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    Detergent for lithography and method of forming resist pattern with the same
    7.
    发明授权
    Detergent for lithography and method of forming resist pattern with the same 失效
    光刻用洗涤剂及其形成抗蚀剂图案的方法

    公开(公告)号：US08367312B2

    公开(公告)日：2013-02-05

    申请号：US12087545

    申请日：2006-12-08

    申请人： Yoshihiro Sawada ,  Kazumasa Wakiya ,  Jun Koshiyama ,  Hidekazu Tajima ,  Atsushi Miyamoto ,  Tomoya Kumagai ,  Atsushi Sawano

    发明人： Yoshihiro Sawada ,  Kazumasa Wakiya ,  Jun Koshiyama ,  Hidekazu Tajima ,  Atsushi Miyamoto ,  Tomoya Kumagai ,  Atsushi Sawano

    IPC分类号： C11D7/32 ,  C11D1/75

    CPC分类号： G03F7/322

    摘要： Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.

    摘要翻译： 含有表面活性剂作为活性成分的常规的光刻用洗涤剂应具有降低的表面活性剂浓度，因为增加的表面活性剂浓度导致光致抗蚀剂组合物的树脂组分的溶解，并因此导致抗蚀剂图案的尺寸变化。 然而，常规洗涤剂具有这样的缺点：这种低浓度不可避免地降低了抑制图案下落和缺陷发生的能力。 提供了一种用于光刻的洗涤剂，其是含有（A）至少一种选自含氮阳离子表面活性剂和含氮两性表面活性剂中的成分的水溶液和（B）阴离子表面活性剂。 这种洗涤剂即使在低浓度时也保持低的表面张力。 有效抑制图形下降和缺陷发生。 它也可以抑制抗蚀剂图案的波动。

    Resist surface modifying liquid, and method for formation of resist pattern using the same
    9.
    发明申请
    Resist surface modifying liquid, and method for formation of resist pattern using the same 有权
    抗表面改性液体，以及使用其形成抗蚀剂图案的方法

    公开(公告)号：US20100129758A1

    公开(公告)日：2010-05-27

    申请号：US12591585

    申请日：2009-11-24

    申请人： Satoshi Maemori ,  Tomoya Kumagai

    发明人： Satoshi Maemori ,  Tomoya Kumagai

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/38 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/2041

    摘要： Provided are: a resist surface modifying liquid which is used as a surface treatment liquid of a resist film prior to a post exposure baking (PEB) step, and which can inhibit occurrence of defects of the resist film by reducing water repellency; and a method for forming a resist pattern using the same. A resist surface modifying liquid which is used as a surface treatment liquid prior to a post exposure baking (PEB) step of a resist film, the resist surface modifying liquid containing an acidic compound, and at least one of an alcohol-based solvent represented by a certain general formula and an ether-based solvent represented by a certain general formula.

    摘要翻译： 提供：在曝光后烘烤（PEB）步骤之前用作抗蚀剂膜的表面处理液的抗蚀剂表面改性液体，并且可以通过降低拒水性来抑制抗蚀剂膜的缺陷的发生; 以及使用其形成抗蚀剂图案的方法。 一种抗蚀剂表面改性液体，其在抗蚀剂膜的后曝光烘烤（PEB）步骤之前用作表面处理液，所述抗蚀剂表面改性液体含有酸性化合物，以及至少一种由 一定的通式和由一种通式表示的醚系溶剂。