公开(公告)号：US5286669A

公开(公告)日：1994-02-15

申请号：US887662

申请日：1992-05-26

申请人： Toru Maeda ,  Patsuzo Kawaguchi

发明人： Toru Maeda ,  Patsuzo Kawaguchi

IPC分类号： H01L21/8234 ,  H01L27/148 ,  H01L21/339

CPC分类号： H01L27/148 ,  H01L21/823406

摘要： The invention relates to a solid-state imaging device in which a light-sensitive element region and a charge transfer region are separately formed on a semiconductor substrate of a first conductivity type by implanting an impurity of a second conductivity type into the substrate. A channel region is formed between these two regions by implanting an impurity of the first conductivity type into the substrate. Next, charge transfer electrodes made of a light-proof material are formed on the light-sensitive element region and the charge transfer region, with insulating films thereunder.An alloy of a high-melting-point metal and silicon is used in the construction of the charge transfer electrodes, and this alloy is subjected to high-temperature processing in an atmosphere of O.sub.2.

摘要翻译： 本发明涉及一种固态成像装置，其中通过将第二导电类型的杂质注入衬底中，在第一导电类型的半导体衬底上分别形成光敏元件区域和电荷转移区域。 通过将第一导电类型的杂质注入衬底中，在这两个区域之间形成沟道区。 接下来，在感光元件区域和电荷转移区域上形成由耐光材料制成的电荷转移电极，其下具有绝缘膜。 在电荷转移电极的构造中使用高熔点金属和硅的合金，并且将该合金在O 2气氛中进行高温处理。