摘要:
To eliminate the unevenness of the remaining film thickness of the wafers, and increase the polishing efficiency, reduce the running cost and enhance the yield. A CMP apparatus 1 is equipped with a polishing recipe preparing means 3 that prepares polishing conditions so that the polishing conditions such as polishing speed, polishing pressure, abrasive and the like for the wafers become optimal, a remaining film thickness forecasting means 4 that forecasts the remaining film thickness of the wafer to be polished under the polishing conditions after polishing, a remaining film thickness measuring apparatus 4 that measures the remaining film thickness of the wafer after the polishing, and a computer 6 that controls the polishing conditions on the basis of the measurement results of the remaining film thickness. Further, the computer 6 includes a calculating unit 11 that calculate the difference between the measured value of the remaining film thickness and the forecasted value thereof, and a polishing condition correcting/changing unit 13 that corrects/changes the polishing conditions so that the calculated difference becomes minimal, and thereby, the correction/change of the polishing conditions is carried out in real time.
摘要:
To eliminate the unevenness of the film thickness of the wafers, and increase the polishing efficiency, reduce the running cost and enhance the production yield. A CMP apparatus 1 includes a film thickness measuring means 6 that measures the film thickness of the wafers before polishing, a polishing recipe preparing means 7 that prepares polishing conditions so that the polishing conditions such as polishing speed, polishing pressure, and the like for the wafers become optimal, a polishing time forecasting means that forecasts the polishing time of the wafer on the basis of the optimal polishing condition and the measured value, a polishing time measuring means that measures the actual polishing time of the wafer, and a computer 9 that controls the polishing condition on the basis of the measured value and the like of the polishing time. Further, the computer 9 includes a calculating unit 23 that calculate the difference between the measured value of the polishing time and the forecasted value thereof, and a polishing condition correcting/changing unit 24 that corrects/changes the polishing conditions so that the calculated difference becomes minimal, and thereby, the correction/change of the polishing conditions is carried out in real time.
摘要:
Coil is made to be disposed with gap opposed to the surface of wafer, and wafer stage is made to move in X and Y direction and R and θ direction. When supplying an alternating current to coil with the frequency swept by impedance analyzer, the magnetic field made to be induced in coil will operate on the conductive film of wafer. By changing a parameter (a frequency or an angle) influencing the skin effect of the conductive film and giving the parameter to coil, the state where a magnetic field is not made to penetrate relatively the film of wafer and the state where the magnetic field is made to penetrate relatively the film can be formed. From the variation of various values corresponding to the eddy current induced based on the change of state influenced by the skin effect of the conductive film, the film thickness of wafer can be measured with sufficient accuracy.
摘要:
A method and device for forecasting/detecting a polishing end point and for monitoring a real-time film thickness to suppress Joule heat loss due to the eddy current to the minimum, to precisely forecast/detect a polishing end point, to precisely calculate the remaining film thickness to be removed, and polishing rate. An inductor 36 in a sensor is arranged adjacent to a predetermined conductive film 28, and a magnetic flux change induced in the conductive film 28 by a magnetic flux formed by the inductor 36 is monitored, and by use of a magnetic flux change when a film thickness becomes corresponding to skin depth in which a film thickness in polishing is determined by the material of the predetermined conductive film 28 as a factor, a magnetic flux change part to forecast a polishing end point in the magnetic flux change process is detected, and a polishing end point is forecasted from the magnetic flux change part, and a polishing rate and a remaining film thickness amount to be removed are calculated on the spot.
摘要:
A method and device for forecasting and detecting a polishing endpoint and real time film thickness monitoring capable of suppressing to a minimum Joule heat loss due to an eddy current, and precisely forecasting and detecting the polishing endpoint, and precisely calculating a remaining film amount to be removed and a polishing rate. A high frequency inductor sensor is positioned close to the conductive film, and monitors a flux change induced in the conductive film. When a film thickness becomes a film thickness corresponding to a skin depth of the conductive film a method of calculating on the spot a polishing rate and a remaining film amount to be removed is provided.
摘要:
An object of the present invention is to provide a method of forecasting and detecting a polishing endpoint and the device thereof and a real time film thickness monitoring method and the device thereof capable of suppressing a Joule heat loss to the minimum due to an eddy current, and precisely forecasting and detecting the polishing endpoint, and moreover, precisely calculating a remaining film amount to be removed and a polishing rate and the like on the spot so as to be able to accurately evaluate whether the predetermined conductive film is appropriately removed.To achieve the above described object, the present invention brings an inductor in a high frequency inductor type sensor close to the predetermined conductive film, and monitors a flux change induced in the predetermined conductive film by the flux formed by the inductor 36, and based on a flux change when a film thickness during the polishing becomes a film thickness corresponding to a skin depth decided with the material of the predetermined conductive film as a factor, detects a film thickness reference point, and forecasts the polishing endpoint from this film thickness reference point, and provides a method of calculating on the spot a polishing rate and a remaining film amount to be removed.
摘要:
The present invention aims to provide a wafer polish monitoring method and device for detecting the end point of the polishing of a conductive film with high precision and accuracy by monitoring the variation of the film thickness of the conductive film without adverse influence of slurry or the like after the film thickness of the conductive film decreases to an extremely small film thickness defined by the skin depth. To achieve this objective, the present invention provides a wafer polish monitoring method by which a high-frequency transmission path is formed in a portion facing the conductive film on the surface of the wafer, the polishing removal state of the conductive film is evaluated based at least on the transmitted electromagnetic waves passing through the high-frequency transmission path or the reflected electromagnetic waves that are reflected without passing through the high-frequency transmission path, and the end point of the polishing removal and the point equivalent to the end point of the polishing removal are detected.
摘要:
A wafer polish monitoring method and device for detecting the end point of the polishing of a conductive film with high precision and accuracy by monitoring the variation of the film thickness of the conductive film without adverse influence of slurry or the like after the film thickness of the conductive film decreases to an extremely small film thickness defined by the skin depth. A high-frequency transmission path is formed in a portion facing the conductive film on the surface of the wafer, the polishing removal state of the conductive film is evaluated based at least on the transmitted electromagnetic waves passing through the high-frequency transmission path or the reflected electromagnetic waves that are reflected without passing through the high-frequency transmission path, and the end point of the polishing removal and the point equivalent to the end point of the polishing removal are detected.
摘要:
Coil is made to be disposed with gap opposed to the surface of wafer, and wafer stage is made to move in X and Y direction and R and θ direction. When supplying an alternating current to coil with the frequency swept by impedance analyzer, the magnetic field made to be induced in coil will operate on the conductive film of wafer. By changing a parameter (a frequency or an angle) influencing the skin effect of the conductive film and giving the parameter to coil, the state where a magnetic field is not made to penetrate relatively the film of wafer and the state where the magnetic field is made to penetrate relatively the film can be formed. From the variation of various values corresponding to the eddy current induced based on the change of state influenced by the skin effect of the conductive film, the film thickness of wafer can be measured with sufficient accuracy.
摘要:
[Problem to be Solved] To provide a method and device for forecasting/detecting a polishing end point and a method and device for monitoring a real-time film thickness to suppress Joule heat loss due to the eddy current to the minimum, to precisely forecast/detect an polishing end point, to precisely calculate the remaining film thickness to be removed, polishing rate and the like on the spot, and to precisely evaluate whether the predetermined conductive film is appropriately removed[Solution] In order to achieve the object, according to the present invention, there is provided a method wherein an inductor 36 in a high frequency inductor type sensor is arranged adjacent to a predetermined conductive film 28, and a magnetic flux change induced in the predetermined conductive film 28 by a magnetic flux formed of the inductor 36 is monitored, and by use of a magnetic flux change when a film thickness becomes corresponding to skin depth in which a film thickness in polishing is determined by the material of the predetermined conductive film 28 as a factor, a magnetic flux change part to forecast a polishing end point in the magnetic flux change process is detected, and an polishing end point is forecasted from the magnetic flux change part, and further a polishing rate and a remaining film thickness amount to be removed are calculated on the spot.