公开(公告)号：US20220011662A1

公开(公告)日：2022-01-13

申请号：US17292409

申请日：2019-11-01

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Toru KOMIZO ,  Norihito FUKUGAMI ,  Genta WATANABE ,  Eisuke NARITA

IPC: G03F1/24 ,  G02B5/08 ,  G03F1/54

Abstract: There is provided a reflective photomask blank and a reflective photomask having good irradiation resistance and capable of obtaining good transfer performance. A reflective photomask blank (10) contains a reflective layer (2) reflecting incident light and an absorption layer (4) absorbing incident light, which are formed in this order on one surface side of a substrate (1). The absorption layer (4) contains a first material selected from the group consisting of tin, indium, and tellurium and a second material containing one or two or more kinds of materials selected from the group consisting of transition metals, bismuth (Bi), and silicon (Si) at least in the outermost layer. The content of the second material is more than 20 at and less than 50 at % in the same laver.

公开(公告)号：US20170306475A1

公开(公告)日：2017-10-26

申请号：US15138960

申请日：2016-04-26

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Tomohiro IMOTO ,  Norihito FUKUGAMI

IPC: C23C16/04 ,  C23C14/04

CPC classification number: G03F1/24 ,  C23C14/042 ,  C23C16/042 ,  C23C28/00

Abstract: There are provided a reflective mask and a reflective mask blank reducing reflection of out-of-band light and a manufacturing method therefor. A light shielding frame is formed on a mask region corresponding to a multiply exposed boundary region between a chip and a semiconductor substrate. The frame is provided with an antireflective layer causing surface reflection in antiphase to out-of-band light reflected from the surfaces of a rear-surface conductive film and the substrate to provide a reflective mask reducing reflection of out-of-band light. The antireflective layer of the present disclosure has an electrical conductivity of 1×104/mΩ or greater to minimize charging occurring in a pattern region in observing the region using an electron microscope.

公开(公告)号：US20200159106A1

公开(公告)日：2020-05-21

申请号：US16626290

申请日：2018-06-29

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Norihito FUKUGAMI ,  Toru KOMIZO

IPC: G03F1/24 ,  H01L21/033 ,  G03F1/54

Abstract: A reflective photomask blank (10) of a first aspect includes a substrate (1); a reflective layer (2) formed on the substrate (1); and a light absorbing layer (4) formed on the reflective layer (2). The light absorbing layer (4) includes a tin oxide film with an atomic ratio (O/Sn) of oxygen (O) to tin (Sn) being more than 1.50 and equal to or less than 2.0, and with a film thickness of 25 nm or more and 45 nm or less. Consequently, the shadowing effect of a reflective photomask for pattern transfer using extreme ultraviolet light as a light source is suppressed or reduced to improve the performance of transfer to a semiconductor substrate, and further, the cleaning resistance of the light absorbing layer is improved.

公开(公告)号：US20200218143A1

公开(公告)日：2020-07-09

申请号：US16625652

申请日：2018-06-29

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Toru KOMIZO ,  Norihito FUKUGAMI

IPC: G03F1/24 ,  G03F1/58

Abstract: A reflective photomask blank (10) of a first aspect includes a substrate (1); a reflective layer (2) formed on the substrate (1); and a light absorbing layer (4) formed on the reflective layer (2) and including a tin oxide film with a film thickness of 17 nm or more and less than 25.0 nm. Consequently, the shadowing effect of a reflective photomask for pattern transfer using extreme ultraviolet light as a light source is suppressed or reduced to improve the performance of transfer to a semiconductor substrate, and further, pattern collapse due to cleaning of the reflective photomask is suppressed.

公开(公告)号：US20170269468A1

公开(公告)日：2017-09-21

申请号：US15072164

申请日：2016-03-16

Applicant: Toppan Printing Co., Ltd.

Inventor： Shinpei KONDO ,  Norihito FUKUGAMI

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask reducing reflection of out-of-band light. The reflective mask includes a light shielding frame formed in a mask region corresponding to a boundary region of a chip on a semiconductor substrate multiply exposed. The substrate of the light shielding frame includes a layer having a different refractive index or includes pores to change the path of incident out-of-band light to thereby suppress the out-of-band light from being reflected off the conductive film. The substrate also includes a layer having a different refractive index relative to out-of-band light reflected off the conductive layer. With the reflective mask of this configuration, influence on the wiring pattern dimension can be reduced and productivity of the semiconductors can be improved.

公开(公告)号：US20160178997A1

公开(公告)日：2016-06-23

申请号：US15057548

申请日：2016-03-01

Applicant: Toppan Printing Co., Ltd.

Inventor： Genta WATANABE ,  Tomohiro IMOTO ,  Norihito FUKUGAMI

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective photomask includes: a substrate; a multilayer reflection film formed on the substrate and reflecting exposure light including light with a wavelength of about 5 nm to 15 nm for lithography; an absorption film formed on the multilayer reflection film and absorbing the exposure light, and formed therein with a circuit pattern or a circuit pattern forming region where the circuit pattern is formed; a shading region formed by removing part of the multilayer reflection film and the absorption film on the substrate, on an outer peripheral side of the circuit pattern or the circuit pattern forming region to shade part of the exposure light reflected by the multilayer reflection film; and a plurality of projections formed at a pitch of about 3000 nm or less on part of a surface of the substrate exposed in the shading region, and suppressing reflection of out-of-band light with a wavelength of about 140 nm to 800 nm included in the exposure light and incident on the shading region.

Abstract translation: 反射型光掩模包括：基板; 形成在基板上的多层反射膜，反射包含波长约5nm至15nm的光的曝光光用于光刻; 形成在多层反射膜上并吸收曝光光的吸收膜，并在其中形成电路图形或形成电路图案的电路图案形成区域; 通过在电路图案或电路图案形成区域的外周侧上除去基板上的多层反射膜和吸收膜的一部分而形成的阴影区域，以遮蔽由多层反射膜反射的曝光光的一部分; 以及在遮光区域中露出的基板的一部分表面上以约3000nm以下的间距形成的多个突起，抑制波长为140nm〜800nm左右的带外光的反射 在曝光灯中并入阴影区域。