductive ultrathin patterned metal layer or a patterned monoatomic layer of graphene.
Abstract translation: 洛伦兹磁阻传感器，其具有设置在量子阱结构和传感器表面之间的超薄捕获层。 捕获层防止传感器表面的电荷载体影响量子阱结构。 这允许量子阱结构形成得更接近传感器的表面，因此更接近于磁场源，大大提高了传感器的性能。 一种洛伦兹磁阻传感器，其具有顶部栅极以阻止表面电荷载流子扩散到量子阱中，所述顶部栅电极是高度导电的超薄图案化的金属层或图案化的石墨烯单原子层。
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公开(公告)号：US5488250A
公开(公告)日：1996-01-30
申请号：US252479
申请日：1994-06-01
Applicant: Falke Hennig
Inventor： Falke Hennig
CPC classification number: H01L29/82 , G11B5/37 , G11B5/374 , G11C11/18 , H01L29/685
Abstract: A semiconductor structure is disclosed in which two regions of semiconductor material positioned adjacent to each other have different electron mobilities. By application of a magnetic field to the device, a Hall voltage is created across the boundary region between the regions of semiconductor material to modify their resistance. By detecting the change in resistance, the device can function as a memory cell, a programmable logic device, a head for hard disk drives, a measurement tool for measuring magnetic fields, or other apparatus.
Abstract translation: 公开了半导体结构，其中彼此相邻布置的两个半导体材料区域具有不同的电子迁移率。 通过对器件施加磁场，跨越半导体材料的区域之间的边界区域产生霍尔电压，以改变其电阻。 通过检测电阻的变化，该装置可用作存储单元，可编程逻辑器件，硬盘驱动器头，用于测量磁场的测量工具或其他设备。
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公开(公告)号：US5436779A
公开(公告)日：1995-07-25
申请号：US220486
申请日：1994-03-31
Applicant: Erich P. Valstyn
Inventor： Erich P. Valstyn
CPC classification number: G11B5/3967 , G11B5/332 , G11B5/374 , G11B5/245
Abstract: A thin film read-write magnetic head includes first and second adjacent magnetic layers forming a magnetic circuit path with a transducing gap, a flux sensing element disposed in the plane of one of the magnetic layers, at least one magnetic shunt valve member disposed around the flux sensing element, the valve member being disposed in the same plane as the one of the magnetic layers in which the sensing element is disposed. A conductor is electrically connected to the flux sensing member and magnetically coupled to the shunt valve member to apply a magnetic field to the shunt valve member to magnetically control the shunt valve member.
Abstract translation: 薄膜读写磁头包括形成具有换能间隙的磁路路径的第一和第二相邻磁性层，设置在一个磁层的平面中的磁通感测元件，至少一个磁分流阀构件 磁通感测元件，阀构件设置在与设置感测元件的磁性层中的一个相同的平面中。 导体电连接到磁通感测构件并且磁耦合到分流阀构件，以将磁场施加到分流阀构件以磁控制分流阀构件。
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公开(公告)号：US4828966A
公开(公告)日：1989-05-09
申请号：US128947
申请日：1987-12-04
Applicant: Michael Mallary , Christine Bisagni , Shu-Huei Liu
Inventor： Michael Mallary , Christine Bisagni , Shu-Huei Liu
CPC classification number: H01L43/14 , G11B5/3163 , G11B5/374 , G11B5/376
Abstract: A method of forming a Hall effect sensor for a magnetic recording head including the steps of providing a single crystal substrate having a chemically dissimilar single crystal film thereon, providing a ceramic substrate having a first magnetic pole piece of a selected thickness formed on a surface thereof, positioning the single crystal substrate and the ceramic substrate with the single crystal film and magnetic pole piece surfaces in an opposing relationship, bonding the positioned ceramic substrate to the single crystal film on the positioned single crystal substrate to form a laminated structure having a substantially thin uniform bond line, removing chemically the single crystal substrate from the single crystal film, forming a Hall effect pattern in the film while one surface of the film is exposed, and depositing a second magnetic pole piece on the formed Hall effect pattern.
Abstract translation: 一种形成用于磁记录头的霍尔效应传感器的方法，包括以下步骤：在其上提供具有化学不相似的单晶膜的单晶衬底，提供陶瓷衬底，该陶瓷衬底具有形成在其表面上的所选厚度的第一磁极片 以相对的关系将单晶基板和陶瓷基板与单晶膜和磁极片表面对置，将定位的陶瓷基板与定位的单晶基板上的单晶膜接合，形成基本上薄的层叠结构 均匀粘合线，从单晶膜化学地除去单晶衬底，在膜的一个表面暴露时在膜中形成霍尔效应图案，并在形成的霍尔效应图案上沉积第二磁极片。
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Patent Agency Ranking
公开(公告)号：US09947347B1
公开(公告)日：2018-04-17
申请号：US15385595
申请日：2016-12-20
Applicant: Western Digital Technologies, Inc.
Inventor： Petrus Antonius Van Der Heijden , Quang Le , Kuok San Ho , Xiaoyong Liu , Gonçalo Marcos Baião De Albuquerque
CPC classification number: G11B5/372 , G01R33/075 , G11B5/1278 , G11B5/332 , G11B5/374 , H01J43/06
Abstract: A magnetic sensor that generates a signal based on inverse spin Hall effect. The sensor includes a magnetic free layer and a non-magnetic, electrically conductive spin Hall layer located adjacent to the magnetic free layer. Circuitry is configured to supply an electrical current that travels through the magnetic free layer and the spin Hall layer in a direction that is generally perpendicular to the plane of the layers or perpendicular to a plane defined by an interface between the magnetic free layer and the spin Hall layer. The inverse spin Hall effect causes an electrical voltage in the spin Hall layer as a result of the current, and the voltage changes relative to the orientation of magnetization of the magnetic free layer. Circuitry is provided for measuring the voltage in the spin Hall layer in a direction that is generally perpendicular to the direction of the electrical current.
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7.发明授权Magnetic stabilization and scissor design for anomalous hall effect magnetic read sensor 有权用于异常霍尔效应磁读取传感器的磁稳定和剪刀设计公开(公告)号：US09293160B1
公开(公告)日：2016-03-22
申请号：US14616621
申请日：2015-02-06
Applicant: HGST Netherlands B.V.
Inventor： Goran Mihajlovic , Neil Smith
IPC: G11B5/37
Abstract: A system comprising a sensor with a free layer that exhibits an anomalous Hall effect is disclosed. Further, the sensor has a magnetic underlayer below the free layer in a track direction for biasing a magnetic orientation of the free layer in a first magnetic orientation, and a magnetic overlayer above the free layer in the track direction for biasing the magnetic orientation of the free layer in the first magnetic orientation. Still further, the sensor has a lower nonmagnetic spacer layer between the magnetic underlayer and the free layer, and an upper nonmagnetic spacer layer between the magnetic overlayer and the free layer.
Abstract translation: 公开了一种包括具有表现出异常霍尔效应的自由层的传感器的系统。 此外，传感器在轨道方向上具有在自由层下方的磁性底层，用于在第一磁性取向上偏置自由层的磁性取向，以及在轨道方向上的自由层上方的磁性覆盖层，用于偏置磁性取向 自由层在第一磁方向。 此外，传感器在磁性底层和自由层之间具有较低的非磁性间隔层，以及在磁性覆盖层和自由层之间的上部非磁性间隔层。
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公开(公告)号：US20150070800A1
公开(公告)日：2015-03-12
申请号：US14022282
申请日：2013-09-10
Applicant: Seagate Technology LLC
Inventor： Dimitar Velikov Dimitrov , Dian Song , Mark Thomas Kief , Amit Sharma
IPC: G11B5/31
CPC classification number: G11B5/3909 , G11B5/374 , G11B5/3929 , G11B5/398 , G11B2005/3996
Abstract: A data reader may be configured at least with detector and injector stacks that each has a common spin accumulation layer. The detector stack may positioned on an air bearing surface (ABS) while the injector stack is positioned distal the ABS. The injector stack can have a diffusive layer with a larger spin diffusion length than mean free path.
Abstract translation: 数据读取器可以至少配置有每个具有公共自旋累积层的检测器和注射器堆叠。 检测器堆可以位于空气轴承表面（ABS）上，同时喷射器堆叠位于ABS的远侧。 注射器堆叠可以具有比平均自由程更大的自旋扩散长度的扩散层。
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公开(公告)号：US08431255B2
公开(公告)日：2013-04-30
申请号：US12317534
申请日：2008-12-24
Applicant: Das Sarbanoo , Hiroyuki Suzuki , Takayoshi Ohtsu
Inventor： Das Sarbanoo , Hiroyuki Suzuki , Takayoshi Ohtsu
CPC classification number: G11B5/374 , G01R33/07 , G11C11/18 , H01F10/137 , H01L43/06 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1171
Abstract: Embodiments of the present invention relate to a galvanomagnetic device for use as a magnetic sensor or magnetic memory device. In a particular embodiment, the galvanomagnetic device comprises a non-conductive substrate, a first magnetic layer having a magnetic anisotropy perpendicular to the surface thereof, and a ferromagnetic second magnetic layer formed on the first magnetic layer. On the second magnetic layer, current electrodes are disposed to pass a current between two points, and voltage electrodes are disposed to detect a Hall voltage between two points perpendicularly to the current flow direction.
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10.发明授权Magnetic sensor, magnetic head, and magnetic memory by using spin Hall devices 有权磁性传感器，磁头和磁记忆体采用旋转霍尔器件公开(公告)号：US08295006B2
公开(公告)日：2012-10-23
申请号：US12314769
申请日：2008-12-16
Applicant: Ryoko Sugano , Masahiko Ichimura , Hiromasa Takahashi
Inventor： Ryoko Sugano , Masahiko Ichimura , Hiromasa Takahashi
CPC classification number: G11B5/374 , G01R33/1284 , G11B5/378 , G11C11/161 , G11C11/18 , Y10T428/1107
Abstract: A magnetic sensor reduces thermal fluctuation and realizes high-sensitive signal detection using a spin Hall device of a simple structure configured with only one magnetic layer. The magnetic sensor includes a stacked film in which a nonmagnetic spin Hall layer, a nonmagnetic insulator layer, and a magnetic layer are stacked, an electrode nonmagnetic terminal pair connected to a side surface of the nonmagnetic spin Hall layer, and a unit applying a current in a film thickness direction of the stacked film. A thickness of the nonmagnetic spin Hall layer is thinner than twice a spin diffusion length of a material constituting the nonmagnetic spin Hall layer. A magnetization direction of the magnetic layer magnetized by an external magnetic field is detected due to the polarity of a voltage across both ends of the electrode nonmagnetic terminal pair.
Abstract translation: 磁传感器减少热波动，并使用仅配置有一个磁性层的简单结构的旋转霍尔器件来实现高灵敏度信号检测。 磁传感器包括层叠非磁性旋转霍尔层，非磁性绝缘体层和磁性层的叠层膜，与非磁性旋转霍尔层的侧面连接的电极非磁性端子对，以及施加电流的单元 在层叠膜的膜厚度方向上。 非磁性旋转霍尔层的厚度比构成非磁性旋转霍尔层的材料的自旋扩散长度的两倍更薄。 由于电极非磁性端子对的两端的电压的极性，检测由外部磁场磁化的磁性层的磁化方向。
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