公开(公告)号：US20040041955A1

公开(公告)日：2004-03-04

申请号：US10421776

申请日：2003-04-24

Applicant: Toppoly Optoelectronics Corp.

Inventor： Hsin-Ming Chen

IPC: G02F001/136

CPC classification number: G02F1/13454

Abstract: A method for manufacturing a liquid crystal display including a pixel portion having a pixel TFT as well as a drive circuit portion having a N-type TFT and a P-type TFT is disclosed. Firstly, an un-doped silicon layer, an N-type silicon layer and a metal layer are sequentially formed over a substrate; then, the metal layer and the N-type silicon layer are patterned to define source and drain electrodes for the N-type TFT, source and drain electrodes for the pixel TFT and a bottom electrode of a storage capacitor; thereafter, a gate oxide layer and a gate metal layer are sequentially formed on the overall surface; subsequently, the gate metal layer and the gate oxide layer are patterned to form a gate electrode for the N-type TFT, a gate electrode for the P-type TFT and a power electrode as well as a gate electrode for the pixel TFT and the storage capacitor; afterwards, a first photo resist pattern which bares a predetermined region for the P-type TFT is formed on the surface over the substrate, and then p-type impurities are implanted to form source and drain electrodes for the P-type TFT; subsequently, after the first photo resist pattern is removed, an annealing treatment is carried out to activate the impurities; and finally, a passivation layer of photosensitive resin is formed and patterned to form contact holes; an ITO layer is then formed and patterned to form connections of the N-type TFT, the P-type TFT, the pixel TFT and the storage capacitor.

Abstract translation: 公开了一种制造液晶显示器的方法，该液晶显示器包括具有像素TFT的像素部分以及具有N型TFT和P型TFT的驱动电路部分。 首先，在衬底上依次形成未掺杂硅层，N型硅层和金属层; 然后，对金属层和N型硅层进行图案化，以限定用于像素TFT的N型TFT，源极和漏极以及存储电容器的底部电极的源极和漏极; 此后，在整个表面上依次形成栅极氧化物层和栅极金属层; 随后，栅极金属层和栅极氧化物层被图案化以形成用于N型TFT的栅电极，用于P型TFT的栅电极和功率电极以及用于像素TFT的栅电极和 存储电容器; 之后，在基板上的表面上形成有用于P型TFT的预定区域的第一光致抗蚀剂图案，然后注入p型杂质以形成用于P型TFT的源极和漏极; 随后，在除去第一光致抗蚀剂图案之后，进行退火处理以激活杂质; 最后，形成感光树脂的钝化层并图案化以形成接触孔; 然后形成ITO层并构图以形成N型TFT，P型TFT，像素TFT和存储电容器的连接。

公开(公告)号：US20040041954A1

公开(公告)日：2004-03-04

申请号：US10413309

申请日：2003-04-15

Applicant: Toppoly Optoelectronics Corp.

Inventor： Hsin-Ming Chen

IPC: G02F001/136

CPC classification number: G02F1/13454 ,  G02F1/136213

Abstract: A method of forming a liquid crystal display device with a pixel TFT, a bottom electrode of pixel capacitor CL, and a storage capacitor Cs in a pixel region, and an n-type TFT and a p-type TFT in a driving circuit region is disclosed. Firstly, a transparent conductive oxide layer, a metal layer and an n-type heavy doped silicon layer are sequentially formed on a glass substrate. Thereafter, a patterning step is performed to define some predefined regions for above devices. After an active layer and a gate oxide layer are formed in order on all patterned surfaces, another patterning step is done to form a first, a second, and a third preserved region, respectively, for a LDD region of the n type TFT, source/drain regions for the p type TFT and a LDD region for pixel TFT and Cs. Afterward, gate electrodes are formed for aforementioned TFT and an upper electrode for Cs. Subsequently, a blanket nLDD implant is performed. Thereafter, a p type source/drain implant is carried out using a photoresist pattern as a mask. After removing the photoresist pattern, a passivation layer is formed on all areas. Next an annealing is performed to active the implant impurities. Another patterning process is then performed to form contact by patterning the passivation layer and form the bottom electrode of CL by further patterning the n-type heavy doped silicon layer, and the metal layer.

公开(公告)号：US20040076742A1

公开(公告)日：2004-04-22

申请号：US10409453

申请日：2003-04-09

Applicant: Toppoly Optoelectronics Corp.

Inventor： Hsin-Ming Chen

IPC: B05D005/12

CPC classification number: G02F1/13454 ,  G02F1/133553 ,  G02F1/136213

Abstract: A method of forming a liquid crystal display device with a pixel TFT, a bottom electrode of pixel capacitor CL, and a storage capacitor Cs in a pixel region, and an n-type TFT and a p-type TFT in a driving circuit region is disclosed. Firstly, a metal layer and an n-type silicon layer are formed on a transparent substrate. Thereafter, a patterning step is performed to define some predefined regions for above devices. After an active layer and a gate oxide layer are formed in order on all patterned surfaces, another patterning step is done to form a first, a second, and a third preserved region, respectively, for a LDD region of the n type TFT, source/drain regions for the p type TFT and a LDD region for pixel TFT and Cs. Thereafter, a photosensitive layer is deposited and patterned to form a reflective bumps region. A metal layer is formed and patterned to form a cover over the reflective bumps region and gate electrodes for aforementioned TFT as well as an upper electrode for Cs. Subsequently, a blanket nLDD implant is performed. Thereafter, a p type source/drain implant is carried out using a photoresist pattern as a mask. After removing the photoresist pattern, a passivation layer is formed on all areas. Next an annealing is performed to active the implant impurities. Another patterning process is then performed to expose the metal reflective layer over the bumps region and to form contact by patterning the passivation layer.

Abstract translation: 在像素区域中形成具有像素TFT，像素电容器CL的底电极和存储电容器Cs的液晶显示装置以及驱动电路区域中的n型TFT和p型TFT的方法是 披露 首先，在透明基板上形成金属层和n型硅层。 此后，执行图案化步骤以限定上述设备的一些预定区域。 在所有图案化表面上依次形成有源层和栅极氧化物层之后，进行另一图案化步骤以形成用于n型TFT的LDD区域的第一，第二和第三保留区域 /漏极区域和用于像素TFT和Cs的LDD区域。 此后，将感光层沉积并图案化以形成反射凸起区域。 形成金属层并图案化以在反射凸起区域上形成覆盖物，并在上述TFT上形成栅电极以及用于Cs的上电极。 随后，进行覆盖的nLDD植入。 此后，使用光致抗蚀剂图案作为掩模进行p型源极/漏极注入。 在去除光致抗蚀剂图案之后，在所有区域上形成钝化层。 接下来进行退火以使植入物的杂质起作用。 然后执行另一个图案化工艺以将凸起区域上的金属反射层暴露出来，并通过图案化钝化层形成接触。

公开(公告)号：US20030214472A1

公开(公告)日：2003-11-20

申请号：US10235726

申请日：2002-09-06

Applicant: TOPPOLY OPTOELECTRONICS CORP.

Inventor： Hsin-Ming Chen

IPC: G09G003/36

CPC classification number: G02F1/136213 ,  G02F1/133555 ,  G02F1/13624 ,  G09G3/3648 ,  G09G2300/0443 ,  G09G2300/0456 ,  G09G2330/08

Abstract: A scan line is used to control two thin film transistors and a video data line is used to transmit video signal to pixel capacitors and maintenance capacitors. When the thin film transistors are selected by the selection signal, the video signal stored therein charges the pixel capacitors and maintenance capacitors. When the selection signal is removed, the charge in the pixel capacitors is preserved until the next repetition when that scan line is again selected by a selection signal and new voltages are stored therein. Thus a picture is displayed on the matrix display by the charges stored in the pixel capacitors.

Abstract translation: 扫描线用于控制两个薄膜晶体管，并且使用视频数据线将视频信号传输到像素电容器和维护电容器。 当通过选择信号选择薄膜晶体管时，其中存储的视频信号为像素电容器和维护电容器充电。 当选择信号被去除时，像素电容器中的电荷被保留直到当通过选择信号再次选择该扫描线并且存储新的电压的下一个重复时为止。 因此，通过存储在像素电容器中的电荷在矩阵显示器上显示图像。