公开(公告)号：US20220011662A1

公开(公告)日：2022-01-13

申请号：US17292409

申请日：2019-11-01

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Toru KOMIZO ,  Norihito FUKUGAMI ,  Genta WATANABE ,  Eisuke NARITA

IPC: G03F1/24 ,  G02B5/08 ,  G03F1/54

Abstract: There is provided a reflective photomask blank and a reflective photomask having good irradiation resistance and capable of obtaining good transfer performance. A reflective photomask blank (10) contains a reflective layer (2) reflecting incident light and an absorption layer (4) absorbing incident light, which are formed in this order on one surface side of a substrate (1). The absorption layer (4) contains a first material selected from the group consisting of tin, indium, and tellurium and a second material containing one or two or more kinds of materials selected from the group consisting of transition metals, bismuth (Bi), and silicon (Si) at least in the outermost layer. The content of the second material is more than 20 at and less than 50 at % in the same laver.

公开(公告)号：US20160178997A1

公开(公告)日：2016-06-23

申请号：US15057548

申请日：2016-03-01

Applicant: Toppan Printing Co., Ltd.

Inventor： Genta WATANABE ,  Tomohiro IMOTO ,  Norihito FUKUGAMI

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective photomask includes: a substrate; a multilayer reflection film formed on the substrate and reflecting exposure light including light with a wavelength of about 5 nm to 15 nm for lithography; an absorption film formed on the multilayer reflection film and absorbing the exposure light, and formed therein with a circuit pattern or a circuit pattern forming region where the circuit pattern is formed; a shading region formed by removing part of the multilayer reflection film and the absorption film on the substrate, on an outer peripheral side of the circuit pattern or the circuit pattern forming region to shade part of the exposure light reflected by the multilayer reflection film; and a plurality of projections formed at a pitch of about 3000 nm or less on part of a surface of the substrate exposed in the shading region, and suppressing reflection of out-of-band light with a wavelength of about 140 nm to 800 nm included in the exposure light and incident on the shading region.

Abstract translation: 反射型光掩模包括：基板; 形成在基板上的多层反射膜，反射包含波长约5nm至15nm的光的曝光光用于光刻; 形成在多层反射膜上并吸收曝光光的吸收膜，并在其中形成电路图形或形成电路图案的电路图案形成区域; 通过在电路图案或电路图案形成区域的外周侧上除去基板上的多层反射膜和吸收膜的一部分而形成的阴影区域，以遮蔽由多层反射膜反射的曝光光的一部分; 以及在遮光区域中露出的基板的一部分表面上以约3000nm以下的间距形成的多个突起，抑制波长为140nm〜800nm左右的带外光的反射 在曝光灯中并入阴影区域。