公开(公告)号：US20050006649A1

公开(公告)日：2005-01-13

申请号：US10824442

申请日：2004-04-15

申请人： Takayuki Iwasaki ,  Tsutomu Yatsuo ,  Hidekatsu Onose ,  Toshiyuki Oono

发明人： Takayuki Iwasaki ,  Tsutomu Yatsuo ,  Hidekatsu Onose ,  Toshiyuki Oono

IPC分类号： H01L29/772 ,  H02M7/00 ,  H01L31/0312

CPC分类号： H02M7/003 ,  H01L29/7722

摘要： A static induction transistor includes a semiconductor substrate with an energy band gap greater than that of silicon, and the semiconductor substrate has a first gate region to which a gate electrode is connected; and a second gate region positioned within a first semiconductor region which becomes a drain region, and the first gate region is in contact with a second semiconductor region which becomes a source region. According to this construction, the OFF characteristics of the static induction transistor are improved.

摘要翻译： 静电感应晶体管包括具有比硅的能带隙大的能带隙的半导体衬底，并且半导体衬底具有连接有栅电极的第一栅极区域; 以及位于成为漏极区域的第一半导体区域内的第二栅极区域，并且第一栅极区域与成为源极区域的第二半导体区域接触。 根据该结构，能够提高静电感应晶体管的OFF特性。

公开(公告)号：US06384428B1

公开(公告)日：2002-05-07

申请号：US09646305

申请日：2000-09-15

申请人： Toshiyuki Oono ,  Takayuki Iwasaki ,  Tsutomu Yatsuo

发明人： Toshiyuki Oono ,  Takayuki Iwasaki ,  Tsutomu Yatsuo

IPC分类号： H01L310312

CPC分类号： H01L29/7395 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： The present semiconductor switching device comprises a silicon carbide single crystal of hexagonal symmetry having a first conductive type and a semiconductor region of a second conductive type opposite to the first conductive type and locating in the silicon carbide single crystal. The silicon carbide single crystal of the first conductive type and the semiconductor region of the seconductive type form a pn junction. The pn junction interface has an interface extended in the depth direction from the surface of the silicon carbide single crystal, and the interface includes a crystal plane in parallel to the orientation of the silicon carbide single crystal or approximately in parallel thereto, thereby reducing the leak current.

摘要翻译： 本半导体开关器件包括具有第一导电类型的六边形对称的碳化硅单晶和与第一导电类型相反并且位于碳化硅单晶中的第二导电类型的半导体区域。 第一导电类型的碳化硅单晶和第二导电类型的半导体区域形成pn结。 pn结界面具有从碳化硅单晶的表面沿深度方向延伸的界面，并且界面包括平行于碳化硅单晶的<1120>取向的晶体平面，或者大致与其平行。 减少漏电流。