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公开(公告)号:US06605312B2
公开(公告)日:2003-08-12
申请号:US09962212
申请日:2001-09-26
申请人: Torsten Winkler , Ralf Blüthner , Klaus Goedicke , Michael Junghähnel , Hans Buchberger , Manfred Müller , Arno Hebgen , Hans-Hermann Schneider
发明人: Torsten Winkler , Ralf Blüthner , Klaus Goedicke , Michael Junghähnel , Hans Buchberger , Manfred Müller , Arno Hebgen , Hans-Hermann Schneider
IPC分类号: B05D100
CPC分类号: C23C14/35 , C23C16/515
摘要: Production of a thin-film system containing at least one ultra-thin film, preferentially in the film thickness range from 1 to 10 nm, which is deposited by plasma-aided chemical or physical vapor-phase deposition using magnetron discharges. The method is characterized in that in the course of deposition of the ultra-thin film the power output is introduced into the plasma in the form of a controlled number of power pulses and that the average power output during the pulse-on time is set higher by a factor of at least 3 than the averaged power output over the entire coating time during deposition of the ultra-thin film.
摘要翻译: 生产含有至少一种超薄膜的薄膜系统,优选在1至10nm的膜厚度范围内,其通过使用磁控管放电的等离子体辅助化学或物理气相沉积来沉积。 该方法的特征在于,在沉积超薄膜的过程中,功率输出以受控数量的功率脉冲的形式被引入到等离子体中,并且将脉冲接通时间期间的平均功率输出设置得更高 比在超薄膜沉积期间的整个涂布时间的平均功率输出至少3倍。