公开(公告)号：US20140246675A1

公开(公告)日：2014-09-04

申请号：US14347251

申请日：2012-09-20

Applicant: Toppan Printing CO., Ltd.

Inventor： Chihiro Imamura ,  Manabu Ito

IPC: H01L27/12 ,  H01L33/42

CPC classification number: H01L27/127 ,  G02F1/1362 ,  G02F1/136286 ,  G02F2001/136295 ,  G02F2202/107 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/7869 ,  H01L33/42

Abstract: Since the gate electrode (1) and the capacitor electrode (2) are made into a double layer structure, the first layers (1a, 2a) in contact with the substrate (0) are made of ITO, and the second layers (1b, 2b) in contact with the gate insulating layer (3) are made of an metallic oxide layer, it becomes possible to form the gate electrode (1) and the capacitor electrode (2) having high optical transparency and high conductivity. Therefore, it becomes possible to improve the optical transparency of a thin film transistor and to improve the display performance of an image displaying apparatus for which the thin film transistor is used by using the above-described gate electrode (1) and the above-described capacitor electrode (2).

Abstract translation: 由于栅电极（1）和电容器电极（2）制成双层结构，与ITO（基片）接触的第一层（1a，2a）由ITO制成，第二层（1b， 与栅极绝缘层（3）接触的电极（2b）由金属氧化物层形成，可以形成具有高透光性和高导电性的栅电极（1）和电容器电极（2）。 因此，可以提高薄膜晶体管的光学透明度，并且通过使用上述的栅电极（1）和上述的方法来提高使用薄膜晶体管的图像显示装置的显示性能 电容电极（2）。

公开(公告)号：US09589997B2

公开(公告)日：2017-03-07

申请号：US14347251

申请日：2012-09-20

Applicant: Toppan Printing Co., Ltd.

Inventor： Chihiro Imamura ,  Manabu Ito

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1362 ,  H01L33/42

CPC classification number: H01L27/127 ,  G02F1/1362 ,  G02F1/136286 ,  G02F2001/136295 ,  G02F2202/107 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/7869 ,  H01L33/42

Abstract: Since the gate electrode (1) and the capacitor electrode (2) are made into a double layer structure, the first layers (1a, 2a) in contact with the substrate (0) are made of ITO, and the second layers (1b, 2b) in contact with the gate insulating layer (3) are made of an metallic oxide layer, it becomes possible to form the gate electrode (1) and the capacitor electrode (2) having high optical transparency and high conductivity. Therefore, it becomes possible to improve the optical transparency of a thin film transistor and to improve the display performance of an image displaying apparatus for which the thin film transistor is used by using the above-described gate electrode (1) and the above-described capacitor electrode (2).

Abstract translation: 由于栅电极（1）和电容器电极（2）制成双层结构，与ITO（基片）接触的第一层（1a，2a）由ITO制成，第二层（1b， 与栅极绝缘层（3）接触的电极（2b）由金属氧化物层形成，可以形成具有高透光性和高导电性的栅电极（1）和电容器电极（2）。 因此，可以提高薄膜晶体管的光学透明度，并且通过使用上述的栅电极（1）和上述的方法来提高使用薄膜晶体管的图像显示装置的显示性能 电容电极（2）。

公开(公告)号：US20130056738A1

公开(公告)日：2013-03-07

申请号：US13629075

申请日：2012-09-27

Applicant: Toppan Printing Co., Ltd.

Inventor： Noriaki Ikeda ,  Chihiro Imamura ,  Manabu Ito

IPC: H01L33/08

CPC classification number: H01L27/1225 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/66765

Abstract: A method for manufacturing a thin film transistor includes a first process of forming a gate electrode on a substrate; a second process of forming a gate insulation film so as to cover the gate electrode; a third process of forming a source electrode and a drain electrode on the gate insulation film; a fourth process of forming a semiconductor layer connected to the source electrode and the drain electrode; a fifth process of forming a protection film so as to overlap a portion of the source electrode and the drain electrode immediately above the semiconductor layer; and a sixth process of patterning the semiconductor layer using the protection film as a mask.

Abstract translation: 制造薄膜晶体管的方法包括：在基板上形成栅电极的第一工序; 形成栅极绝缘膜以覆盖栅电极的第二工序; 在栅极绝缘膜上形成源电极和漏电极的第三工序; 形成连接到源电极和漏电极的半导体层的第四工序; 形成保护膜以使与半导体层正上方的源电极和漏电极的一部分重叠的第五工序; 以及使用保护膜作为掩模来图案化半导体层的第六工艺。