公开(公告)号：US20100243426A1

公开(公告)日：2010-09-30

申请号：US12675361

申请日：2008-08-25

申请人： Toru Maekawa ,  Takahiro Fukuda ,  Nami Fukuda ,  Takashi Hasumura ,  Koji Ishii ,  Nyrki Rantonen ,  Yoshikata Nakajima ,  Tatsuro Hanajiri

发明人： Toru Maekawa ,  Takahiro Fukuda ,  Nami Fukuda ,  Takashi Hasumura ,  Koji Ishii ,  Nyrki Rantonen ,  Yoshikata Nakajima ,  Tatsuro Hanajiri

IPC分类号： C01B31/02

CPC分类号： B82Y40/00 ,  B01J3/008 ,  B01J19/121 ,  B01J19/123 ,  B01J19/127 ,  B82Y30/00 ,  C01B32/05 ,  C01B32/15 ,  Y02P20/544

摘要： There is provided a method for decomposing a carbon-containing compound including: changing the condition of the carbon-containing compound into a subcritical fluid, a critical fluid or a supercritical fluid state; irradiating the carbon-containing compound with light to decompose, wherein the carbon-containing compound is an organic compound. According to an aspect of the present invention, a carbon nano/microstructure such as a nano/microparticle is obtained at a temperature lower than those used conventionally.

摘要翻译： 提供了一种分解含碳化合物的方法，包括：将含碳化合物的状态改变为亚临界流体，临界流体或超临界流体状态; 用光照射含碳化合物分解，其中含碳化合物是有机化合物。 根据本发明的一个方面，在比常规使用的温度低的温度下获得纳米/微粒等碳纳米/微结构。

公开(公告)号：US06734501B2

公开(公告)日：2004-05-11

申请号：US10058221

申请日：2002-01-29

申请人： Takuo Sugano ,  Toru Toyabe ,  Tatsuro Hanajiri ,  Akira Saito ,  Yoshiro Akagi

发明人： Takuo Sugano ,  Toru Toyabe ,  Tatsuro Hanajiri ,  Akira Saito ,  Yoshiro Akagi

IPC分类号： H01L310392

CPC分类号： H01L29/78696 ,  H01L27/1203 ,  H01L29/458 ,  H01L29/66621 ,  H01L29/66772

摘要： A fully inverted type SOI-MOSFET has a channel region 18 constructed of a portion that belongs to a top silicon layer 13 and is located just under a gate electrode 15 and a source region 16 and a drain region 17, which belong to the top silicon layer 13 and are located adjacent to this channel region 18. The channel region 18 is inverted throughout the entire thickness during operation. The source region 16 has a source resistance RS, which satisfies a relation that (1/gm)>RS with respect to the mutual conductance gm of the channel region 18 itself. According to this fully inverted type SOI-MOSFET, the effective mutual conductance (Gm) can be increased.

摘要翻译： 全反相型SOI-MOSFET具有由属于顶部硅层13的部分构成的沟道区18，该沟道区18位于栅电极15的下方，源极区16和漏极区17属于顶部硅 层13并且位于该通道区域18附近。在操作期间，通道区域18在整个厚度上反转。 源极区域16具有源极电阻RS，其满足关于通道区域18本身的互导体gm的关系（1 / gm）> RS。 根据这种完全反转型的SOI-MOSFET，可以提高有效的互导（Gm）。